• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.553-556
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• 2003

금속유기물 용액 증착법(MOD)법은 금속유기물 용액을 스핀 코팅하여 고온 열처리를 통해 대면적의 고온 초전도 박막을 만들 수 있으며, 고가의 진공 시스템이 필요하지 않기 때문에 매우 경제적인 박막 증착 방법이다. 본 연구에서는 MOD법을 이용해서 고온초전도체 마이크로파 필터나 터널접합 소자와 같은 전자 소자 응용 연구를 위해 요구되는 높은 임계전류 특성을 갖도록 박막 성장 조건을 변화시켜서 제작된 고온 초전도체 Bi2Sr2CaCu2O8+d (BSCCO2212) 박막을 제작하였다. 박막 특성은 x-ray diffraction (XRD), scanning electron microscope (SEM)으로 표면적, 구조적 특성을 관찰하고 저항-온도 (R-T) 변화 및 전류-전압 (I-V) 특성 측정을 통해 전기적 특성을 연구하여 임계전류를 향상 시킬 수 있는 박막제작 조건에 관해 논의하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.688-693
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• 2001

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

• Journal of the Korean Magnetics Society
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• v.20 no.6
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• pp.212-215
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• 2010

Spin polarized tunneling studies were carried out with Al-Ga bilayer as a spin detector, by Meservey-Tedrow technique. The superconductor (SC)/Insulator (I)/Ferromagnet (FM) tunnel junctions were provided by ultra high vacuum molecular beam epitaxy (UHV-MBE) technique. The analysis of interfacial properties in the Al-Ga bilayer was also carried out by Auger electron spectroscopy. It was observed that the superconducting transition temperature and energy gap were raised in comparison with that of bulk Ga and pure ultrathin Al films. Current studies clearly show how one can modify the material properties at the interface just with a few monolayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.145-145
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 최근 마이크로파 또는 밀리미터파 등의 차세대 고주파용 전력소자로 각광받고 있다. AlGaN/GaN HEMT는 이종접합구조(heterostructure) 로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 높은 전자 이동도, 높은 항복전압 및 우수한 고출력 특성을 얻는 것이 가능하다. AlGaN/GaN HEMT에서 ohmic 전극 부분과 채널이 형성되는 부분과의 거리에 의한 저항의 성분을 줄이고 전자의 터널링의 확률을 증가시키기 위해서 recess된 구조가 많이 사용되고 있다. 그러나 이 구조에서는 recess된 소스와 드레인에 의해 AlGaN층의 제거로 AlGaN층의 두께에 영향을 미치며 그에 따라 채널에 생성되는 전자의 농도를 변화시키게 된다. 본 논문에서는 소스와 드레인의 Trench 구조를 제안하였다. ohmic 전극 부분과 채널간의 거리의 감소로 특성을 향상시켜서 recess 구조의 장점이 유지된다. 그리고 recess되는 소스와 드레인 영역에서 AlGaN층을 전체적으로 제거하는 것이 아니고 Trench 즉 일부분만 제거하면서 AlGaN층의 두께의 변화에 따른 문제점도 줄일 수 있다. 따라서 이러한 전극 부분을 Trench구조화 시킨 AlGaN/GaN HEMT의 DC특성을 $ATLAS^{TM}$를 이용하여 전산모사하고 최적화된 구조를 제안하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.433-438
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• 2020

To enhance the tunneling electroresistance (TER) ratio of a ferroelectric tunnel junction (FTJ) device using Al-doped HfO₂ thin films, a thin insulating layer was prepared on a TiN bottom electrode, for which TiN was preliminarily treated at various temperatures in O₂ ambient. The composition and thickness of the inserted insulating layer were optimized at 600℃ and 50 Torr, and the FTJ showed a high TER ratio of 430. During the heat treatments, a titanium oxide layer formed on the surface of TiN, that suppressed oxygen vacancy generation in the ferroelectric thin film. It was found that the fabricated FTJ device exhibits two distinct resistance states with higher tunneling currents by properly heat-treating the TiN bottom electrode of the HfO₂-based FTJ devices in O₂ ambient.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.61-66
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• 1999

The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.323-324
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• 2019

For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.

• Journal of the Earthquake Engineering Society of Korea
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• v.10 no.6 s.52
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• pp.137-145
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• 2006

Recently, the interests in structural monitoring of civil infrastructures are increased. Especially, as the civil infrastructures such as bridges, tunnels and buildings become large-scale, it is necessary to monitor and maintain the safety state of the structures, which requires smart systems that can supply long-term monitoring during the service time of the structures. In this paper, we investigated the possibilities of fiber optic sensor application to the various structures. We investigate the possibility of using fiber optic Bragg grating sensors to joint structure. The sensors show good response to the structural behavior of the joint while electric gauges lack of sensitivity, durability and long term stability for continuous monitoring. We also apply fiber optic structural monitoring to the composite repaired concrete beam structure. Peel-out effects is detected with optical fiber Bragg grating sensors and the strain difference between main structure and repaired carbon sheets is observed when they separate each other. The real field test was performed to verify the behaviors of fiber Bragg grating sensors attached to the containment structure in Uljin nuclear power plant in Korea as a part of structural integrity test which demonstrates that the structural response of the non-prototype primary containment structures. The optical fiber Bragg grating sensor smart system which is the probable means for long term assessments can be applicable to monitoring of structural members in various civil infrastructures.

• Journal of Korean Society of Steel Construction
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• v.24 no.3
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• pp.267-278
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• 2012

In general, the H-shaped steel ribs or triangular lattice girders have been mostly used in constructing tunnels through the NATM construction method. The H-shaped steel rib has higher flexural and axial strength than the triangular lattice girder, but many unexpected gaps can occur in the concrete lining system after shotcreting if the H-shaped steel rib is used as the support system. To achieve better shotcreting quality, the triangular lattice girder was developed. However, in general, the triangle lattice girder has low flexural and axial strength. Likewise, the triangular lattice girder, which has circular sectional members, has so many fractures from welded points at the joints between the members. Finally, the new type of tetragonal lattice girder was developed to overcome those problems. In this study, the structural performance of the tetragonal lattice girders was evaluated through analytical and experimental studies. In the analytical studies, the four-point bending analysis, the traditional evaluation method to determine the flexural strength of the lattice girder, was performed. Moreover, the linear-elastic analysis and stability analysis of the arch structure made by the lattice girders were performed to measure structural performance. Experiments were likewise performed to compare the structural performances of the tetragonal girder with traditional triangular lattice girders.