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A High-Efficiency, Robust Temperature/voltage Variation, Triple-mode DC-DC Converter (고효율, Temperature/voltage 변화에 둔감한 Triple-mode CMOS DC-DC Converter)

  • Lim, Ji-Hoon;Ha, Jong-Chan;Kim, Sang-Kook;Wee, Jae-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.6
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    • pp.1-9
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    • 2008
  • This paper suggests the triple-mode CMOS DC-DC converter that has temperature/voltage variation compensation techniques. The proposed triple-mode CMOS DC-DC converter is used to generate constant or variable voltages of 0.6-2.2V within battery source range of 3.3-5.5V. Also, it supports triple modes, which include Pulse Width Modulator (PWM) mode, Pulse Frequency Modulator (PFM) mode and Low Drop-Out (LDO) mode. Moreover, it uses 1MHz low-power CMOS ring oscillator that will compensate malfunction of chip in temperature/voltage variation condition. The proposed triple-mode CMOS DC-DC converter, which generates output voltages of 0.6-2.2V with an input voltage sources of 3.3-5.5V, exhibits the maximum output ripple voltage of below 10mV at PWM mode, 15mV at PFM mode and 4mV at LDO mode. And the proposed converter has maximum efficiency of 93% at PWM mode. Even at $-25{\sim}80^{\circ}C$ temperature variations, it has kept the output voltage level within 0.8% at PWM/PFM/LDO modes. For the verification of proposed triple-mode CMOS DC-DC converter, the simulations are carried out with $0.35{\mu}m$ CMOS technology and chip test is carried out.

Design of 1.55-mm InGaAsP Laser Diode Integrated with a Tapered Ridge Mode Transformer (테이퍼 모드 변환기를 집적한 1.55-$\mu m$ 레이저다이오드의 설계)

  • 이기민
    • Proceedings of the Optical Society of Korea Conference
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    • 1999.08a
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    • pp.216-217
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    • 1999
  • A tapered ridge mode laser diode with increased spot size is designed and analyzed . The mode evolution concept is applied to design the taper and the method does not require regrowth or multiple-step etching technique. Three-dimensional BPM results show that the designed taper can transfer more than 97% of the mode power in the active region to the expanded mode.

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A Study on carbon nitride thin films prepared by RF reactively sputtering (RF 반응성 스퍼터링에 의한 비정질 carbon nitride 박막의 제조에 관한 연구)

  • 이철화;김병수;이상희;진윤영;이덕출;박구범
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.406-408
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    • 1999
  • Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

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The Contribution of the S&T-Centered Research Universities on the Regional Innovation: Based on Mode 1 and Mode 2 Knowledge Performances (과학기술특성화대학의 지역혁신 연계성 분석: 모드 1과 모드 2 지식성과를 중심으로)

  • Nha, Chie-Soo;Lee, Jung-Soo;Park, Jaemin
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.11
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    • pp.114-127
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    • 2016
  • The competition among nations has been extended to competition between localities, and the importance of knowledge activities in local areas is being emphasized. To contribute to the nurturing of highly qualified professionals and the development of local industry, the Korean government established the S&T-centric research universities including KAIST in 5 local areas. These S&T-centric research universities are top notch research centers and educational environments in Korea. However, it has been pointed out that their ability to act as local innovation hubs is limited. Accordingly, this study conducted an empirical analysis on the outcomes of the S&T-centric research universities by dividing them into two categories, Mode 1 and Mode 2, and comparing them with those of other general universities. It was found that the outcomes of the S&T-centric universities were higher in Mode 1, but lower in Mode 2, than those of the general universities. Furthermore, the S&T-centric universities are not connected very much to the region's specialized industries. It was difficult to find any evidence that the S&T-centric universities differ from the other universities in terms of their outcomes or activities as they were initially envisaged.

Development of expressway mode (고속도로 주행 모우드의 개발연구)

  • Park, Sun
    • Journal of the korean Society of Automotive Engineers
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    • v.6 no.1
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    • pp.63-70
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    • 1984
  • The KIER expressway mode was constructed from actual speed-versus-time traces generated by an instrumented test car driven a variety of expressways. This mode reflects the correct proportion of operation on each of the six expressways and preserves the non-steady-state characteristics of real driving. The average speed of the mode is 79.43 km/h and the mode length is 16.22 km.

