Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2016.05a
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- Pages.775-777
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- 2016
The analysis on the Pulsed radiation effect for semiconductor unit devices
반도체 단위소자의 펄스방사선 영향분석
- Jeong, Sang-hun (Korea Atomic Energy Research Institute) ;
- Lee, Nam-ho (Korea Atomic Energy Research Institute) ;
- Lee, Min-woong (Chonbuk National University)
- Published : 2016.05.25
Abstract
In this paper presents an analysis of pulsed radiation effects of unit devices. Unit devices are the nMOSFET, pMOSFET, NPN Transistor and those fabricated by the 0.18um CMOS process. Pulsed radiation test results in nMOSFET, the photocurrent of tens nA was generated in
본 연구에서는 반도체 집적회로에 사용되는 단위소자인 nMOSFET, pMOSFET, NPN 트랜지스터를 0.18um 반도체공정으로 제작하고 펄스방사선 영향 분석을 수행하였다. 펄스방사선 조사시험 결과 nMOSFET의 경우