1 |
M. Stutzmann and J. Chevallier (Ed.), Hydrogen in Semiconductors: Bulk and Surface Properties (North-Holland, Amsterdam, 1991).
|
2 |
S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Spring-Verlag, Berlin, 1987).
|
3 |
J. Weber and A. Mesli (Ed.), Defects in Silicon: Hydrogen (Elsevier Science, 1999).
|
4 |
J. Weber, Hydrogen in Semiconductors: From Basic Physics to Technology, Phys. Stat. Sol. 5, 535 (2008).
DOI
|
5 |
C. G. Van de Walle, and J. Neugebauer, Hydrogen in Semiconductors, Ann. Rev. Mater. Res. 36, 179 (2006).
DOI
|
6 |
H. N. Waltenburg and J. T. Yates, Jr., Chem. Rev. 95, 1589 (1995).
DOI
|
7 |
K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov, and M. Katayama, Surf. Sci. Rep. 35, 1 (1999).
DOI
|
8 |
S. K. Jo, J. H. Kang, X.-M. Yang, J. M. White, J. G. Ekerdt, J. W. Keto, and J. Lee, Direct Absorption of Gas-Phase Atomic Hydrogen by Si(100): A Narrow Temperature Window, Phys. Rev. Lett. 85, 2144 (2000).
DOI
|
9 |
J. Y. Maeng, S. Kim, S. K. Jo, W. P. Fitts, and J. M. White, Absorption of Gas-Phase Atomic Hydrogen by Si(100): Effect of Surface Atomic Structures, Appl. Phys. Lett. 79, 36 (2001).
DOI
|
10 |
M. Jung and S. K. Jo, Hydrogen Absorption by Si(100): Enhancement and Suppression by HF Etching, J. Phys. Chem. C 115, 23463 (2011).
DOI
|
11 |
S. K. Jo, Preparation and Stability of Silyl Adlayers on 2x2-Reconstructred and Modified Si(100) Surfaces, J. Kor. Vac. Soc. 18, 15 (2009).
DOI
|
12 |
J. H. Kang, S. K. Jo, B. Gong, P. Parkinson, D. E. Brown, J. M. White, and J. G. Ekerdt, Amorphization of Single-Crystalline Silicon by Thermal-Energy Atomic Hydrogen, Appl. Phys. Lett. 75, 91 (1999).
DOI
|
13 |
A.W. R. Leitch, A. Alex, and J. Weber, Raman Spectroscopy of Hydrogen Molecules in Crystalline Silicon, Phys. Rev. Lett. 81, 421 (1998).
DOI
|
14 |
S. Pizzini, Point Defects in Semiconductors, Physical Chemistry of Semiconductor Materials and Processes (John Wiley & Sons, 2015) Chapter 2.
|
15 |
J. J. Boland, Hydrogen as a Probe of Semiconductor Surface Structure: The Ge(111)-c(2 X 8) Surface, Science, 255, 186 (1992).
DOI
|
16 |
J. Y. Maeng, J. Y. Lee, Y. E. Cho, S. Kim, and S. K. Jo, Surface Dihydrides on Ge(100): A Scanning Tunneling Microscopy Study, Appl. Phys. Lett. 19, 3555 (2002).
|
17 |
J. Y. Lee, S. J. Jung, J. Y. Maeng, Y. E. Cho, S. Kim, and S. K. Jo, Atomic-Scale Structural Evolution of Ge(100) Surfaces Etched by H and D, Appl. Phys. Lett. 84, 5028 (2004).
DOI
|
18 |
R. Pillarisetty, Academic and Industry Research Progress in Germanium Nanodevices, Nature 479, 324 (2011).
DOI
|
19 |
P. W. Loscutoff and S. F. Bent, Reactivity of the Germanium Surface: Chemical Passivation and Functionalization, Ann. Rev. Phys. Chem. 57, 467 (2006).
DOI
|
20 |
J. Weber, M. Hiller, and E. V. Lavrov, Hydrogen in Germanium, Mater. Sci. Semicond. Proc. 9, 564 (2006).
DOI
|
21 |
P. Ponath, K. Fredrickson, A. B. Posadas, Y. Ren, X. Wu, R. K. Vasudevan, M. B. Okatan, S. Jesse, T. Aoki, M. R. McCartney, D. J. Smith, S. V. Kalinin, K. Lai, and A. A. Demkov, Carrier Density Modulation in a Germanium Heterostructure by Ferroelectric Switching, Nature Comm. 6, 6067 (2015).
DOI
|
22 |
S. Banerjee, C. H. Patterson, and J. F. McGilp, Group V Adsorbate Structures on Vicinal Ge(001) Surface Determined from the Optical Spectrum, Appl. Phys. Lett. 110, 233903 (2017).
DOI
|
23 |
S. Hu, E. L. Lin, A. K. Hamze, A. Posadas, H. Wu, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, Zintl Layer Formation during Perovskite ALD on Ge(001), J. Chem. Phys. 146, 052817 (2017).
DOI
|
24 |
J.-H. Lee, E. K. Lee, W.-J. Joo, Y. Jang, B.-S. Kim, J. Y. Lim, S.-H. Choi, S. J. Ahn, J. R. Ahn, M.-H. Park, C.-W. Yang, B. L. Choi, S.- W. Hwang, and D. Whang, Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium, Science 344, 286 (2014).
DOI
|
25 |
M. Walker, M. S. Tedder, J. D. Palmer, J. J. Mudd, and C. f. McConville, Low Temperature Removal of Surface Oxides and Hydrocarbons form Ge(100) Using Atomic Hydrogen, Appl. Surf. Sci. 379, 1 (2016).
DOI
|
26 |
J. Y. Lee, J. Y. Maeng, A. Kim, Y. E. Cho, and S. Kim, Kinetics of ( ) Desorption from a Ge(100)-2x1:H(D) Surface Studied Using STM and TPD, J. Chem. Phys. 118, 1929 (2003).
DOI
|
27 |
M. Stavola, Hydrogen in Silicon and Germanium, The 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium; Nov. 10-14, 2008, Kona, Hawaii, USA) Proceedings, pp. 337-343.
|
28 |
P. Ponath, A. B. Posada, and A. A. Demkov, Ge(001) Surface Cleaning Methods for Device Integration, Appl. Phys. Rev. 4, 021308 (2017).
DOI
|
29 |
T. Nishimura, S. Kabuyanagi, W. Zhang, C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi, Atomically Flat Planarization of Ge(100), (110), and (111) Surfaces in Annealing, Appl. Phys. Express 7, 051301 (2014).
DOI
|
30 |
S. V. Sivaram, H. Y. Hui, M. de la Mata, J. Arbiol, and M. A. Filler, Surface Hydrogen Enables Subeutectic Vapor-Liquid-Solid Semiconductor Nanowire Growth, Nano Lett. 16, 6717 (2016).
DOI
|
31 |
S. K. Jo, B. Gong, G. Hess, J. M. White, and J. G. Ekerdt, Low-Temperature Si(100) Etching: Facile Abstraction of SiH3(a) by Thermal Hydrogen Atoms, Surf. Sci. Lett. 394, L162 (1997).
DOI
|
32 |
M. Budde, B. B. Nielsen, C. P. Cheney, N. H. Tolk, and L. C. Feldmann, Local Vibrational Modes of Isolated Hydrogen in Germanium, Phys. Rev. Lett. 85, 2965 (2000).
DOI
|
33 |
M. Stavola, Hydrogen in Silicon and Germanium, Proceedings of the 5th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium) (Nov. 10-14, 2008; Hawaii, USA) pp. 337-343.
|