• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.290-297
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• 2003

Analytical Expressions of temperature dependent breakdown voltage and on-resistance for silicon power MOSFETs are induced by employing the temperature dependent effective ionization coefficient extracted from temperature dependent ionization coefficients for electron and hole, and electron mobility in silicon. The analytical results for temperature dependent breakdown voltage are compared with experimental results for tile doping concentration, 4x10$^{14}$ cm$^{-3}$ , 1x10$^{15}$ cm$^{-3}$ , 6x10$^{16}$ cm$^{-3}$ respectively. The variations of temperature dependent on-resistance and breakdown voltage dependent ideal specific on-resistance are also compared with the ones reported previously. Good fits with the experimental results ate found for the breakdown voltages within 10% in error for the temperature in the range of 77~300K at each doping concentration.

• Journal of Biosystems Engineering
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• v.9 no.1
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• pp.34-45
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• 1984

우리가 소비하는 식량의 확보는 단위 수량의 증대 뿐만 아니라, 생산이후 수확, 조제가공 및 건조 저장과정에서의 곡물 손실 방지 또는 감소로 인한 간접 증산으로도 이룩될 수 있는데, 현재 우리나라에서는 수확 이후의 곡물 손실량이 전체 생산량의 약 11%에 달하는 것으로 추정되고 있다(12). 여기서 식량의 중요 손실원으로 기계적 원인과 곡물 자체의 특성에 의한 두가지 요인을 고려할 수 있다. 따라서 쌀의 물리적 특성이 규명되면 각 과정에서 발생되는 기계적 손실을 더욱 줄일 수 있을 것이다. 이러한 중요성에도 불구하고 지금까지 우리나라에서는 벼의 물리적 특성에 관한 연구가 거의 없는 실정이다. 특히 우리나라에 많이 보급되고 있는 통일계 품종은 관행 품종에 비하여 물리적 특성이 크게 다르다고 인정되고 있다. 따라서 본 연구는 벼와 현미의 특성을 기계적 및 유동학적 측면에서 함수율 및 품종별로 규명하여, 농업기계의 설계 및 작동조건, 그리고, 조제가공의 기초적 자료로 제시하고자 하였다. 실험 결과를 요약하면 다음과 같다. 1. 준 정하중의 압축시험에서 함수율은 벼와 현미의 기계적 및 유동학적 특성에 큰 영향을 미쳤으며, 특히 높은 함수율에서는 점성적인 특성이, 낮은 함수율에서는 탄성적인 특성이 나타났다. 2. 벼와 현미의 함수율이 24-12% (습량기준)의 범위에 있을 때 현미의 항복점은 2.0-7.2kg, 벼의 항복점은 2.5-7.6kg을 나타냈으며, 전반적으로 현미보다 벼의 항복점이 0.5-1kg 더 높았다. 또한 함수율이 18%(습량기준) 이하에서는 일반계 품종이 통일계 품종보다 압축 강도가 더 높았으나 18% 이상의 높은 함수율에서는 더 낮게 나타났다. 그리고 낮은 함수율에서 현미의 항복점은 현미 두께 대 길이의 비의 증가에 따라 직선적으로 감소하였다. 3. 현미의 최대압축 강도는 함수율 24-12%(습량기준)의 범위에서 2.94-10.4kg을 나타냈으며, 14% 수준의 낮은 함수율에서는 현미의 최대 압축 강도는 5.66-11.4kg으로 품종간에 높은 유의성이 있었다. 따라서 벼와 현미의 크기가 최대 압축 강도에 큰 영향을 미친 것으로 사료된다. 4. 함수율 12-24%(습량기준)의 범위에서, 현미의 항복점에서 변형은 0.20-0.40mm를 나타냈으며, 함수율이 약 17%일 때 최소치를 보였다. 벼의 항복점에서 변형은 0.20-0.41mm 였으며 통일계 품종이 일반계 품종보다 변형이 더 많이 생겼다. 5. 함수율 24-12%(습량기준)의 범위에서, 일반계 품종의 레질리언스(resilience)는 $0.142-0.603kg{\cdot}mm$, 통일계 품종의 레질리언스는 $0.229-0.601kg{\cdot}mm$로 나타났다. 함수율이 19% 이하에서는 일반계 품종이 통일계 품종보다 더 높게 나타났으며 19% 이상에서는 반대 현상이 일어났다. 또한 14%의 낮은 함수율에서, 현미의 레질리언스는 현미 두께 대 길이의 비의 증가에 따라 감소하였다. 벼의 레질리언스는 함수율의 감소에 따라 증가했으며, 그 범위는 $0.285-0.850kg{\cdot}mm$이었다. 6. 현미의 터프니스(toughness)는 함수율 24-12%(습량기준)의 범위에서 $0.841-2.795kg{\cdot}mm$이었다. 또한 일반계 품종과 통일계 품종 사이에는 유의성이 없었으나. 품종간에는 높은 유의성이 있었다. 7. 현미의 탄성계수와 스티프니스(stiffness)는 함수율의 감소에 따라 직선적으로 증가하였다. 현미의 함수율이 24-12%(습량기준)의 범위에 있을 때 탄성계수는 $7-40kg/mm^2$, 스티프니스는 8-34kg/mm를 나타냈다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.6391-6396
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• 2015

In order to investigate characteristics of the von Mises yield criterion under 2 dimensional stress condition, two cases of plane strain were studied. One of which was for zero elastic strain and the other was for zero plastic strain increment. Yield functions for the plane strain condition for zero elastic strain and for the plane stress condition were represented as ellipse and the two yield functions were compared by ratios of major axis, minor axis and eccentricity and it was seen that the ratio of minor axis was the same between the two cases and the ratios of major axis and eccentricity were functions of Poisson's ratio. Region of elastic behavior obtained from considering plane strain condition of zero elastic strain increases as the Poisson's ratio increases. Yield function for plane strain obtained from considering zero plastic increment and associate flow rule was displayed as straight line and the region of elastic behavior was greater than that for the case of plane stress.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.672-677
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• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.4
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• pp.917-921
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• 2013

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.4D
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• pp.571-576
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• 2011

In general, conventional road pavements are designed under the assumption that the shear strength of geomaterials are under saturated state. In reality, however, most of the pavement geomaterials exists under the unsaturated state. To deal with this gap between saturated and unsaturated conditions, in this paper, unsaturated shear strength was estimated using the results from the triaxial compression test and soil-water characteristics curves. Then, yield loads were assessed using 2-Dimensional finite element method with the selected nonlinear elastic model and the Mohr-Coulomb yield criteria. In addition, various unsaturated condition and surface layer effects on the yield load of granular materials were identified. Therefore, the results demonstrated would provide a possibility to estimate bearing capacity of paved or unpaved roads using unsaturated soil mechanics.

• Geotechnical Engineering
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• v.12 no.2
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• pp.95-106
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• 1996

In this study, a constitutive model which can describe the anisotropic and plastic behaviors of natural cohesive soils, was developed based on anisotropic bounding surface theory. The model was fomulated by the concepts of the improved anisotropic bounding surface function, nonassociated flow rule with new plastic potential function, anisotropic hardening rule, and new mapping rule governing the plastic behavior inside bounding sutraface. Comparing with the results of Ku consolidation and triaxial shearing tests, the predictions by the proposed model agree quite well with real soil responses.