• Title/Summary/Keyword: 1.8 GHz

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Frequency Characteristics of 2-Layer Spiral Planar Inductor (2층 나선형 박막 인덕터의 주파수 특성)

  • Kim, Jae-Wook;Ryu, Chang-Keun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.9
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    • pp.4101-4106
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    • 2011
  • In this study, we propose that the structures of 2-layer spiral planar inductors have a lower spiral coil and via increasing inductance in limited possession are and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The 2-layer spiral planar inductors have inductance of 3.2nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 8.2 at 2.5 GHz, SRF of 5.8 GHz. Otherwise, 1-layer spiral planar inductors have inductance of 1.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18 at 8 GHz, SRF of 19.2 GHz.

Frequency Characteristics of Octagonal Spiral Planar Inductor (팔각 나선형 박막 인덕터의 주파수 특성)

  • Kim, Jae-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.3
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    • pp.1284-1287
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    • 2012
  • In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

A 54-GHz Injection-Locked Frequency Divider Based on 0.13-㎛ RFCMOS Technology (0.13-㎛ RFCMOS 공정 기반 54-GHz 주입 동기 주파수 분주기)

  • Seo, Hyo-Gi;Yun, Jong-Won;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.5
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    • pp.522-527
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    • 2011
  • In this work, a 54 GHz divide-by-3 injection-locked frequency divider(ILFD) based on ring oscillator has been developed in a 0.13-${\mu}M$ Si RFCMOS technology for phase-locked loop(PLL) application. The free-running frequency is 18.92~19.31 GHz with tuning range of 0~1.8 V, consuming 70 mW with a 1.8 V supply voltage. At 0 dBm input power, the locking range is 1.02 GHz(54.82~55.84 GHz) and, with varactor tuning of 0~1.8 V, the total operating range is 2.4 GHz(54.82~57.17 GHz). The fabricated circuit size is 0.42 mm${\times}$0.6 mm including probing pads and 0.099 mm${\times}$0.056 mm for core area.

Design of CMOS LC VCO with Linearized Gain for 5.8GHz/5.2GHz/2.4GHz WLAN Applications (5.8GHz/5.2GHz/2.4GHz 무선 랜 응용을 위한 선형 이득 CMOS LC VCO의 설계)

  • Ahn Tae-Won;Moon Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.6 s.336
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    • pp.59-66
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    • 2005
  • CMOS LC VCO for tri-bind wireless LAN applications was designed in 1.8V 0.18$\mu$m CMOS process. PMOS transistors were chosen for VCO core to reduce flicker noise. The possible operation was verified for 5.8GHz band (5.725$\~$5.825GHz), 5.2GHz band (5.150$\~$5.325GHz), and 2.4GHz band (2.412$\~$2.484GHz) using the switchable L-C resonators. To linearize its frequency-voltage gain (Kvco), optimized multiple MOS varactor biasing technique was used for capacitance linearization and PLL stability improvement. VCO core consumed 2mA current and $570{\mu}m{\times}600{\mu}m$ die area. The phase noise was lower than -110dBc/Hz at 1MHz offset for tri-band frequencies.

Quad-Band RF CMOS Power Amplifier for Wireless Communications (무선 통신을 위한 Quad-band RF CMOS 전력증폭기)

  • Lee, Milim;Yang, Junhyuk;Park, Changkun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.7
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    • pp.807-815
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    • 2019
  • In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

Design of 2.4/5.8GHz Dual-Frequency CPW-Fed Planar Type Monopole Active Antennas (2.4/5.8GHz 이중 대역 코프래너 급전 평면형 모노폴 능동 안테나 설계)

  • Kim, Joon-Il;Chang, Jin-Woo;Lee, Won-Taek;Jee, Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.8
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    • pp.42-50
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    • 2007
  • This paper presents design methods for dual-frequency(2.4/5.8GHz) active receiving antennas. The proposed active receiving antennas are designed to interconnect the output port of a wideband antenna to the input port of an active device of High Electron Mobility Transistor directly and to receive RF signals of 2.4GHz and 5.2GHz simultaneously where the impedance matching conditions are optimized by adjusting the length of $1/20{\lambda}_0$(@5.8GHz) CPW transmission line in the planar antenna The bandwidth of implemented dual-frequency active receiving antennas is measured in the range of 2.0GHz to 3.1GHz and 5.25GHz to 5.9GHz. Gains are measured of 17.0dB at 2.4GHz and 15.0dB at 5.2GHz. The measured noise figure is 1.5dB at operating frequencies.

