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http://dx.doi.org/10.46670/JSST.2020.29.5.332

Effect of InGaZnO Solution Concentration on the Electrical Properties of Drop-Cast Oxide Thin-Film Transistors  

Noh, Eun-Kyung (Department of Creative Convergence Engineering, Hanbat National University)
Yu, Kyeong Min (Research Instite of Printed Electronics & 3D Printing, Industry University Cooperation Foundation, Hanbat National Unversity)
Kim, Min-Hoi (Department of Creative Convergence Engineering, Hanbat National University)
Publication Information
Journal of Sensor Science and Technology / v.29, no.5, 2020 , pp. 332-335 More about this Journal
Abstract
Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.
Keywords
Drop casting; InGaZnO TFT; Electrical performance; Concentration; Semiconductor;
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