• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.05a
• /
• pp.869-871
• /
• 2012

In this paper, we make silicon photodiodes for the detection of pulsed radiation that affects electronics devices and study the output characteristics of photodiodes using circuit design. We conducted the simulation for pulse sensing circuit and experimented the photodiode output characteristics using a high luminance light emitting diode. The results can be used for the design of the input sensor that is trigger of additional module for protecting a electoronics circuit from high energy pulse radiation.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.10
• /
• pp.2329-2334
• /
• 2012

In this paper, we performed a study of damage assessment model development to analyze the initial nuclear pulse radiation damage to semiconductor devices for military weapon systems. At first we modeled(M) the nuclear pulse radiation and diode device, and simulated(S) the output characteristics of the device to the input. Then the manufactured diodes which had the same characteristics with the modeled one were irradiated to the similar pulsed type radiation and their output signals were measured simultaneously. Error between the M & S results and the measured values of the analysis was 22.9%. Through the error value we could confirm that the damage assessment model simulated the TREE effects with a quite accuracy.

• Proceedings of the KIEE Conference
• /
• 2004.07d
• /
• pp.2622-2624
• /
• 2004

본 논문은 원자력 발전소의 원자로 내 고준위 방사선 환경에서의 방사선량 측정에 SiC 다이오드를 이용하여 발생하는 펄스를 관측, 방사선량을 측정하는 기술에 대한 연구이다. 일반적으로 고준위 방사선 환경에서는 방사선측정 센서가 높은 방사선 에너지로 인해 손상되기 쉽다. 이러한 이유로 고준위 방사선 환경에서 내성이 강한 SiC 다이오드를 사용하였다. 방사선 입자를 하나의 에너지로 취급하면 방사선 입자가 센서로 입사하는 경우, 센서에는 방사선 에너지에 따라 약한 에너지가 유기된다. 유기된 에너지는 센서에서 전류의 형대로 출력되면, 이 전류를 신호처리하면 펄스의 형태로 성형이 가능하다. 시간당 성형된 펄스 수는 센서가 받은 방사선량에 비례하며 방사선이 많은 곳에서는 직류의 형태가 된다. 본 논문에서는 약한 전류형태로 출력되는 신호를 성형하여 디지털 신호처리를 하기 위한 펄스 형태로 성형하는데, 필요한 일련의 기술적인 사항에 관하여 연구하였다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.12
• /
• pp.3079-3084
• /
• 2014

When an integrated circuit device is burned out under high-intense radiation and device-level simulation that usually requires manufacturer's proprietary information is not available, experimental conformation of a failure mechanism is often the only choice. To distinguish Latchup from other causes experimentally, a new combination of multiple techniques have been developed and demonstrated. Power supply circumvention, hot-spot monitoring using an infrared camera, and supply current monitoring techniques were implemented for the conformation of the Latchup.

• Journal of Radiation Protection and Research
• /
• v.20 no.2
• /
• pp.85-95
• /
• 1995

Radiation measuring system using wireless communication method with single channel has been diveloped and tested. In this system, radiation signals from GM tube are transformed into digital pulses in pulse processing circuit and modulated in FSK (frequency shift keying) circuit for digital communication and then wirelessly transmitted to a receiving unit. The digital pulses received are then demodulated in FSK circuit and converted into radiation dose/dose rate in the data acquisition unit to display on the screen of a personal computer. The performance of this system was evaluated by using both a pulse generator and a standard radiation source(Cs-137). In both cases, digital pulses with 5V were observed in pulse processing circuit without distortion of their shape through wireless communication system. The experimental results of radiation measurement by this system after several test-irradiation of GM detector to a standard radiation source(Cs-137), showed good agreement with irradiation dose rate within 10% difference, and proved that this system could be effectively utillized as radiation measuring instrument. It is expected that this wireless radiation measuring system developed for the first time in Korea, can be used as a radiation monitor as well as a personal dosimeter if we can further improve this system to adopt wireless multichannel communication system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.05a
• /
• pp.1020-1022
• /
• 2013

In this paper, proposed peak detector for the measurement of pulse radiation dose. The speed of the pulse radiation signal is the between a few ns and tens ns. Therefore, it is difficult to measure peak voltage. Peak Detector maintains the peak voltage generated from the sensor for a few ms and the converted signals can be easily measured using the ADC. The peak detector simulation results peak value remained of more than 1ms. Pulse radiation irradiation test results, a dose of $1.95{\times}10^6rad/s$ was measured.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2016.05a
• /
• pp.775-777
• /
• 2016

