• Journal of the Korean Society of Clothing and Textiles
• /
• v.36 no.10
• /
• pp.1117-1124
• /
• 2012

This study was a preliminary study to investigate the influence of surface morphology and characteristics on the self-cleaning of substrates. PI film was treated by $O_2$ plasma to modify the surface; in addition, AFM and Fe-SEM were employed to examine the morphological changes induced on a PI film treated by $O_2$ plasma and surface energies calculated from measured contact angles between several solutions and PI film based on the geometric mean and a Lewis acid base method. The surface roughness of PI film treated by $O_2$ plasma increased with the duration of the $O_2$ plasma on PI film due to the increased surface etching. The contact angle of film treated by $O_2$ plasma decreased with the increased treatment time in water and surfactant solution; in addition, the surface energy increased with the increased treatment times largely attributed to the increased portion on the polar surface energy of PI film. The coefficient of the correlation between surface roughness and surface polarity such as contact angle and surface energy was below 0.35; however, it was over 0.99 for the contact angle and surface energy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.273-273
• /
• 2012

최근 스마트 윈도우, 자가세정(Self-Cleaning), 김서림방지(Anti-Fogging), 디스플레이 표시장치, 대전방지 코팅 등 다각적으로 활용이 가능한 PTFE (Ploytetrafluoroethylene)를 Sol-gel, Sputtering, Spin-Coating, CVD (Chemical vapor deposition)방법을 이용하여 낮은 표면에너지와 나노사이즈의 표면 거칠기를 가지는 $150^{\circ}$ 이상의 초-발수성 표면에 대한 많은 연구가 진행되고 있다. 본 실험에서는 영구자석을 이용한 고밀도 플라즈마로 높은 점착성과, 균일한 박막 및 대 면적 공정이 가능한 RF-magnetron sputtering방법을 이용하여 Plasma etching으로 표면적의 거칠기와 낮은 표면에너지를 만든 뒤, 발수특성을 가진 PTFE를 증착하여 접촉각 변화와 구조적 및 광학적 특성을 측정하였다. AFM (Atomic Force Microscope)측정결과 100 w에서 가장 높은 1.7 nm의 RMS(Root mean square)값이 측정되었고, 접촉각 측정결과 Plasma etched glass는 25 w에서 125 w로 증가함에 따라 친수성을 나타내었으며, 100 w에서 가장 낮은 $15^{\circ}$의 접촉각을 나타내었다. PTFE박막을 증착하였을 때는 100 w에서 $150^{\circ}$의 초발수 특성을 나타내었고, 투과율 측정 결과 85%이상의 높은 투과율을 나타내었다. Plasma etching을 이용한 PTFE 발수 특성은 비가 오면 자동으로 이물질이 씻겨 내리는 자동차 유리등의 개발이 가능하고, 높은 투과율이 요구되는 액정표시장치(LCD)같은 차세대 대형 디스플레이의 표면 코팅에 사용이 가능 할 것이라 사료된다. 본 연구는 중소기업청에서 지원하는 2011년도 산학연 공동기술개발 지원사업의 연구수행으로 인한 결과물임을 밝힙니다.

• Proceedings of the KIPE Conference
• /
• 2013.07a
• /
• pp.51-52
• /
• 2013

본 논문에서는 박막형 태양전지 및 LCD 제조공정에서 증착 공정 후 챔버 내부에 쌓이는 Si(실리콘)을 화학적으로 세정하기 위한 F(불소) RADICAL을 공급하는 원격 고밀도 플라즈마를 발생시키기 위한 고출력 Generator에 대해 소개하고자 한다. 개발되어진 Generator는 입력 직류전원을 공유하여 7kW급 단일 Power Amp Module의 상호결합 및 전력분담에 대한 편차 극복을 위한 기술과 고조파 저감비가 우수한 대전력 필터를 구현하였고, 크기 및 부피의 축소를 위하여 필터의 Q Factor의 극대화 기술이 적용되어졌다. 개발된 400kHz 30kW Generator는 NF3 60리터의 대용량 Remote Plasma Source의 리액터를 구동시킬 수 있으며, 38kW급 DC Link, 7kW급 Power Amp module, LC 필터, Controller로 구성되어 진다. 개발된 장치는 실제 플라즈마 공정에서 시험 평가한 결과를 통해 검증할 수 있었다.

