• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.26-32
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• 2008

The performance of an analog winner-take-all(WTA) circuit is affected by the corner error and the offset error. Despite the fact that the corner error can be reduced with large transconductance of the transistor, the offset error caused by device mismatch has not been completely studied. This paper presents the complete offset error analysis, and proposes low offset design guidelines and an offset cancellation scheme. The experimental results show good agreement with the theoretical analysis and the drastic improvement of the offset error.

• Journal of Korea Multimedia Society
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• v.7 no.11
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• pp.1515-1520
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• 2004

In this paper, a new continuous-time bandpass active filter for lour-voltage applications is proposed. The active filter is composed of the CMOS complementary cascode circuit which can increase trans-conductance of an active element. These results are verified through the 0.25$\mu\textrm{m}$ CMOS n-well parameter hspice simulation. As a result, the gain and the unity gain frequency is 42dB and 200MHz respectively in the integrator. Additionally, center frequency of the bandpass active filter is 747kHz. And also bandwidth of the filter is 649kHz on 2V supply voltage.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.354-356
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• 2013

본 논문에서는 CMOS 스위치를 이용한 디지털 이득 제어 구조를 가진 이득 조절 증폭기 (PGA, Programmable Gain Amplifier)를 제안한다. 기존의 아날로그 이득 제어 방식에서는 가변적인 트랜스 컨덕턴스를 활용하는 과정에서 바이어스 전류나 전압에 의해 이득이 변하게 되어 순간적으로 구성회로의 바이어스 포인트가 변하기 때문에 왜곡이 발생하게 되는 문제점이 있다. 본 논문에서는 이러한 문제점을 해결하기 위해 기존의 gm-boosting 증폭기를 변형한 디지털 이득 제어 방식으로 설계되어 있기 때문에 우수한 선형성을 가지며 특수 목적에 맞도록 그 이득을 6dB에서 60dB까지 7가지 단계로 조절 가능하다. 제안한 PGA는 기존 회로에 비해 0.2dB 보다 작은 이득오차와 0.47mW의 낮은 소비전력 특성을 보였다.

• ETRI Journal
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• v.13 no.4
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• pp.10-24
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• 1991

본 연구에서는 기상 성장법 (VPE : vapor phase epitaxy) 으로 성장된 $n^+(Si:2X10^18cm^-3)$/$n(Si:1x10^17cm^-3)$구조의 시편 위에 SiN 과 감광막 등 식각 선택비가 서로 다른 두 물질로 보호된 소스와 드레인 사이의 게이트 형성 영역을 건식식각과 습식식각방법으로 리세스 에칭을 하여 형성한 후, 게이트를 자기정렬하여 형성시킬 수 있는 이중 리세스공정 기술을 개발하였고, 이를 통하여 전력용 MESFET 소자를 제작하였다.게이트 형성부분의 wide recess 폭은 건식식각으로 SiN을 측면식각(lateral etch) 함으로써 조절하였는데, 이 방법을 사용하여 MESFET 소자의 임계전압을 조절할 수 있고, 동시에 소스-드레인 항복전압을 30V 까지 향상시킬 수 있었다. 소스-드레인 항복전압은 wide recess 폭이 증가함에 따라, 그리고 게이트 길이가 길어짐에 따라 증가하는 경향을 보여주었다. 이 방법으로 제작한 여러종류의 MESFET 중에서 게이트 길이가 $2\mum$이고 소스-게이트 간격이 $3 \mum$인 MESFET의 전기적 특성은 최대 트랜스컨덕턴스가 120 mS/mm, 게이트 전압이 0.8V 일 때 포화드레인전류가 170~190mA/mm로 나타났다. 제작된 MESFET이 ($NH_4$)$_2$$S_x$ 용액에 담금처리될때 , 공기중에 노출된 게이트-드레인 사이의 n-GaAs층의 표면이 유황으로 보호되어 공기노출에 의한 표면 재산화막의 형성이 억제되었기 때문으로 사료된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.37-44
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• 2003