In this paper presents an analysis of pulsed radiation effects of unit devices. Unit devices are the nMOSFET, pMOSFET, NPN Transistor and those fabricated by the 0.18um CMOS process. Pulsed radiation test results in nMOSFET, the photocurrent of tens nA was generated in $2.07{\times}10^8rad(si)/s$. For the pMOSFET, a photocurrent generation was not observed in $3{\times}10^8rad(si)/s$. For the NPN transistor, the photocurrent was generated with about 1uA. Therefore, the MOSFET must be used than BJT transistor when radhard IC design.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1698_1699
• /
• 2009

핵폭발 등에서 방출되는 과도펄스(Transient pulse) 형태의 방사선이 반도체 소자에 조사되면 소자 내부에서는 짧은 시간에 다량의 전하가 생성된다. 이 전하들이 일정방향으로 증폭된 광전류가 소자의 고장과 오동작을 유발하거나 극단적으로 소진(Burn out)되는 원인이 된다. 본 연구에서는 과도방사선 펄스가 입사하였을 때 pMOSFET 소자 내에 생성되는 전자 정공 쌍(EHP)으로 인해 형성되는 광전류가 소자의 방사선 피해로 나타나는 과정 및 영향을 연구하기 위해 반도체 공정 시뮬레이터를 이용해 전하들의 거동과 광전류 크기를 시뮬레이션하고, 전자가속기에서 실측시험을 병행하였다. 가속기 주변의 전자장을 인한 큰 잡음으로부터 가속기 펄스신호에 의해 pMOSFET에서 발생된 소신호의 광전류를 측정하기 위해서 정밀 신호처리 회로를 구성하였다. 시뮬레이션과 실측시험에서의 결과 비교/분석에서 두 광전류 파형은 유사한 형태를 확인할 수 있었다.

• Proceedings of the KAIS Fall Conference
• /
• 2011.12b
• /
• pp.660-663
• /
• 2011

우주방사선이나 과도펄스(Transient Radiation) 형태의 감마 방사선이 반도체에 조사되면 소자 내부에서 짧은 시간에 다량의 전하가 생성된다. 이 전하들과 증폭된 과전류는 소자의 고장(Upset, Latchup)과 오동작을 유발시키게 되고 나아가 전자부품이 소진(Burnout)되는 직접적인 원인이 된다. 본 연구에서는 이러한 핵폭 방출 과도방사선에 대한 전자부품/장비의 내방사선관련 기초연구로 군전자부품의 감마-과도방사선에 대한 피해분석 시험을 수행하고 나아가 과도방사선 방호기술 체계구축의 필요성에 대해 논하였다. 과도펄스 방사선시험은 군용으로 분류된 반도체 칩을 대상으로 포항 전자빔가속기를 사용하였다. 핵폭발 방출 과도방사선을 모사하기 위해 감마선 변환장치를 MCNP 설계를 통해 제작하고 단일모드의 마이크로초 단위 감마펄스 방사선을 방출시켜 시험대상 칩을 부착한 시험보드에 조사하는 과정으로 실험을 진행하였다. 온라인 고속 측정장치를 통한 전자소자의 과도방사선시험에서 다양한 피해현상을 측정할 수 있었고, 열상카메라 촬영을 통하여 과열상태를 관측함으로써 피해현상의 검증과 더불어 소진현상으로의 전개 가능성을 확인하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.05a
• /
• pp.1023-1026
• /
• 2013

The electronic equipment which was exposed to high level pulsed radiation is damaged as Upset, Latchup, and Burnout. Those damages has come from the instantaneous photocurrent from electron-hole pairs generated in itself. Such damages appeared as losses of power in military weapon system or of blackout in aerospace equipment and eventually caused in gross loss of national. In this paper, we have implemented a RDC(Radiation detection and control module) as part of the radiation protection technology of the electronic equipment or devices from the pulsed gamma radiation. The RDC which is composed of pulsed gamma-ray detection sensor, signal processors, and pulse generator is designed to protect the important electronic circuits from the pulse radiation. To verify the functionality of the RDC, LM118s which had damaged by the pulse radiation were tested. The test results showed that the test sample applied with a RDC was worked well in spite of the irradiation of the same pulse radiation. Through the experiments we could confirm that the radiation protection technology implemented with RDC had the functionality of radiation protection to the electronic devices.