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Design of a Dual-Mode Planar Antenna Using a Reconfigurable Matching Network (재구성 정합 회로를 이용한 평판형 이중 모드 안테나 설계)

  • Kim, Yoon Geon;Kay, Youngchul;Choo, Hosung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.12
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    • pp.1337-1342
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    • 2012
  • In this paper, we propose a novel reconfigurable antenna that can change the electrical shape of the matching network using RF switches of PIN diodes. The designed antenna operates at two different modes that are Mode 1 (HSDPA band, 2.1~2.2 GHz) and Mode 2(WiBro WiFi band, 2.3~2.5 GHz). The antenna is built on both sides of a polyarcylate substrate. The measured reflection coefficient shows a matching bandwidth of 547 MHz($S_{11}$ <-3 dB, 2.035~2.582 GHz) for Mode 1 and 600 MHz($S_{11}$ <-3 dB, 2.2~2.8 GHz) for Mode 2, and it shows average vertical gains of -4.4 dBi and -4.5 dBi in x-y plane, respectively.

Memory window characteristics of vertical nanowire MOSFET with asymmetric source/drain for 1T-DRAM application (비대칭 소스/드레인 수직형 나노와이어 MOSFET의 1T-DRAM 응용을 위한 메모리 윈도우 특성)

  • Lee, Jae Hoon;Park, Jong Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.4
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    • pp.793-798
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    • 2016
  • In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

Design of A Voltage-controlled Frequency Tunable Integrator and 3rd-order Chebyshev CMOS Current-mode Filter (전압제어 주파수가변 적분기 및 3차 체비세프 CMOS 전류모드 필터 설계)

  • Bang, Jun-Ho;Lee, Woo-Choun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.10
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    • pp.3905-3910
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    • 2010
  • In this paper, a 3rd-order Chebyshev current-mode filter in 1.8V-$0.18{\mu}m$ CMOS parameter is designed. The core circuit of the current-mode filter is composed with the proposed voltage-controlled frequency tunable current-mode integrator. Using the proposed current-mode integrator, the cutoff frequency of the filter can be controlled and also total power consumption can be reduced. HSPICE simulation results show the cutoff frequency of the filter is controlled between 1.2MHz and 10.1MHz, and the power consumption is 2.85mW at Vdd=1.8V.

Fabrication and Characterization of Surface Plasmon Fiber-Optic Polarizers (표면 플라즈몬 광섬유 편광기의 제작 및 특성 조사)

  • 김진하;김병윤
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.311-318
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    • 1994
  • We fabricated fiber-optic polarizers utilizing polarization selective mode coupling between the guided mode of a fiber and the surface plasmon mode supported by a thin aluminium film deposited on the polished side of a fiber. AI thin films with various thicknesses were coated onto the 633 nm, 830 nm, 1.3 fJITI single mode fibers. The maximum extinction ratio was higher than 30 dB for most of the samples and the best result was 42 dB at 90 A film thickness, with 1.3 fJITI single mode fiber. The insertion loss ranged from 0.2 dB to 1.5 dB.1.5 dB.

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Operation Mode in Sequencing Batch Reactor for Nitrogen Removal (질소제거를 위한 연속회분식 반응조의 운전방식 연구)

  • Shin, Hang Sik;Kwon, Joong Chun;Koo, Ja Kong
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.8 no.2
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    • pp.77-88
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    • 1988
  • This research investigated the effect of COD/N ratio on nitrogen removal, and the use of organics in raw wastewater as a carbon source for denitrification in SBR(Sequencing Batch Reactor) systems. Four laboratory scale reactors were operated in three modes. Only the difference between modes were; Mode I operated in aerated condition during fill while Mode II in anoxic condition and Mode III operated on two fills per cycle in anoxic condition. When COD/N ratio increased, total nitrogen removal efficiencies increased from 8.7 to 57.7 percent in Mode I, from 28.9 to 83.2 percent in Mode II and from 42.7 to 97.8 percent in Mode III, respectively. COD removal efficiencies ranged from 93 to 98 percent throughout the study. SBR operation in Mode III of feeding twice per cycle in anoxic condition was an effective operating method for nitrogen removal and nitrogen concentration in effluent can be estimated using influent COD and nitrogen concentrations.

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