5.8 GHz Microwave Wireless Power Transmission System Development and Transmission-Efficiency Measurement (5.8 GHz 마이크로파 무선전력전송 시스템 개발 및 전송효율측정)

  • Lee, Seong Hun;Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.59-63
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    • 2014
  • Previous studies have selected wireless power transmission system using 2.45 GHz of ISM band, but the researches for 5.8 GHz microwave wireless power transmission have been relatively rare. The 5.8 GHz has some advantages compared with 2.45 GHz. Those are smaller antenna and smaller integrated system for RFIC. In this paper, the 5.8 GHz wireless power transmission system was developed and transmission efficiency was measured according to the distance. A transmitter sent the amplified microwaves through an antenna amplified by a power amplifier of 1W for 5.8 GHz, and a receiver was converted to DC from RF through a RF-DC Converter. In the 1W 5.8GHz wireless power transmission system, the converted currents and voltages were measured to evaluate transmission efficiency at each distance where LED lights up to 1m. The RF-DC Converter is designed and fabricated by impedance matching using full-wave rectifier circuit. The transmission-efficiency of the system shows from 1.05% at 0cm to 0.095% at 100cm by distance.

A 4.8-Gb/s QPSK Demodulator For 60-GHz WPAN (60GHz 대역 WPAN을 위한 4.8Gb/s QPSK 복조기)

  • Kim, Du-Ho;Choi, Woo-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.1
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    • pp.7-13
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    • 2011
  • A mixed-mode QPSK demodulator for 60-GHz wireless personal area network application is demonstrated. In this work, mixed-mode QPKS demodulation scheme achieving low power consumption and small area is employed. The prototype chip realized by 60-nm CMOS Logic process can demodulate up to 4.8-Gb/s QPSK signals at 4.8-GHz carrier frequency. At this carrier frequency, the demodulator core consumes 54 mW from 1.2-V power supply while the chip area is $150{\times}150{\mu}m^2$. Using the fabricated chip, transmission and demodulation of 1.7-GSymbol/s QPSK signal in 60-GHz link is demonstrated.

LTE Spectrum Policy: Focused on the OECD 12 Countries (이동통신 LTE 주파수 정책: 주요국 사례를 중심으로)

  • Jun, Soo-Yeon;Jeong, In-Jun
    • Journal of Digital Convergence
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    • v.12 no.8
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    • pp.1-18
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    • 2014
  • Recently, many of the mobile network operators or telcos are introducing the LTE service in order to effectively cope with an explosive increasing mobile traffics due to an expansion of the use of smart phones. The 1.8GHz, 2.6GHz, and 800MHz band classes are most widely used for LTE. In particular, the 1.8GHz band class is the most useful one in terms of the reusability of the existing (2G) network, global harmonization, bandwidth, eco-system of equipments and devices, and so on. In recent years, major countries in the world have allocated the 1.8GHz band spectrum in a wide bandwidth unit suitable for the upcoming LTE-Advanced service. This paper surveyed the 1.8GHz band spectrum allocation policies of the 12 OECD countries, including Republic of Korea. From the survey, we have found that they rebuilt or refarmed the existing holders' bands, recovered the public (i.e., military)-use bands, and allocated the bands in a wide bandwidth and in an equal or similar size.

A New Switchable Dual Mode Voltage Controlled Oscillator (새로운 구조의 스위치형 이중 모드 전압 제어 발진기)

  • Ryu, Jee-Youl;Deboma, Gilbert D.
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.869-872
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    • 2005
  • This paper presents a new switchable dual mode VCO(Voltage-Controlled Oscillator). The VCO is efficient in dual mode operation and has self-bias adjustment based on the operation frequencies of 2.4 GHz and 5 GHz. The switching is done using MOS transistors and tuning is done using MOS varactors. It is implemented using TSMC 0.18${\mu}$m CMOS technology. It is powered by 1.8V supply. The measured results showed that the overall tuning range is approximately 13% at 5 GHz and 8% at 2.4 GHz. The measured phase noise is approximately -102 dBc/Hz at 1 MHz offset for 5 GHz and -89 dBc/Hz at 600kHz offset for 2.4 GHz. The VCO showed tail currents of 2mA in 5GHz mode and 2.5mA in 2.4GHz mode from a 1.8 V supply, respectively.

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