A distortion suppression technology for employing multiple inputs in 3n＋1 type current mode Max circuit is proposed using the adjustment of transconductance. If the number of input blocks of the current mode Max circuit increases, the high frequency distortion in the output signal grows. In this paper, it has been disclosed that the distortion in the multiple input Max circuit is proportional to such accumulated parasitic capacitance, to the derivative of the output signal and also to tile inverse of transconductance of the common diode-connected transistor. The proposed idea is by employing as larger transconductance of the common diode-connected transistor as possible. The effectiveness of the proposed idea has been proved through the HSPICE simulation for the current mode Max circuits with various numbers of input signals.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.4
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• pp.602-610
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• 1993

The DDA of new active element and the DDA differential integrator are designed. The DDA can be improved matching problems of external elements in op-amp application circuits. The design of DDA is used the transconductance element, differential pair and $2{\mu}m$ design rule. In order to evaluate the performance of the CMOS DDA, we simulated the DDA voltage inverter and the DDA level shifter using the designed CMOS DDA. Furthermore, the grounded resistor and the differential integrator is designed using the CMOS DDA and we found that its characteristics are agreed to OP-AMP differential integrator's. We performed the layout of the CMOS DDA and DDA differential integrator with MOSIS $2{\mu}m$ CMOS technology.

• Journal of Convergence for Information Technology
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• v.11 no.11
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• pp.159-165
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• 2021

A fin channel with a fin width of 20 nm and a gradually increased source/drain extension regions are fabricated on a bulk silicon wafer by using a three-dimensional selective oxidation. The detailed process steps to fabricate the proposed fin channel are explained. We are demonstrating their preliminary characteristics and properties compared with those of the conventional fin field effect transistor device (FinFET) and the bulk FinFET device via three-dimensional device simulation. Compared to control devices, the three-dimensional selective oxidation fin channel MOSFET shows a higher linear transconductance, larger drive current, and lower series resistance with nearly the same scaling-down characteristics.

• Journal of IKEEE
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• v.23 no.2
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• pp.636-641
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• 2019

A simple resistance deviation-to-time period converter is proposed for interfacing resistive half-bridge sensors. It consists of two 2nd generation current conveyors(CCIIs). The proposed converter has simpler circuit configuration than the conventional converters using operational amplifiers or operational transconductance amplifiers(OTAs). The proposed converter was simulated using CCII implemented with AD844 IC chips. The simulation results show that the converter has a conversion sensitivity of $0.01934ms/{\Omega}$ over a range of $100-500{\Omega}$ resistance deviations and a linearity error less than ${\pm}0.002%$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.81-88
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• 2006

This paper describes a new linear operational transconductance amplifier (OTA). To improve the linearity of the OTA, we employ a mobility compensation circuit that combines the transistor paths operating at the triode and subthreshold regions. The common-mode control schemes consist of a common-mode feedback (CMFB) and common-mode feedforward (CMFF). The circuit enhances linearity of the transconductance (Gm) under the wide input voltage swing range. The proposed OTA shows ${\pm}1%$ Gm variation and the total harmonic distortion (THD) of below -73dB under the input voltage swing range of ${\pm}1.1V$. The OTA is implemented using a $0.35{\mu}m$ n-well CMOS process under 3.3V supply.

• Journal of IKEEE
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• v.15 no.1
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• pp.57-63
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• 2011

This paper presents a tunable band pass filter (BPF) for multi bio-signal detection. The bandwidth can be controlled by the bias current of transconductance (gm), while conventional BPF exploited switchable capacitor array for band selection. With this design technique, the die area of proposed BPF reduced to at least one tenth the area of conventional design. The simulation results show the high cut-off frequency tuning range of from 100Hz to 1Khz. The circuit was implemented with a 0.18um CMOS standard technology. Total current consumption is 1uA at the supply voltage of 1V with sub-threshold design technique.