Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.115-116
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- 2005
Synthesis of silicon nanoeires by pulsed laser deposition in furnace
펄스레이저 증착법을 이용한 실리콘 나노와이어 합성
- Jeon, Kyung-Ah (Yonsei University) ;
- Son, Hyo-Jeong (Yonsei University) ;
- Kim, Jong-Hoon (Yonsei University) ;
- Lee, Sang-Yeol (Yonsei University)
- Published : 2005.11.10
Abstract
Si nanowires (NWs) were fabricated in vacuum furnace by using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for target, and any catalytic materials are not used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.