• Journal of Adhesion and Interface
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• v.24 no.1
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• pp.36-40
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• 2023

A van der Waals material refers to a material having a two-dimensional layered structure composed of van der Waals bonds with weak interlayer bonding. The research based on heterojunction structures using such van der Waals two-dimensional materials has been steadily studied since the discovery of graphene. Herein, this paper reports a van der Waals heterojunction -based field-effect transistor device based on monolayer single crystalline MoSe2 grown by atmospheric pressure chemical vapor deposition. We found that MoSe₂ grown under optimized process conditions did not have atomic-level defects and the transistor devices incorporating MoSe₂ also showed excellent characteristics.

• Progress in Superconductivity
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• v.13 no.1
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• pp.47-51
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• 2011

Mono-atomic-layer graphene is an interesting system for studying the relativistic carrier transport arising from a linear energy-momentum dispersion relation. An easy control of the carrier density in graphene by applying an external gate field makes the system even more useful. In this study, we measured the Josephson current in a device consisting of mono-layer graphene sheet sandwiched between two closely spaced (~300 nm) aluminum superconducting electrodes. Gate dependence of the supercurrent in graphene Josephson junction follows the gate dependence of the normal-state conductance. The gate-tunable and relatively large supercurrent in a graphene Josephson junction would facilitate our understanding on the weak-link behavior in a superconducting-normal metal-superconducting (SNS) type Josephson junction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.293-293
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• 2014

The applicability of graphene has been demonstrated in the electronic fields. But, high performance of graphene is limited by the contact resistance (Rc) at the metal-graphene interface. Recently, Rc was found to be improved by forming edge-contacted graphene via theoretical simulation. Based on the differences between the surface and edge contacts at the M-G interface, we demonstrate "edge-contacted" graphene through the use of a controlled plasma processing technique that generates the edge structure of the bond and significantly reduces the contact resistance. The contact resistance attained by using pre-plasma processing was of $270{\Omega}{\cdot}{\mu}m$. Mechanisms of pre-plasma process leading to low Rc was revealed by SEM and Raman spectroscopy. In the end, controlled pre-plasma processing enabled to fabricate CVD-graphene field effect transistors with an enhanced adhesion and improved carrier mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.118-118
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• 2015

플렉서블 기판을 기반으로 하는 휴대용 기기는 다양한 형태로 가공이 가능하고 가벼워 휴대가 용이하며 충격에 강하여 내구성이 좋은 장점을 가지고 있으나 플렉서블 전극 개발이 어려운 문제가 있다. 플렉서블 전극으로 그래핀, 은나노선, 금속메쉬 등의 다양한 재료, 구조에 대한 연구가 진행되고 있으며 특히 은나노선 전극은 공정이 단순하고 투과도 및 전도도가 비교적 우수하녀 가장 강력한 후보재료로 알려져 있다. 그러나 은나노선은 표면거칠기가 매우 크고 헤이즈가 발생하여 OLED 디스플레이용 전극으로 응용시 화면의 선명도가 떨어지며 은나노선 네트워크 형성시 은나노선간의 접촉저항이 증가하는 문제를 가지고 있다. 이러한 문제를 해결하기 위해 최근 산화그래핀을 적용하여 은나노선의 투과도, 전도도, 표면거칠기를 개선하는 연구가 진행되고 있다. 본 연구에서는 은나노선과 산화그래핀 나노복합체를 형성하고 플렉서블 기판에 전사하는 공정방법을 통해 투명전극을 형성하였고 산화그래핀이 포함되지 않은 전극과 비교하여 전극의 성능이 향상됨을 확인하였다. 주사전자현미경 측정을 통해 플렉서블 기판에 포함된 산화그래핀-은나노선 전극의 구조적 특성을 조사하였고 면저항측정을 통해 산화그래핀 처리로 인해 전기적 특성이 개선되는 결과를 확인하였다. 전도도 개선의 원인을 조사하기 위해 라만, XPS, 투과도 측정결과를 분석하여 그래핀에 포함된 pyridinic 질소가 감소하고 quaternary 질소가 증가하며 이로 인해 defect sites의 수가 감소하는 결과를 확인하였다. 산화그래핀과 은나노선의 접합부분에서 산화그래핀의 quaternary 질소가 증가하고 산화그래핀에 전하밀도를 증가하여 전도도를 향상하였다. 투과도 측정을 통해 은나노선의 가로방향 플라즈몬 공명 흡수가 산화그래핀 처리에 의해 감소한 결과를 확인하였다. 산화그래핀-은나노선 나노복합체의 전도도 향상 원인에 대한 연구는 은나노선의 플렉서블 전극 응용을 가속화하고 잠재적인 응용분야를 확대하기 위한 원천지식을 제공할 것이다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.6
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• pp.41-46
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• 2023

