• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1881-1886
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• 2010

Hydrothermal reaction of zinc(II) salts with 5-sulfoisophthalic acid monosodium salt ($NaO_3SC_6H_3$-1,3-(COOH)$_2$, $NaH_2$-SIP) and 1,10-phenanthroline (phen) led to two new compounds, [Zn(phen)$_3$$\cdot2H_2SIP\cdot4H_2O$ (1) and [Zn(phen)$_2(H_2O)_2]\cdot2H_2SIP\cdot2H_2O$ (2). They were characterized by element analysis, IR spectroscopy, thermalgravimetric analysis (TGA), X-ray powder diffraction (XRD), and single-crystal X-ray diffraction. Both compounds 1-2 represent the first example of Zn/phen/SIP system. The Zn (II) ion in 1 is six-coordinated by six nitrogen atoms from three phen molecules, and the $H_2SIP^-$ ligands engage in the formation of hydrogen bond. The Zn(II) ion in 2 is coordinated by four nitrogen atoms from two phen molecules and two oxygen atoms from two water molecules. Moreover, both 1 and 2 are assembled into 3D supramolecular architectures by hydrogen bonds (O-H$\ldots$O) and $\pi-\pi$ interactions. Solvent water molecules occupying voids of the compounds serve as receptors or donors of the extensive O-H$\ldots$O hydrogen bonds.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.226-232
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• 2002

We searched thermal stability of ${\alpha}-Fe_2O_3$ using red color filter for display. In the PDP(Plasma Display Panel), the color filter layer is lied normally between front glass and transparent dielectric materials, so it might be needed to study the reaction of ${\alpha}-Fe_2O_3$ and transparent dielectric materials. The transparent dielectric materials containing ZnO has good transparency. Red colorlayer of ${\alpha}-Fe_2O_3$ contacted with dielectric material layer containing ZnO is changed to colorlessness over 500$^{\circ}$C because ZnO defuse ${\alpha}-Fe_2O_3$, the dielectric materials without ZnO, however, maintain red color at the same condition. We suggest that a layer contacting with ${\alpha}-Fe_2O_3$ red color layer has to lie with transparent dielectric materials without ZnO, then the materials containing ZnO is coated over to get color of ${\alpha}-Fe_2O_3$ for red color filter

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.11a
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• pp.11-12
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• 2000

Non-stoichiometric ceramics of $Ni_{x}ZnO_{1-x}Fe_{2}O_{4}$ were prepared by self-propagating high temperature synthesis reaction with various processing conditions and their stoichometric numbers were determined by neutron diffraction. The neutron diffraction patterns were measured at room temperature using monochromatic neutrons with a wave length of 0.18339 nm from a Ge(331) mocochromator at a 90 degree take off angle. The Rietveld refinement of each pattern converged to good agreement (x2=1.88-2.24). The neutron diffraction analysis revealed the final stoichiometries of the ferrites were $Ni_{0.38}Zn_{0.62}Fe_{2}O_{4}$ and $Ni_{0.33}Zn_{0.67}Fe_{2}O_{4]$, respectively. This supports that final stoichiometric number of the self-propagating high temperature synthesis product can be controlled by the processing parameters during the combustion reaction.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1460-1462
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• 2001

초고속 전력선 통신을 위한 고주파수 대역에서 안정적인 자기적 특성을 갖는 Ni-Zn ferrite를 개발하기 위해서 투자율은 낮지만 주파수 특성이 우수한 $Ni_{0.8}Zn_{0.2}Fe_2O_4$를 기본조성으로 입자를 성장시키는 $Bi_2O_3$를 0.7, 비저항을 증가 시키는 CaO를 0.3, 그리고 입자를 균일하게 하는 $V_2O_5$를 0.1 wt% 첨가하여 미세구조를 제어하고, 다시 고주파 특성을 향상시킬 것으로 기대되는 $Co_3O_4$를 0, 0.3, 0.5, 0.7 wt%로 변화시켜 자기적 특성을 조사하였다. $Co_3O_4$가 밀도 및 미세구조에는 영향을 미치지 않았으나 0.3, 0.5 wt% 첨가시 첨가하지 않은 조성보다 투자율은 감소하였으나 사용 한계 주파수로 여겨지는 공명주파수가 각각 19.905, 19.205 MHz로 크게 증가하였다. 그리고 전체 전력 손실도 $Co_3O_4$를 첨가했을 때 감소하였으나 첨가량에는 큰 변화가 없었다. 와전류 손실이 전체 전력손실에 지배적인 영향을 미치고 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.490-495
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• 2003

