• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.239-242
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• 2003

자동차 점화장치는 전원으로부터 공급된 낮은 전압을 점화코일을 통하여 연소실의 혼합기를 연소시키기에 충분한 고전압을 발생시키는 장치이며, 점화장치의 핵심은 점화코일이다. 이 점화코일은 절연성능이 우수한 절연재료가 사용되지만 고전압의 발생으로 점화코일 내부에서 일어나는 전기적 열화로 인해 누설전류가 흐르게 되어 전기적 고장을 초래할 수 있다. 이로 인하여 절연재료의 수명은 단축되며, 또한 점화코일에 전류가 흐름으로써 코일 내부에서 발생하는 온도변화에 따른 절연열화로 점화코일의 성능이 저하될 수 있다. 따라서 본 연구에서는 점화코일에 사용되고 있는 절연재료에 전압이 인가될 때 발생할 수 있는 비파괴검사의 일종인 부분방전 측정을 통하여 전압변화에 따른 에폭시 성형 점화코일의 위상각($\Phi$) - 방전전하량(q) - 발생빈도수(n)의 특성 변화를 조사하고 분석함으로써 점화코일의 수명을 예측하여 자동차 점화장치의 성능진단과 정보제공을 자동차 전기장치의 발전에 도움이 될 것을 기대하며, 온도상승에 따른 점화코일의 부분방전 특성을 실험하고 분석하였다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.6
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• pp.467-472
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• 2021

In this paper, the ignition trans used in the gas boiler was produced to measure current, power factor, and power consumption. As a result of measuring the power factor, the self-made ignition trans was higher than that of foreign products and the power consumption was lower. The ignition gap was fixed to 2 m, and when the ignition rod length was 30cm, 500cm, and 1000cm, it was measured as 3.45A, 14.5A, and 16.2A. When the ignition gap was fixed to 4mm and the ignition rod length was 30cm, 500cm, and 1000cm, it was measured as 2.8A, 10.1A, and 13.2A. When the ignition gap was fixed at 6mm and the ignition rod length was 30cm, 500cm, and 1000cm, it was measured as 2.73A, 10.2A, and 32.6A. When the ignition gap was fixed at 8 mm and the ignition rod length was 30 cm, 500cm, and 1000cm, it was measured as 3.13A, 9.37A, and 21.4. The ignition gap was fixed at 10 mm, and when the ignition rod length was 30cm, it was measured as 3.4A, 14.4 A, and 25.6A. In conclusion, as the length of the ignition rod increased, the current also increased.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.31-36
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• 2001

The secondary election emission (SEE) yields for the thermally grown $SiO_2$ thin layers were measured by varying the thickness of the $SiO_2$ layer and the primary current. $SiO_2$ thin layers were thermally grown in a furnace at $930^{\circ}C$, whose thickness varied to be 5.8 nm, 19 nm, 43 nm, 79 nm, 95 nm, and 114 nm. When the $SiO_2$ layers were thinner than 43 nm, it was found that SEE curves followed the universal curve. However, for samples with a $SiO_2$ layer thicker than 79 nm, the SEE curves exhibited two maxima and the values of SEE yields were reduced. Additionally, as the current of primary electrons increased, the SEE yields were reduced. In this experiment, the maximum value of the SEE yield for $SiO_2$ layers was obtained to be 3.35 when the thickness of $SiO_2$ layer was 19 nm, with the primary electron energy 300 eV and the primary electron current 0.97 $\mu\textrm{A}$. The penetration and escape depth of an electron in the $SiO_2$ layers were calculated at the primary electron energy for the maximum value of the SEE yield and from these depths, it was calculated that the thickness of the $SiO_2$layer.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.2
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• pp.151-158
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• 2010

In order to measure the deposition velocity of $I_2$ vapor for radish plants and its translocation factor for their roots, radish plants were exposed to $I_2$ vapor for 80 min. at different growth stages between 29 and 53 d after sowing. The exposure was performed in a transparent chamber during the morning time. Deposition velocities ($ms^{-1}$) were on the whole in the range of $1.0{\times}10^{-4}{\sim}2.0{\times}10^{-4}$ showing an increasing tendency with an increase in the biomass density. The results showed some agreement with existing reports that a higher relative humidity would lead to a higher deposition velocity. The acquired deposition velocities were lower than by factors of several tens than some field measurements probably due to a very low wind speed (about $0.2\;ms^{-1}$) in the chamber. Translocation factors (ratio of the total iodine in the roots at harvest to the total plant deposition), estimated in a more or less conservative way, were $1.3{\times}10^{-3}$ for an exposure at 29 d after sowing and $5.0{\times}10^{-3}$ for an exposure at 53 d after sowing. In using the present experimental data, meteorological conditions and chemical and physical forms of iodine need to be carefully considered.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.784-795
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• 2007

