• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.398-401
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• 2011

This paper presents a high-efficiency CMOS PWM DC-DC buck converter. It generates a constant output voltage(1-2.8V), from an input voltage(3.4-3.9V). Inductor-based type is chosen and inductor current is controlled with PWM operation. The designed circuit consists of power switch, Pulse Width Generation, Buffer, Zero Current Sensing, Current Sensing Circuit, Clock & Ramp generation, V-I Converter, Soft Start, Compensator and Modulator. Switching Frequency is 1MHz, It operates in CCM when the load current is more than 40mA, and the maximum efficiency is 98.71% at 100mA. Output voltage ripple is 0.98mV(input voltage:3.5V, output voltage:2.5V). The performance of the designed circuit has been verified through extensive simulation using a CMOS $0.18{\mu}m$ technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.139-143
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• 2005

In this paper, we propose the design on LNA and Down-mixer for MB-OFDM UWB using $0.18\;{\mu}m$ CMOS. LNA, Down-mixer design result shows that it covers the frequency range ken 3 GHz to 5 GHz. The LNA gain is larger than 12.8 dB, and noise figure about 2.6 dB. Double balanced differential down-mixer is designed less than 2 dB gainflatness, and it has over 30 dB LO leakage, feedthrough characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1730-1736
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• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.529-530
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• 2008

The proposed CMOS Quadrature VCO for WLAN application was designed in TSMC $0.18\;{\mu}m$ RF CMOS technology. The QVCO based on NMOS back-gate as a coupling transistor and switched capacitors array without tail transistors is designed to generate quadrature output signals. The simulated results show that the QVCO core consumed 3.67 mA and 6.6 mW from a 1.8 V supply. The QVCO is tunable between $4.76\;GHz\;{\sim}\;6.35\;GHz$ and has a phase noise lower than -116.8 ㏈c/Hz at 1 MHz offset over the entire tuning range

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.50-59
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• 2007

[ $0.18-{\mu}m$ ] CMOS 1.2-V 2nd-order ${\Sigma}{\Delta}$ modulator with full-feedforward topology is designed. Using full-feedforward topology makes op-amp performance requirements much less stringent, therefore it has been adopted as a good candidate for low-voltage low-power applications throughout the world. Also, ${\Sigma}{\Delta}$ modulator is designed with top-down design approach, therefore various nonideal effects of op-amp are modeled in this paper.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.207-212
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• 2012

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

• Journal of IKEEE
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• v.13 no.2
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• pp.118-125
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• 2009

With recent advancement of high-speed, multi-gigabit data transmission capabilities, transmitters usually send data without clock signals for reduction of hardware complexity, power consumption, and cost. Therefore clock and data recovery circuits(CDR) become important to recover the clock and data signals and have been widely studied. This paper presents the design of 10Gbps CDR in 0.18$\mu$m CMOS process. A quarter-rate bang-bang phase detector is designed to reduce the power and circuit complexity, and a 4-stage LC-type VCO is used to improve the jitter characteristics. Simulation results show that the designed CDR consumes 80mW from a 1.8V supply, and exhibits a peak-to-peak jitter of 2.2ps in the recovered clock. The chip layout area excluding pads is 1.26mm$\times$1.05mm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1526-1531
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• 2009

This paper describes the design of a 5th order Elliptic CMOS Gm-C low-voltage filter for the RFID reader IC. The designed filter is composed of CMOS differential transconductors by parallel gain circuits to improve the gain of the conventional self-biased differential amplifier. The filter is designed to operate in low-voltage 1.8V to meet the specification of the RFID reader filter. The results of HSPICE simulation using 1.8V-0.18${\mu}m$CMOS processing parameter showed that the designed 5th order Elliptic low-pass filter satisfied the cutoff frequency of 1.35MHz given by the design specification.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.45-52
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• 2008

We investigated the design of an RF-powered, wireless temperature sensor tag chip using $0.18-{\mu}m$ CMOS technology. The transponder generates its own power supply from small incident RF signal using Schottky diodes in voltage multiplier. Ambient temperature is measured using a new low-power temperature-to-voltage converter, and an 8-bit single-slope ADC converts the measured voltage to digital data. ASK demodulator and digital control are combined to identify unique transponder (ID) sent by base station for multi-transponder applications. The measurement of the temperature sensor tag chip showed a resolution of $0.64^{\circ}C/LSB$ in the range from $20^{\circ}C$ to $100^{\circ}C$, which is suitable for environmental temperature monitoring. The chip size is $1.1{\times}0.34mm^2$, and operates at clock frequency of 100 kHz while consuming $64{\mu}W$ power. The temperature sensor required a -11 dBm RF input power, supported a conversion rate of 12.5 k-samples/sec, and a maximum error of $0.5^{\circ}C$.