The electromagnetic properties and thermal behavior of Mn-Zn ferrite cores for the blocking filter of Power Line Communication(PLC) application were investigated as a function of additives. The highest density and permeability were 4.98 g/$\textrm{cm}^2$ and 8,221, respectively and were obtained to the specimen with composition of MnO 24 mol%, ZnO 25 mol% and Fe$_2$O$_3$ mol%, added MoO$_3$ of 400 ppm, SiO$_2$ of 100 ppm, and CaO of 200 ppm. The uniform grains were organized, and the microstructures were densified due to reduction of pores in the specimen. The permeability was increased up to 13,904 as the temperature of specimen increased to 110$^{\circ}C$. However, it was decreased precipitously under 100 over 110$^{\circ}C$. The exothermic behavior was observed in the frequency range from 1 kHz to 1 MHz, and the maximum temperature of specimen was 102$^{\circ}C$ at 1 MHz. In the consequence, the Mn-Zn ferrite core developed in this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to 93$^{\circ}C$ in the range of 100 kHz to 450 kHz bandwidth qualified for PLC. The blocking filters were designed for single phase and three phases using the in-line and non-contact core. The best attenuation ratios of -46.46 dB and -73.9 dB were measured in the range of 100 kHz to 450 kHz bandwidth, respectively.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.332-335
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• 2020

Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.

• Journal of Korea Foundry Society
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• v.35 no.3
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• pp.53-61
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• 2015

Effects of Zn addition on the microstructure and corrosion behavior of Mg-8%Al-(0-1)%Zn casting alloys were investigated. With increasing Zn content, the amount of ${\beta}(Mg_{17}Al_{12})$ phase increased, while ${\alpha}$-(Mg) dendritic cell size became reduced. The corrosion rate decreased continuously with the increase in the Zn content. The evaluation of the microstructural evolution indicates that the improved barrier effect of ${\beta}$ particles formed more continuously along the dendritic cell boundaries and the incorporation of more ZnO into the surface corrosion product, by which the absorption of $Cl^-$ ions is impeded, are responsible for the better corrosion resistance in relation to the Zn addition.

• Journal of Animal Science and Technology
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• v.64 no.4
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• pp.717-726
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• 2022

The study evaluated different molt-inducing methods to achieve the main goal of molting in commercial layers during molting and post-molting periods. A total of 400 60-week-old Lohmann Brown layers were randomly divided into five groups (eight replicates of 10 birds for each group). Laying hens in the fasting control group received no diet from day 1 to day 10. The second group received a molt-inducing diet recommended by the breeding company. The third group received a wheat bran-based diet. The fourth group received a commercial layer diet with 8,000 ppm zinc (as zinc oxide, ZnO). The fifth group received an induced molting diet given to the second group with 8,000 ppm zinc, respectively. Egg production in the fasting control group and groups fed a diet with ZnO were significantly lower (p < 0.001) than those in groups fed the molt-inducing and wheat bran-based diets without ZnO during molting. Egg laying in the fasting control group was rapidly reduced and stopped on the 5.9th day of molting. In both groups having molt treatment with ZnO, egg production was similarly reduced and ceased on the 6.9th day and 7.0th day of molting, respectively, none of them differed significantly from the control. Layers fed molt-inducing diet or wheat bran-based diet did not reach the cessation of laying even on the 28th d of molting period. Relative weights of the ovary and growing oocytes of layers subjected to fasting or fed diets with ZnO were significantly lower than those of other groups. During the first two weeks of post molting, layers fed molt-inducing diet with ZnO showed higher egg production than the other two groups (p < 0.01). The eggshell strength in the group fed the commercial diet with ZnO was significantly higher than those fed the molt-inducing diet or wheat bran-based diets at 6 weeks of post molting (p < 0.05). These results suggest that the non-feed withdrawal molting using ZnO is more effective in inducing molting and increasing post-molt egg production and egg quality than other methods using a molt-inducing diet alone or wheat bran-based diet without ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.38-43
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• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.218-224
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• 2014

In order to explore new coordination frameworks with novel designed 3-nitrophthalic acid and the same N-donor ancillary ligand, a series of novel coordination complexes, namely, $[Cd_2(3-NPA)_2(TBZ)_2(H_2O)_2]{\cdot}2H_2O$(1), $[Zn_2(3-NPA)_2(TBZ)_2]$(2), $[Zn_2O(3-NPA)(TBZ)(H_2O)]_n$(3), $[Co(3-NPA)(TBZ)(H_2O)]_n$(4) (3-$NPAH_2$ = 3-nitrophthalic acid), have been hydrothermally synthesized through the reaction of 3-nitrophthalic acid with divalent transition-metal salts in the presence of N-donor ancillary coligand (TBZ = thiabendazole). As a result of various coordination modes of the versatile 3-$NPAH_2$ and the coligand TBZ, these complexes exhibit structural diversity. X-ray structure analysis reveals that 1 and 2 are 0D molecular rings, while 3 and 4 are one-dimensional (1D) infinite chain polymers. And the weak O-H${\cdots}$O hydrogen bonds and C-H${\cdots}$O nonclassical hydrogen bonds as well as ${\pi}-{\pi}$ stacking also play important roles in affecting the final structure where complexes 1, 3 and 4 have 3D supramolecular architectures, while complex 2 has a 2D supramolecular network. Also, IR spectra, fluorescence properties and thermal decomposition process of complexes 1-4 were investigated.