Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Effect of InGaZnO Solution Concentration on the Electrical Properties of Drop-Cast Oxide Thin-Film Transistors

InGaZnO 용액의 농도가 Drop-casting으로 제작된 산화물 박막 트랜지스터의 전기적 특성에 미치는 영향

  • Noh, Eun-Kyung (Department of Creative Convergence Engineering, Hanbat National University) ;
  • Yu, Kyeong Min (Research Instite of Printed Electronics & 3D Printing, Industry University Cooperation Foundation, Hanbat National Unversity) ;
  • Kim, Min-Hoi (Department of Creative Convergence Engineering, Hanbat National University)
  • 노은경 (한밭대학교 창의융합학과) ;
  • 유경민 (한밭대학교 산학협력단 인쇄전자 3D 프린팅 공학 연구소) ;
  • 김민회 (한밭대학교 창의융합학과)
  • Received : 2020.09.04
  • Accepted : 2020.09.09
  • Published : 2020.09.30
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Abstract

Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.

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