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Analytical Expressions of Temperature Dependent Breakdown Voltage and On-Resistance for Si Power MOSFETs  

정용성 (서라벌대학 디지털전기정보학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.5, 2003 , pp. 290-297 More about this Journal
Abstract
Analytical Expressions of temperature dependent breakdown voltage and on-resistance for silicon power MOSFETs are induced by employing the temperature dependent effective ionization coefficient extracted from temperature dependent ionization coefficients for electron and hole, and electron mobility in silicon. The analytical results for temperature dependent breakdown voltage are compared with experimental results for tile doping concentration, 4x10$^{14}$ cm$^{-3}$ , 1x10$^{15}$ cm$^{-3}$ , 6x10$^{16}$ cm$^{-3}$ respectively. The variations of temperature dependent on-resistance and breakdown voltage dependent ideal specific on-resistance are also compared with the ones reported previously. Good fits with the experimental results ate found for the breakdown voltages within 10% in error for the temperature in the range of 77~300K at each doping concentration.
Keywords
Analytical expressions; temperature dependent; breakdown voltage; on-resistance; silicon power MOSFETs; effective ionization coefficient; electron mobility; doping concentration;
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