• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.127-130
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• 2001

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.115-116
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• 2005

Si nanowires (NWs) were fabricated in vacuum furnace by using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for target, and any catalytic materials are not used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2130-2132
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• 1999

This paper is research for the practicability of instrument which can apply to the transformer on the spot with the criteria of insulation oil with the method of measuring the volume of $H_2O$ in the insulation oil by playing insulation oil with the significant role for precaution diagnosis on breakdown of transformer among power system into Nd:YAG laser.

• 해양환경안전학회지
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• 제3권2호
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• pp.13-21
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• 1997

This paper describes the effectiveness of laser pulse shaping in eliminating weld defects such as porosity, cracks and undercuts in pulsed Nd:YAG Laser welding. A large porosity was formed in a keyhole mode of deep penetration weld metal of any stainless steel. Solidification cracks were present in Type 303 with about 0.3%s. The conditions for the formation of porosity were determined in further detail in Type 316. With the objectives of obtaining a fundamental knowledge of formation and prevention of weld defects, the fusion and solidification behavior of a molten puddle was observed during laser spot welding of Type 310S. through high speed video photographing technique. It was deduced that cellular dendrite tips grew rapidly from the bottom to the surface, and consequently residual liquid remained at the grain boundaries in wide regions and enhanced the solidification cracking susceptibility. Several laser pulse shapes were investigated and optimum pulse shapes were proposed for the reduction and prevention of porosity and solidification cracking.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• 전기화학회지
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• 제15권3호
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• pp.181-189
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• 2012

ND-YAG 펄스 레이저를 사용하여 밀폐 반응기에서 가스상 $Ge(CH_3)_4$ (tetramethyl germanium, TMG)을 광분해하여 Ge (germanium) 나노입자를 합성하는 새로운 합성법을 개발하였다. 나노입자의 크기는 간단히 충돌이완가스를 사용하여 5-100 nm로 조절할 수 있었다. $Ge_{1-x}Si_x$ 합금 나노입자는 TMG와 $Si(CH_3)_4$ (tetramethyl silicon, TMS) 혼합가스를 광분해하여 합성하였으며, 이때 반응기 안의 가스 혼합비율에 따라 나노입자의 조성을 조절할 수 있었다. 합성된 나노입자는 얇은 탄소층(1-2 nm) 에 싸여있고, 안정한 콜로이드 용액형태로 잘 분산되어 있다. 합성된 Ge 나노입자와 Ge-RGO (reduced graphene oxide) 하이브리드 구조체 모두 리튬이온전지 특성이 50 사이클 이후 각각 800, 1,100 mAh/g의 높은 방전용량을 갖는 것을 확인하였고, 이 방법은 이전의 Ge 나노입자 합성법과 비교하여 높은 수득률, 우수한 재현성, 성분조절의 용이 하므로, 고성능 리튬 전지의 개발을 위한 음극소재로 기대된다. 이와 같은 Ge 나노입자의 새로운 대량 합성법은 고성능 에너지 변환 소재 실용화에 기여할 것으로 예상된다.

• Journal of Welding and Joining
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• 제18권2호
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• pp.213-213
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7NO1 spot-welded by pulse Nd: YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed: center line crack($C_{C}$), diagonal crack($C_{D}$), and U shape crack($C_{U}$). Also, HAZ crack($C_{H}$), was observed in the HAZ region, furthermore, mixing crack($C_{M}$), consisting of diagonal crack and HAZ crack was observed.White film was formed at the hot crack region in the fractured surface after it was immersed to 10%NaOH water. In the case of A5083 alloy, white films in C crack and $C_D crack region were composed of low melting phases, Fe₂Si$Al_8$ and eutectic phases, Mg₂Al₃ and Mg₂Si. Such films observed near HAZ crack were also consist of eutectic Mg₂Al₃. In the case of A7N01 alloy, eutectic phases of CuAl₂, $Mg_{32}$ (Al,Zn) ₃, MgZn₂, Al₂CuMg and Mg₂Si were observed in the whitely etched films near $C_{C}$ crack and $C_{D}$ crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Si in the case of A7N01 aooly, respectively.The $C_{D}$ and $C_{C}$ cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of $C_{M}$ crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The $C_{U}$ crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification. (Received October 7, 1999)

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2009년도 공동학술대회
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• pp.467-470
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• 2009

외부적으로 직렬 및 병렬로 접속된 50개의 DSSC로써 새로운 8 V DC 전원을 만들었다. 한 개의 DSSC는 $5.2{\times}2.6$ cm(유효면적 8 $cm^2$) 약 4.2%의 효율을 보이며, 전기화학적 임피던스 분석법 및 I-V 곡선으로 특성이 분석되었다. 또한 펄스형 Nd:YAG 레이저 빔을 활용하여 투명 도전층을 식각함으로써, 최종효율 약 45%를 달성하였다.