• Journal of IKEEE
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• v.14 no.2
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• pp.1-8
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• 2010

In this paper, Green Mode Power IC is designed to reduce the standby power. The proposed and designed IC works for the Switch Mode Power Supply(SMPS) and has the function of PWM. To reduce the unnecessary electric power, burst mode and skip mode section are introduced and controlled by external power MOSFET to diminish the standby power. The proposed IC is designed and simulated by KEC 30V-High Voltage 0.5um CMOS Process. The structure of proposed IC is composed of voltage regulator circuit, voltage reference circuit, UVLO(Under Voltage Lock out) circuit, Ibias circuit, green circuit, PWM circuit, OSC circuit, protection circuit, control circuit, and level & driver circuit. Measuring the current consumption of each block from the simulation results, 1.2942 mA of the summing consumption current from each block is calculated and ot proved that it is within the our design target of 1.3 mA. The current consumption of the proposed IC in this paper is less than a half of conventional ICs, and power consumption is reduced to the extent of 1W in standby mode. From the above results, we know that efficiency of proposed IC is superior to the previous IC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.7-14
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• 2008

In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.413-422
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• 2003

We have calculated the power extraction efficiency and the lasing wavelength distribution of index-coupled DFB lasers at threshold for various kL and facet reflectivity combinations, and compared with those above-threshold. The power extraction efficiency increases as the asymmetry of the facet reflectivities increases. The power extraction efficiency above-threshold is slightly larger than that at threshold. Since the relative photon density around the center region increases as kL increases, the power extraction efficiency decreases. The uniformity of the distribution of lasing wavelength over the stop band increases due to the relief of mode degeneracy as the asymmetry of the facet reflectivities increases. In the case of AR-HR combination, the lasing wavelength distributions at threshold are similar to those above-threshold. However, in the case of AR-AR combination, the lasing wavelength at threshold is concentrated on both edges of the stop band, while it is concentrated only on the longer wavelength edge above-threshold. As kL increases, the range of the lasing wavelength distribution increases due to the increase of the stop band. The effect of AR reflectivity on the power extraction and the lasing wavelength distribution is very weak.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.1507-1510
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• 2012

본 논문은 EPS(전자식 파워 스티어링)에 사용되는 Torque and Angle sensor 의 절대각 신뢰성 보증 방식에 관한 것으로, Inductive 방식의 센서에서 절대각 신호 신뢰성 보증에 대한 효과적인 방법을 제시한다. 전동식 파워 스티어링 시스템의 ECU(전자제어유닛)는 조타각도를 출력하는 2 개의 소자에서 버니어 알고리즘을 통해 360 도 이상의 멀티 조타각을 인식하게 된다. 토크&조향각 센서는 절대 조향각을 계산하는 1 개의 Hall IC 소자 신호와, 상대 조향각을 계산하는 ASIC 소자 신호를 사용하여 멀티 조타각을 인식한다. 인식된 조타각이 추가적인 검증 절차 없이 제어에 사용된다면, 센서의 이상 발생 시에 운전자의 조타감을 불편해질 수 있고, 나아가서는 차량사고의 위험을 발생시킬 수 있다.따라서 차량 거동 시 절대 조향각의 신뢰성 검증은 제어와 동시에 항상 요구되어야 한다. 특히, 유럽/미국 업계의 ISO 26262 표준 도입에 따라 절대 조향각의 높은 신뢰성이 요구된다. 본 논문에서는 이러한 요구사항을 만족하기 위해 측정된 절대각 신호를 기준으로 상대각 신호 2 개를 측정에 사용하고, Driving 시에도 절대각 기준의 신뢰도 향상을 위해 절대각 신호 1 개를 비교기로 사용한다. 최적화된 에러 기준을 근거로 절대 조향각 신호의 신뢰성을 보장하는 방법을 제안한다. 이러한 방법을 적용한다면, 정확하고 안정적으로 조타각을 결정함으로써 EPS 안전성 확보에 도움을 줄 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.8
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• pp.632-639
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• 2018