• Proceedings of the Korean Society of Developmental Biology Conference
• /
• 2003.10a
• /
• pp.137-137
• /
• 2003

난자의 체외성숙 및 체외배양에는 일반적으로 동물의 혈청을 기본배양액에 5-10% 정도 첨가한 배양액을 사용하고 있다. 그러나, 혈청으로부터 바이러스, 세균, 마이코 플라즈마 등에 오염될 가능성이 있기 때문에, 본 실험에서는 완전 무혈청 배양액에서 난자의 성숙, 배발생, 세포수, 동결성을 검토하였다. 도축된 한우의 난소로부터 채취한 난자는 선별하여 TCM199+10% FBS와 IVMD 101 배양액에서 22~24시간 동안 체외성숙시킨 후, IVF 100(일본, 펩티트연구소)으로 2회 세정한 후, 각각의 배양액 50${\mu}\ell$ 소적에 5개씩 5~6 시간 수정시켰다. 체외수정한 수정란은 TCM 199+10% FBS, IVMD 101, IVD 101 배양액에서 7~8일간 배양하여 배발생율을 조사하였다. 발생된 배반포의 일부는 세포수를 조사하였고 나머지 배반포는 1.8M EG로 동결하였다. (중략)

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.7
• /
• pp.315-318
• /
• 2005

The effect of plasma cleaning was examined on package delamination phenomena in the integrated circuit (IC) packaging process. Without plasma cleaning, delamination was observed for all three experimental treatments applied after the packaging step, which include bake of If, reflow, and bake of If followed by reflow However, no delamination was observed when the plasma cleaning was performed before and after the wire bonding step. Plasma cleaning was found to be a critical step to improve the reliability of the package by reducing the possibility of contact failure between die pad and bonding wire.

• Journal of the Korean Institute of Gas
• /
• v.15 no.3
• /
• pp.74-78
• /
• 2011

$BF_3$ gas has been used for semiconductor manufacturing process and applied in plasma etching, chemical vapor deposition, chamber cleaning processes etc,. $BF_3$ provides Boron and acts as a p-type doping in electrode in semiconductor. In this study, we investigate thermaldecomposition of alkali-boron complexes and suggest a simple way to produce $BF_3$ from $NaBF_4$ and $KBF_4$.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.4
• /
• pp.63-69
• /
• 1994

The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

• Proceedings of the KIEE Conference
• /
• 2006.04a
• /
• pp.282-284
• /
• 2006

UV lamp systems have been used for cleaning of display pannels of TFT LCD or Plasma Display Pannel (PDP). However, the needs for high efficient cleaning and low cost made high voltage plasma cleaning techniques be developed and improved. In this paper, 3kW high voltage plasma power supply system was developed for LCD cleaning. The 3-phase input voltage is rectified and then inverter system is used to make a high frequency pulse train, which is rectified after passing through a high-power transformer. Finally, bi-directional high voltage pulse switching circuits are used to generate the high voltage plasma.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.242-243
• /
• 2015

Fault detection using optical emission spectra with modified K-means cluster analysis and principal component anal ysis are demonstrated for inductive coupl ed pl asma cl eaning processes. The optical emission spectra from optical emission spectroscopy (OES) are used for measurement. Furthermore, Principal component analysis and K-means cluster analysis algorithm is modified and applied to real-time detection and sensitivity enhancement for fluorocarbon cleaning processes. The proposed techniques show clear improvement of sensitivity and significant noise reduction when they are compared with single wavelength signals measured by OES. These techniques are expected to be applied to various plasma monitoring applications including fault detections as well as chamber cleaning endpoint detection.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.2
• /
• pp.35-38
• /
• 2008

This study shows the improvement of PR-Ashing rates in semi-conductor process using Atmospheric Plasma. Taguchi method is used to improve Ashing rates of photo-resist that is spread on the surface of a wafer. Improvement of Ashing rates is acquired through the decision of the effective factors and suitable combination of the factors. The results show the contribution rate of each factor and the effectiveness of Plasma for PR-Ashing process in this system.