Design of W-band TE10 to TEM mode converter for radial power combiner is proposed in this paper. The proposed structure is used with generally available pin to realize TEM mode and is designed to convert TE10 to TEM mode gradually using 2-step impedance transformer and back short. The pin of proposed mode converter is well bonded to the housing so that environment conditions such as vibration or shock are not affected. The proposed mode converter, in a back-to-back configuration, has less than 1.55 dB insertion loss and more than 10 dB return loss from 92.5 GHz to 97.7 GHz. Proposed converter is expected compact radar and various applications requiring for high power and stable environment conditions.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• The Korean Journal of Physiology
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• v.24 no.1
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• pp.1-13
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• 1990

The effects of electrolytes, adenosine, ATP, 5-hydroxytryptamine (5-HT, serotonin) and ketanserin on the inhibitory junction potentials (IJPs) were investigated to clarify the interactions of these drugs with the neurotransmitters released from non-adrenergic, non-cholinergic nerves in the antrum of guinea-pig stomach. Electrical responses of antral circular muscle cells were recorded intracellularly using glass capillary microelectrode filled with 3 M KCI. All experiments were performed in Tris-buffered Tyrode soluition which was aerated with 100% $O_{2}$ and kept at $35^{\circ}C$. The results obtained were as follows: 1) Inhibitory junction potential (IJP) was recorded in antral strip, while excitatory junction potential (EJP) was recorded in fundic strip. 2) IJP recorded in antral strip was not influenced by atropine $(10^{-6}\;M)$ and guanethidine $(5{\times}10^{-6})$. 3) The amplitude of IJP increased in high $Ca^{2+}$ solution, while that of IJP decreased in high $Mg^{2+}$ solution or by $Ca^{2+}$ antagonist (verapamil). Apamin, $Ca^{2+}$-activated $K^{+}$ channel blocker blocked IJP completely. 4) ATP and adenosine decreased the amplitude of IJP. 5) 5-HT decreased the amplitude of IJP with no change of the amplitude of slow waves, while ketanserin (5-HT type 2 blocker) decreased the amplitude of slow waves markedly with no change in that of IJP. From the above results, the following conclusions could be made. 1) IJP recorded in antral strip is resulted from neurotransmitters released from non-adrenergic, non-cholinergic nerves. 2) An increase in the concentration of external $Ca^{2+}$ enhances the release of neurotransmitters from non-adrenergic, non-cholinergic nerves which activate the $Ca^{2+}$-dependent $K^{+}$ channel.

• Korean Journal of Plant Tissue Culture
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• v.25 no.2
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• pp.115-118
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• 1998

This experiments were carried out to determine the optimum concentrations of plant growth regulators for the direct embryogenesis from the cotyledon culture of Paeonia lactiflora Pall. Zygotic embryos rescued from true seeds were developed abnormally in the medium containing ABA. But somatic embryogenesis from cotyledons of abnormal seedlings was induced more effectively. Also the somatic embryogenesis from cotyledons was promoted in the medium containing ABA. The frequency of embryogenesis was maximum(59.9%) from the cotyledons cultured on MS medium containing 0.5 mg/L ABA on which the frequency of somatic embryos with two cotyledons was 22.6%.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.140-144
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• 2014

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.27 no.4
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• pp.313-320
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• 2014

A tensegrity structure consists of a set of continuous cables in tension and a set of discontinuous struts in compression. The tensegrity structure can be classified into self-stressed and pre-stressed pin-jointed structure. A key step in the design of tensegrity structures is the determination of their equilibrium configuration, known as form-finding. In this paper, three effective methods are presented for form-finding of tensegrity structures. After performing form-finding process, a set of force density and corresponding topology results can be obtained. Then the force density method combined with a genetic algorithm is adopted to uniquely define a single integral feasible set of force densities. Numerical examples are presented that demonstrate the excellent performance of the algorithms.