In this thesis, the Multi element antenna with wideband and enhanced gain characteristic is proposed to operate at both frequency range from 824 MHz to 896 11Hz for the CDMA and frequency range from 908.5 MHz to 914 MHz for the RFID band. The proposed antenna has tile size of $35{\times}15{\times}5mm^3$ in order to put it in the A model of S company and each element of the proposed antenna is folded to obtain the minimum size. To obtain the antenna with wideband and high gain characteristic, the radiator of the antenna is divided into 4 elements. As a result, bandwidth of the proposed antenna become broader and lower center frequency is appeared due to increased and lengthened current path. Moreover, the enhanced gain characteristic is verified because divided element structure that induct uniform current distribution can get increased antenna efficiency. To attain more uniform current distribution, modified structure of the feeding point that can deliver currents directly is designed. The antenna that alters the feeding structure has higher gain value. Each element is folded to increase the current paths considering the current directions to attain the miniaturization of the antenna. To measure the handset antenna, the handset case must be considered. Even though antenna is designed for predicted characteristic, the resonance frequency is shifted and antenna gain is deteriorated at predicted frequency while antenna is set in the handset case. 1.08 GHz of the resonant frequency is determined after frequency shift from 150 MHz to 200 MHz is confirmed and the maximum gain is measured as 3.1 dBi while antenna is not set in the handset. In case handset case is considered, the experimental results show that the impedance bandwidth for VSWR<2 is from 0.824 GHz to 0.936 GHz(110 MHz). This result appears that the proposed antenna can cover both CDMA and RFID band at once. The measured gain is from -3.4 dBi to -0.5 dBi and it has omni-directional pattern practically.

• Journal of the Institute of Convergence Signal Processing
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• v.4 no.2
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• pp.61-69
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• 2003

In this paper, we developed the U parameter test system which inspects the property of DC parameter for semiconductor products. The developed system is interfaced by IBM-PC. It is consisted of CPLD part, ADC (Analogue to Digital Converter), DAC (Digital to Analogue Converter), voltage/current source, variable resistor and measurement part. In the proposed system, we have designed the constant voltage source and the constant current source in a part. The CPLD part is designed by VHBL, which it generates the control and converts the serial data to parallel data. The proposed system has two test channels and it operates VFCS mode and CFVS mode. The range of test voltage is from 0[V] to 100[V], and the range of test current is from 0[mA] to 100[mA)]. The diode is tested. The test results have a good performance.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.176-185
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• 2009

The realization and the performance of ICP source are strongly affected by its electrical impedance and the electric/magnetic field distribution. The ICP source impedance is determined by the antenna impedance and the plasma one. It is preferred to keep the imaginary impedance between -100 ohm to 100 ohm, since it should be avoided the high voltage formation on the antenna and abrupt impedance variation during the thin film process. The plasma uniformity is affected by the electric and magnetic field which is formed by the antenna current and voltage. The influence of azimuthal symmetry are shown by the electromagnetic simulation and the measurement result of plasma density. The radial uniformity can be controlled by locating the concentric antennas which have different diameters. The power distribution ratio and its control method are presented in the case of parallel antenna connections.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.59-65
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• 2007

Recently, ubiquitous sensor network(USN) techniques have been applied to electric power facility management. This paper dealt with the designed and fabricated ubiquitous sensors which monitor transformers and lightning arresters installed in overhead distribution systems. The sensors consist of a 8-[bit] microprocessor unit, a wireless communication nodule specified in IEEE 802.15.4, and associated electronics. A Rogowski coil was fabricated to measure load of transformer and surge current without saturation having good linearity up to 1000[A]. A zero-phase current transformer with a high relative permeability of $10^5$ at 180[Hz] was used to detect small leakage current of $50[{\mu}A]{\sim}1[mA]$ flowing lightning arrester, and the frequency bandwidth of the module is ranges from 12[Hz] to 1.24[kHz] at -3[dB].

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.488-490
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• 2010

최근 심각한 환경오염 문제와 화석 에너지 고갈로 차세대 청정 에너지 개발에 대한 중요성이 증대되고 있다. 그중에서 태양정지는 공해가 적고, 자원이 무한적이며 반 영구적인 수명을 가지고 있어 미래에너지 문제를 해결할 수 있는 에너지원으로 기대되고 있다. 본 연구에서는 P3HT(regioregular poly(3-hexylthiophene))와 PCBM(fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester)을 전자 도너와 억셉터 물질을 하나의 브랜드로 광 활성층을 형성하는 BHJ(bulk hetero junction)구조를 갖는 고분자 유기 박막 태양전지를 각각 Toluene, Mono-Chlorobenzene, Dichlorobenzene에 $60^{\circ}C$, 200rpm으로 약 12시간동안 1wt%로 교반(Stirring)한 후에 중량비(1:1 wt%)로 혼합하여 스핀코팅(Spin-coating)으로 제작하였고, 완성된 소자의 광활성층 면적은 0.04cm2이며, $150^{\circ}C$에서 후속 열처리 공정을 통해 특성 향상이 측정 되었다. 태양전지 소자 구조는 Glass / ITO / PEDOT:PSS / P3HT : PCBM / Al이다. 전류-전압, FF(Fill Factor), 변환효율 측정을 위해 solar simulator를 AM1.5 조건(100 mW/cm2)으로 이용하였으며, 소자의 최대 전류밀도는 12mA/$cm^2$, 개방전압은 0.566V이고 F.F(Fill Factor)는 55.2%이고 변환효율은 3.7%이다. 후속 열처리후 더욱 좋은 성능을 갖게 되었고, 최대 효율은 Dichl orobenzene일 때 이다.