This paper presents a single antenna radar sensor with a Ku-band radar transceiver IC realized by 130 nm CMOS processes. In this radar receiver, sensitivity time control using a DC offset cancellation feedback loop is employed to achieve a constant SNR, irrespective of distance. In addition, the receiver RF block has gain control to adjust high dynamic range. The RF output power is 9 dBm and the full chain gain of the Rx is 82 dB. To reduce the direct-coupled Tx signal to the Rx in a single antenna radar, a stub-tuned hybrid coupler is adopted instead of a bulky circulator. The maximum measured distance between the horn antenna and a metal plate target is 6 m.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.5
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• pp.587-592
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• 2018

Because the brightness of an AMOLED is determined by the flowing current, each pixel of AMOLED operates via A current driving method. Therefore, it is necessary to supply power to adjust the amount of current according to THE user's requirement for AMOLED driving. In this study, an IP driver block was designed and a simulation was conducted for an AMOLED display, which supplies power as selected by users. The IP driver design focused on regulating the output power due to the OLED characteristics for the diode electric current according to the voltage to be activated by pulse-skipping mode (PSM) under low loads, and 1.5 MHz pulse-width modulation (PWM) for medium/high loads. The IP driver was designed to eliminate the ringing effects appearing from the dis-continue mode (DCM) of the step-up converter. The ringing effects destroy the power switch within the IC, or increase the EMI to the surrounding elements. The IP driver design minimized this through a ringing killer circuit. Mobile applications were considered to enable true shut-down capability by designing the standby current to fall below $1{\mu}A$ to disable it. The driver proposed in this paper can be applied effectively to the same system as the AMOLED display dual power management circuit.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.154-161
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• 2011

This paper presents a compact integrated transceiver module for 2.4 GHz band applications using Low Temperature Co-fired Ceramic(LTCC) technology. The implemented transceiver module is divided into an RF Front-End Module (FEM) part and a transceiver IC chip part. The RF FEM part except an SPDT switch and DC block capacitors is fully embedded in the LTCC substrate. The fabricated RF FEM has 8 pattern layers and it occupies less than $3.3\;mm{\times}5.2\;mm{\times}0.4\;mm$. The measured results of the implemented RF FEM are in good agreement with the simulated results. The transceiver IC chip part consists of signal line, power line and transceiver IC for 2.4 GHz band communication system. The fabricated transceiver module has 9 layers including three inner grounds and it occupies less than $12\;mm{\times}8.0\;mm{\times}1.1\;mm$. The implemented transceiver module provides an output power of 18.1 dBm and a sensitivity of -85 dBm.

• Electronics and Telecommunications Trends
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• v.24 no.6
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• pp.11-21
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• 2009

에너지를 절약하고 제품을 축소하기 위하여 전력공급 장치나 전력변환 장치에 사용되는 전력반도체는 전력용 파워스위칭 소자와 제어 IC로 구성되어 전력을 시스템에 맞게 배분하는 제어와 변환기능을 가진 반도체로 단순히 전력을 조절하고 전달하는 역할에서 에너지효율 제고 및 시스템 안정성과 신뢰성을 좌우하는 역할로 확장되어 가고 있고, 교토의정서 등의 지구 온난화 방지노력과 글로벌 환경규제의 확대로 친환경 절전형 부품/시스템 개발이 절실히 요구되는 실정이다. 이에 따라, 본 고에서는 스마트환경, 그린에너지, 예방진단 등 미래 인간생활 대응을 통해 신기술 및 신시장을 창출하는 신성장 동력 분야인 저전력, 고효율, 저발열, 저소음 등 환경 친화적으로 동작하여 에너지 효율 및 $CO_2$ 배출에 직접적인 영향을 미치는 친환경 절전형 전력반도체 기술 동향에 대해 논의하고자 한다.