• ETRI Journal
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• 제39권5호
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• pp.746-755
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• 2017

In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage ($V_t$) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding $n^+/p^+$ floating regions. Moreover, the holding voltage ($V_h$) is improved by using segmented technology. The proposed circuit was fabricated using a $0.18-{\mu}m$ bipolar-CMOS-DMOS process with a width of $100{\mu}m$. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the $V_t$ of the proposed circuit increased from 14 V to 27.8 V, and $V_h$ increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machine-model surges at 450 V.

• 대한전자공학회논문지SD
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• 제49권2호
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• pp.47-55
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• 2012

본 논문에서는 능동-가중치 전하 샘플링을 이용하는 고차의 시간상 이동평균 필터가 제안된다. 샘플링되는 전하의 비율을 바꾸기 위해서 가변 트랜스컨덕턴스 증폭기(variable transconductance OTA)가 전하 샘플러 앞단에 사용되며, 전하의 비율은 OTA의 제어 트랜지스터들을 스위칭하여 효과적으로 변하게 된다. 그 결과, 능동-가중치 샘플링을 이용하는 고차의 시간상 이동평균 연산이 가능해진다. 또한, OTA의 트랜스컨덕턴스는 제어 트랜지스터들의 크기를 통해 비율이 조절되므로 비교적 정확하며 공정 변화에 안정적이다. 고차의 시간상 이동평균 필터는 소수의 스위치와 샘플링 커패시터를 사용하므로 작은 크기와 높은 전압 이득을 가지며 기생 성분의 발생을 줄일 수 있다. 제안된 고차의 시간상 이동평균은 2차-2입력 시간상 이동평균 (TMA-$2^2$) 필터로 TSMC $0.18-{\mu}m$ CMOS 공정을 이용하여 구현되었다. 설계된 필터의 전압 이득은 약 16.7 dB이며 P1dB와 IIP3는 각각 -32.5 dBm과 -23.7 dBm으로 시뮬레이션된다. 출력 버퍼를 포함한 전체 직류 전류 소모는 약 9.7 mA이다.

• 센서학회지
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• 제27권2호
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• pp.93-98
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• 2018

In this paper, an energy-efficient 11.49-bit successive approximation register (SAR) capacitance-to-digital converter (CDC) for capacitive sensors with a figure of merit (FoM) of 31.6 pJ/conversion-step is presented. The CDC employs a SAR algorithm to obtain low power consumption and a simplified structure. The proposed circuit uses a capacitive sensing amplifier (CSA) and a dynamic latch comparator to achieve parasitic capacitance-insensitive operation. The CSA adopts a correlated double sampling (CDS) technique to reduce flicker (1/f) noise to achieve low-noise characteristics. The SAR algorithm is implemented in dual operating mode, using an 8-bit coarse programmable capacitor array in the capacitance-domain and an 8-bit R-2R digital-to-analog converter (DAC) in the charge-domain. The proposed CDC achieves a wide input capacitance range of 29.4 pF and a high resolution of 0.449 fF. The CDC is fabricated in a $0.18-{\mu}m$ 1P6M complementary metal-oxide-semiconductor (CMOS) process with an active area of 0.55 mm2. The total power consumption of the CDC is $86.4{\mu}W$ with a 1.8-V supply. The SAR CDC achieves a measured 11.49-bit resolution within a conversion time of 1.025 ms and an energy-efficiency FoM of 31.6 pJ/step.

• ETRI Journal
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• 제38권4호
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• pp.654-664
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• 2016

This paper presents a transformer-based reconfigurable synchronous boost converter. The lowest maximum power point tracking (MPPT)-input voltage and peak efficiency of the proposed boost converter, 20 mV and 88%, respectively, were achieved using a reconfigurable synchronous structure, static power loss minimization design, and efficiency boost mode change (EBMC) method. The proposed reconfigurable synchronous structure for high efficiency enables both a transformer-based self-startup mode (TSM) and an inductor-based MPPT mode (IMM) with a power PMOS switch instead of a diode. In addition, a static power loss minimization design, which was developed to reduce the leakage current of the native switch and quiescent current of the control blocks, enables a low input operation voltage. Furthermore, the proposed EBMC method is able to change the TSM into IMM with no additional time or energy loss. A prototype chip was implemented using a $0.18-{\mu}m$ CMOS process, and operates within an input voltage range of 9 mV to 1 V, and an output voltage range of 1 V to 3.3 V, and provides a maximum output power of 37 mW.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2441-2446
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• 2018

This paper presents a radio frequency-to-direct current (RF-to-DC) converter for special RF power harvesting application at 915 MHz. The major featured components of the proposed RF-to-DC converter is the combination of a cross-coupled rectifier and an active diode: first, the cross-coupled rectifier boosts the input voltage to desired level, and an active diode blocks the reverse current, respectively. A prototype was implemented using $0.18{\mu}m$ CMOS technology, and the performance was proven from the fact that the targeted RF harvesting system's full-operation with higher power efficiency; even if the system's input power gets lower (e.g., from nominal 0 to min. -12 dBm), the proposed RF-to-DC converter constantly provides 1.47 V, which is exactly the voltage level to drive follow up system components like DC-to-DC converter and so on. And, maximum power conversion efficiency is 82 % calculated from the 0 dBm input power, 2.3 mA load current.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.318-330
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• 2013

This paper presents a high-linearity low-noise small-size programmable gain amplifier (PGA) based on a new low-noise low-distortion differential amplifier and a proposed reconfiguration technique. The proposed differential amplifier combines an inverter-based differential pair with an adaptive biasing circuit to reduce noise and distortion. The reconfiguration technique saves the chip size by half by utilizing the same differential pair for the input transconductance and load-stage, interchangeably. Fabricated in $0.18-{\mu}m$ CMOS, the proposed PGA shows a dB-linear control range of 21dB in 16 steps from -11 dB to 10 dB with a gain error of less than ${\pm}0.33$ dB, an IIP3 of 7.4~14.5 dBm, a P1dB of -7~1.2 dBm, a noise figure of 13dB, and a 3-dB bandwidth of 270MHz at the maximum gain, respectively. The PGA occupies a chip area of $0.04mm^2$ and consumes only 1.3 mA from the 1.8 V supply.

