• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

• 한국정보통신학회논문지
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• 제18권4호
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• pp.876-884
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• 2014

본 논문에서는 개선된 정규화 최소합(improved normalized min-sum) 복호 알고리듬을 적용한 LDPC 복호기를 설계하였다. 설계된 LDPC 복호기는 IEEE 802.16e 모바일 WiMAX 표준의 19가지 블록길이(576~2304)에 따른 6가지 부호율(1/2, 2/3A, 2/3B, 3/4A, 3/4B, 5/6)과 IEEE 802.11n 무선 랜 표준의 3가지 블록길이(648, 1296, 1944)에 따른 4가지 부호율(1/2, 2/3, 3/4, 5/6)을 지원한다. INMS 복호 알고리듬과 SM(sign-magnitude) 수체계 연산을 기반으로 하는 DFU(decoding function unit)을 구현하여 하드웨어 복잡도와 복호 성능을 최적화시켰다. 설계된 LDPC 복호기는 0.18-${\mu}m$ CMOS 셀 라이브러리를 이용하여 100 MHz 동작 주파수로 합성한 결과, 284,409 게이트와 62,976 비트의 메모리로 구현되었으며, FPGA 구현을 통해 하드웨어 동작을 검증하였다. 1.8V 전원전압에서 100 MHz로 동작 가능할 것으로 평가되며, 부호율과 블록길이에 따라 약 82~218 Mbps의 성능을 가질 것으로 예상된다.

• Journal of electromagnetic engineering and science
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• 제10권1호
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• pp.25-27
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• 2010

This paper presents a gain and phase mismatch calibration technique for an image-reject RF receiver. The gain mismatch is calibrated by directly measuring the output signal amplitudes of two signal paths. The phase mismatch is calibrated by measuring the output amplitude of the final IF output at the image band. The calibration of the gain and phase mismatch is performed at power-up, and the normal operation of the RF receiver does not interfere with the mismatch calibration circuit. To verify the proposed technique, a 2.4-GHz Weaver image-reject receiver with the gain and phase mismatch calibration circuit is implemented in a 0.18-${\mu}m$ CMOS technology. The overall receiver achieves a voltage gain of 45 dB and a noise figure of 4.8 dB. The image rejection ratio(IRR) is improved from 31 dB to 59.76 dB even with 1 dB and $5^{\circ}$ mismatch in gain and phase, respectively.

• ETRI Journal
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• 제36권2호
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• pp.214-223
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• 2014

A fully-integrated penta-band reconfigurable power amplifier (PA) is developed for handset Tx applications. The output structure of the proposed PA is composed of the fixed output matching network, power and frequency reconfigurable networks, and post-PA distribution switches. In this work, a new reconfiguration technique is proposed for a specific band requiring power and frequency reconfiguration simultaneously. The design parameters for the proposed reconfiguration are newly derived and applied to the PA. To reduce the module size, the switches of reconfigurable output networks and post-PA switches are integrated into a single IC using a $0.18{\mu}m$ silicon-on-insulator CMOS process, and a compact size of $5mm{\times}5mm$ is thus achieved. The fabricated W-CDMA PA module shows adjacent channel leakage ratios better than -39 dBc up to the rated linear power and power-added efficiencies of higher than around 38% at the maximum linear output power over all the bands. Efficiency degradation is limited to 2.5% to 3% compared to the single-band reference PA.

• 정보통신설비학회논문지
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• 제9권4호
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• pp.141-146
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• 2010

In this paper, bandgap reference PTAT(Proportional to Absolute Temperature) circuit and flexible gain control of LNA(Low Noise Amplifier) which is usable in Zigbee system of 2.4GHz band are designed by TSMC $0.18{\mu}m$ CMOS library. PTAT bandgap reference circuit is proposed to minimize the instability of CMOS circuit which may be unstable in temperature changes. This circuit is designed such that output voltage remains within 1.3V even when the temperature varies from $-40^{\circ}C$ to $-50^{\circ}C$ when applied to the gate bias voltage of LNA. In addition, the LNA is designed to be operated on 2.4GHz which is applicable to Zigbee system and able to select gains by changing output impedance using 4 NMOS operated switches. The simulation result shows that achieved gain is 14.3~17.6dB and NF (Noise Figure) 1.008~1.032dB.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.525-526
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• 2008

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.305-308
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• 2002

An 1.8V 6bit IGSPS ADC for high speed data acquisition is discussed in this paper. This ADC is based on a flash ADC architecture because the flash ADC is the only practical architecture at conversion rates of IGSPS and beyond. A straightforward 6bit full flash A/D converter consists of two resistive ladders with 63 laps, 63 comparators and digital blocks. One important source of errors in flash A/D converter is caused by the capacitive feedthrough of the high frequency input signal to the resistive reference-lauder. Consequently. the voltage at each tap of the ladder network can change its nominal DC value. This means large transistors have a large parasitic capacitance. Therefore, a dual resistive ladder with capacitor is employed to fix the DC value. Each resistive ladder generates 32 clean reference voltages which alternates with each other. And a two-stage amplifier is also used to reduce the effect of the capacitive feedthrough by minimizing the size of MOS connected to reference voltage. The proposed ADC is based on 0.18${\mu}{\textrm}{m}$ 1-poly 6-metal n-well CMOS technology, and it consumes 307㎽ at 1.8V power supply.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.797-800
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• 2005

In this paper, the designed 10-bit current steering data driving circuit consists of bias circuits, shift registers, data and line latches, level shifters, and 10-bit D/A converters. This data driving circuit can improve image quality, driving speed, and can reduce process error, DNL error, and glitch noise. To reduce current cells, the 10-bit D/A converter was designed 3+3+4 hybrid type. As a result 49 current cells are decreased. The transient analysis shows that currents flows a few of mA in data line and the currents have 1024 gray levels of current values. Total circuits are designed for 10 ${\mu}s$ speed. Thus the designed 10-bit current steering data driving circuit can be usable in HDTV/XGA AMOLED displays. These data driving circuits are designed for 0.35 ${\mu}m$ CMOS process at 3.3 V and 18 V supply voltage and simulated with HSPICE..

• ETRI Journal
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• 제37권1호
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• 센서학회지
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• 제27권1호
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• pp.31-35
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• 2018

This paper describes a low-power, SNDR (signal-to-noise and distortion ration) enhanced SAR (successive approximation register) type 12b ADC (analog-to-digital converter) with noise shaping technique. For low power consumption and small chip size of the DAC (digital-to-analog converter), the top plate sampling technique and the dummy capacitor switching technique are used to implement 12b operation with a 10b capacitor array in DAC. Noise shaping technique is applied to improve the SNDR by reducing the errors from the mismatching of DAC capacitor arrays, the errors caused by attenuation capacitor and the errors from the comparator noise. The proposed SAR ADC is designed with a $0.18{\mu}m$ CMOS process. The simulation results show that the SNDR of the SAR ADC without the noise shaping technique is 71 dB and that of the SAR ADC with the noise shaping technique is 84 dB. We can achieve the 13 dB improvement in SNDR with this noise shaping technique. The power consumption is $73.8{\mu}W$ and the FoM (figure-of-merit) is 5.2fJ/conversion-step.