• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.18-22
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• 2005

This paper presents the analog adaptive phase-locked loop (PLL) architecture with a new adaptive bandwidth controller to reduce locking time and minimize jitter in PLL output for wireless communication. It adaptively controls the loop bandwidth according to the locking status. When the phase error is large, the PLL increases the loop bandwidth and reduces locking time. When the phase error is small, the PLL decreases the loop bandwidth and minimizes output jitters. The adaptive bandwidth control is implemented by controlling charge pump current depending on the locking status. A 1.28-GHz CMOS phase-locked loop with adaptive bandwidth control is designed with 0.35 $mu$m CMOS technology. It is simulated by HSPICE and achieves the primary reference sidebands at the output of the VCO are approximately -80dBc.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.88-98
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• 2012

In this paper, the relationship between the bandwidth (BW) and power efficiency of a source follower based (SFB) filter is quantitatively analyzed, and a design methodology for a SFB filter for optimized BW - power consumption is introduced. The proposed design methodology achieves a maximum BW at a target quality (Q) factor for the given power consumption constraint by controlling design factors individually. In order to achieve the target BW from the maximized BW, a tuning method is introduced. Through the proposed design methodology, a fourth order Butterworth filter was implemented in 0.18 ${\mu}m$ CMOS technology. The measured BW, power consumption, and IIP3 are 100 MHz, 33 ${\mu}W$, and 9 dBm, respectively. Compared with other filter structures, the measured results show high BW - power efficiency.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.349-355
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• 2015

A fully-differential touch-screen sensing architecture is presented to improve noise immunity and also support most multi-touch events minimizing the number of amplifiers and their silicon area. A correlated double sampling function is incorporated to reduce DC offset and low-frequency noises, and a stabilizer circuit is also embedded to minimize inherent transient fluctuations. A prototype of the proposed readout circuit was fabricated in a $0.18{\mu}m$ CMOS process and its differential operation in response to various touch events was experimentally verified. With a 3.3 V supply, the current dissipation was 3.4 mA at normal operation and $140{\mu}A$ in standby mode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.23-32
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• 2011

A 40 fJ/c-s, 1 V, 10-bit SAR ADC is presented for energy constrained wearable body sensor network application. The proposed 10-bit dual sampling capacitive DAC topology reduces switching energy by 62% compared with 10-bit conventional SAR ADC. Also, it is more robust to capacitor mismatch than the conventional architecture due to its cancelling effect of each capacitive DAC. The proposed SAR ADC is fabricated in 0.18 ${\mu}m$ 1P6M CMOS technology and occupies 1.17 $mm^2$ including pads. It dissipates only 1.1 ${\mu}W$ with 1 V supply voltage while operating at 100 kS/s.

• Journal of IKEEE
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• v.15 no.2
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• pp.129-133
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• 2011

A spread spectrum clock generation is an efficient way to reduce electro-magnetic interference (EMI) radiation in modern mixed signal chip systems. The proposed circuit generates the spread spectrum clock by directly injecting the modulation voltage into the voltage-controlled oscillator (VCO) current source for SATA II. The resulting 33KHz modulation profile has a Hersey-Kiss shape with a rounded peak. The chip has been fabricated using $0.18{\mu}m$ CMOS process and test results show that the proposed circuit achieves 0.509% (5090ppm) down spreading at 1.5GHz and peak power reduction of 10dB. The active chip area is 0.36mm ${\times}$ 0.49mm and the chip consumes 30mW power at 1.5GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.629-633
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• 2015

An active balun using current steering for phase correction is presented. The proposed active balun is constructed with two different unit balun structures based on current steering to reduce phase and amplitude errors. This type of topology can be compared with the conventional phase and amplitude correction techniques which do not incorporate the current steering. Designed and fabricated active balun in $0.18{\mu}m$ CMOS process operates over 0.95 - 1.45 GHz band, showing input reflection coefficient under -15 dB, phase error of $11^{\circ}$ and gain error of 0.5 dB. Gain is measured to be 0.3 dB maximum and power consumption of 7.2 mW is measured.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.1
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• pp.1-10
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• 2008

In this paper, we designed a facial feature(eyes, a moult and a nose) detection hardware based on the ICT transform which was developed for face detection earlier. Our design used a pipeline architecture for high throughput and it also tried to reduce memory size and memory access rate. The algerian and its hardware implementation were tested on the BioID database, which is a worldwide face detection test bed, and its facial feature detection rate was 100% both in software and hardware, assuming the face boundary was correctly detected. After synthesizing the hardware on Dongbu $0.18{\mu}m$ CMOS library, its die size was $376,821{\mu}m^2$ with the maximum operating clock 78MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.34-39
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• 2007

Serial links via backplane channels suffer from severe signal integrity problems which are normally caused by channel imperfections, such as flat loss, frequency-dependent loss, reflection, etc. Particularly, the frequency-dependent loss causes ISI(Inter-Symbol-Interference) at signal waveforms. Therefore, adaptive equalizing techniques have been exploited in many products to facilitate the ISI problem. In this paper, we present an analog adaptive equalizer circuit designed in a $0.18{\mu}m$ CMOS process. It achieves 10Gb/s data transmission through a long 34-inch backplane channel(or transmission line). The post-layout simulations demonstrate $8ps_{p-p}$ jitter with 10mW power dissipation. The core of the adaptive equalizer occupies the area of $0.56mm^2$.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.441-442
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• 2008

In this paper a Fractional-N frequency synthesizer is designed for UHF RFID readers. It satisfies the ISO/IEC frequency band $(860{\sim}960MHz)$ and is also applicable to mobile RFID readers. It is designed using a $0.18{\mu}$ RF CMOS process. The measured results show that the designed circuit has a phase noise of -103dBc/Hz at 100kHz offset and consumes 9mA from a 1.8V supply. The channel switching time of $10{\mu}s$ over 5MHz transition have been achieved, and the chip size including PADs is $1.8{\times}0.99mm^2$