• IEIE Transactions on Smart Processing and Computing
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• 제4권4호
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• pp.291-296
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• 2015

This paper describes the design of a high-speed comparator for high-speed automatic test equipment (ATE). The normal comparator block, which compares the detected signal from the device under test (DUT) to the reference signal from an internal digital-to-analog converter (DAC), is composed of a rail-to-rail first pre-amplifier, a hysteresis amplifier, and a third pre-amplifier and latch for high-speed operation. The proposed continuous comparator handles high-frequency signals up to 800MHz and a wide range of input signals (0~5V). Also, to compare the differences of both common signals and differential signals between two DUTs, the proposed differential mode comparator exploits one differential difference amplifier (DDA) as a pre-amplifier in the comparator, while a conventional differential comparator uses three op-amps as a pre-amplifier. The chip was implemented with $0.18{\mu}m$ Bipolar CMOS DEMOS (BCDMOS) technology, can compare signal differences of 5mV, and operates in a frequency range up to 800MHz. The chip area is $0.514mm^2$.

• 한국통신학회논문지
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• 제41권11호
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• pp.1566-1573
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• 2016

본 논문은 무인기(UAV) 기반 공중 네트워크 시스템을 위한 polyphase In-phase/Quadrature-phase(I/Q) 네트워크 기반 빔-포밍 수신부를 제안한다. 제안하는 polyphase I/Q 네트워크는 낮은 Q-factor와 높은 임피던스를 갖기 때문에 작은 손실로 벡터 변조기를 구동할 수 있다. 벡터 변조기는 가변 이득 증폭기(VGA)로 구성되며, In-phase 및 Quadrature-phase 위상 신호의 진폭 제어 및 벡터 합을 통해 위상을 가변한다. 제안하는 빔-포밍 수신부는 TSMC $0.18{\mu}m$ CMOS 공정을 통해 구현하였다. 프로토타입은 5-6GHz 주파수 대역(-40dB 입력)에서 검증하였다. 6bit 벡터 변조기 제어를 통해 $5.6^{\circ}$ LSB (least significant bit)로 $360^{\circ}$ 위상 가변이 가능하다. 위상 오차는 평균 $1.6^{\circ}$이며, 진폭 오차는 평균 0.3dB이다.

• 대한전자공학회논문지SD
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• 제48권1호
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• pp.22-30
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• 2011

본 논문에서는 CMMB (China Mobile Multimedia Broadcasting) 표준의 LDPC(Low Density Parity Check) 부호 복호기를 효과적으로 구현하는 방법을 제안한다. 본 논문은 AGU(Address Generation Unit)와 Index 행렬을 이용하여 효율적으로 주소 값을 생성함으로써, 메모리 사용량을 줄이고 복잡도를 감소시켰다. 또한 LDPC 부호 복호기의 throughput을 향상시키기 위해 한 클럭에 여러 메시지를 전달하는 부분 병렬 구조를 사용하였고, 하나의 주소를 사용하여 병렬적으로 동작이 가능하도록 노드 그룹핑을 진행하였다. 제안하는 LDPC 부호 복호기는 Verilog HDL로 구현하였으며, Synopsys사의 Design Compiler를 이용하여 Chartered $0.18{\mu}m$ CMOS cell library 공정으로 합성하였다. 제안된 복호기는 455K(in NAND2)의 크기를 가지며, 185MHz의 클럭에서 1/2 부호는 14.32 Mbps의 throughput을 갖고, 3/4 부호는 26.97Mbps의 throughput을 갖는다. 또한 기존의 CMMB용 LDPC의 메모리와 비교하여 0.39% 의 메모리만 사용된다.

• 전기전자학회논문지
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• 제22권1호
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• pp.38-45
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• 2018

ARIA, AES 블록암호와 Whirlpool 해시함수를 단일 하드웨어 구조로 통합하여 효율적으로 구현한 크립토 프로세서에 대해 기술한다. ARIA, AES, Whirlpool의 알고리듬 특성을 기반으로 치환계층과 확산계층의 하드웨어 자원이 공유되도록 설계를 최적화하였다. Whirlpool 해시의 라운드 변환과 라운드 키 확장을 위해 라운드 블록이 시분할 방식으로 동작하도록 설계하였으며, 이를 통해 하드웨어 경량화를 이루었다. ARIA-AES-Whirlpool 통합 크립토 프로세서는 Virtex5 FPGA에 구현하여 하드웨어 동작을 검증하였으며, $0.18{\mu}m$ CMOS 셀 라이브러리로 합성한 결과 68,531 GE로 구현되었다. 80 MHz 클록 주파수로 동작하는 경우에, ARIA, AES 블록암호는 각각 602~787 Mbps, 682~930 Mbps, 그리고 Whirpool 해시는 512 Mbps의 성능을 갖는 것으로 예측되었다.