• Korean Journal of Crystallography
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• v.10 no.1
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• pp.39-44
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• 1999

주파수 무선센서에 의한 자동직경제어방식으로 쵸크랄스키법에 의해 Bi4Ge3O12 단결정을 육성하였다. Bi4Ge3O12의 화학양론적 조성으로부터 Bi2O3와 GeO2의 조성비를 변화시키면서 단결정을 육성하였다. 광학적인 투과도 조사결과, 화학양론적 조성에서 가장 우수한 투과도를 나타내었고 과잉의 Bi2O3에서는 투과도가 현저히 낮아졌다. 또한 육성된 단결정의 결함밀도는 ∼1×103/cm2이었다.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.79.2-79
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• 2000

• Resources Recycling
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• v.31 no.1
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• pp.3-11
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• 2022

Silicon is the most abundant metal element in the Earth's crust. Metallurgical-grade silicon (MG-Si) is an important metal that has wide industrial applications, such as a deoxidizer in the steelmaking industry, alloying elements in the aluminum industry, the preparation of organosilanes, and the production of electronic-grade silicon, which is used in the electronics industry as well as solar cells. MG-Si is produced industrially by the reduction smelting of silicon dioxide with carbon in the form of coal, coke, or wood chips in electric arc furnaces. MG-Si is purified by chemical treatments, such as the Siemens process. Most single-crystal silicon is produced using the Czochralski method. These smelting and refining methods will be helpful for the development of new recycling processes using secondary silicon resources.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.585-589
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• 1999

In order to grow $Bi_4Ge_3O_{12}$ crystals by the Czochralski method equipped with the auto-diameter control system, we used the resistance heater of our own design. We measure the temperature gradients under-arious thermal configurations. The relation between the critical rotation rate corresponding to the flat interface and the temperature gadient was investigated, and the importance of the axial temperature gradient was pointed out. The results from this work were compared with those obtained by other authors when RF heating was used. The optimal conditions for the crystal growth were determined as follows; under $O_2$ atmosphere with the pulling rate fixed at 2 mm/hr, rotation rate changed from 30 to 23 rpm as the crystal growth proceeded, radial and axial temperature gradients were 50 and $40^{\circ}C$/cm near melts respectively, and the composition was chemically stoichiometric.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.677-683
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• 2004

Nd:LLM (Nd:LiLa(MoO$_4$)$_2$) single crystals for the laser host material were grown by the Czochralski method. The Nd:LLM grown single crystals cracked easily, and the reasons of cracks are generally related with phase transition, incongruent melting, chemical heterogeneity of composition, geometric thermal structures of imbalance and growth direction. We confirmed that phase transition is not observed by TG-DTA thermal analysis, and the XRD analysis revealed congruent melting in our products. It was confirmed that the volatilization of Li$_2$O composition is the important reason of chemical heterogeneity. The geometric thermal profile of the resistance furnace of our own design was controlled with a crucible height. Also, Nd:LLM crystal affected growth direction, and was the best quality in case of (101) growth direction. The distribution and effective distribution coefficient of Nd$^{3+}$ ion were accomplished by PIXE analysis.s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.179-184
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• 2018

To lessen oxygen concentrations in a wafer through modifying the length of graphite heaters, we investigated the influence of relative distance from heater to quartz crucible on temperature profile of hot-zone in Czochralski silicon-crystal growth by simulation. In particular, ATC temperature and power profiles as a function of different ingot body positions were investigated for five different heater designs; (a) typical side heater (SH), (b) short side heater-up (SSH-up), (c) short side heater-low (SSH-low), (d) bottom heater without side heater (Only-BH), and (e) side heater with bottom heater (SH + BH). It was confirmed that lower short side heater exhibited the highest ATC temperature, which was attributed to the longest distance from triple point to heater center. In addition, for the viewpoint of energy efficiency, it was observed that the typical side heater showed the lowest power because it heated more area of quartz crucible than that of others. This result provides the possibility to predict the feed-forward delta temperature profile as a function of various heater designs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.141-147
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• 2018

Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.42-47
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• 2000

The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H$_2$ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during $H_2$annealing process also has been observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.99-106
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• 1993

A relationship $(T_c = -17.869C^2+1840.2C-46623)$ between Curie Temperature$(T_c)$ and (C), $Li_2O$ mole percent(%) was established from the measurement results of Curie temperature $(T_c)$) analysed by DTA(Differential Thermal Analysis) in the range from 48.50 to 49.00 $Li_2O$ mole %. Congruent melt composition of $LiTaO_3$ single crystal was to be 48.65 $Li_2O$ mole % and its Curie temperature was also determined to be $610{\pm}1^{\circ}C$ from the results of Curie temperature difference, ${\Delta}T (T_{c(Top)}-T{_c(Tail)})$ of Czochralski grown $LiTaO_3$ crystals and the distribution coefficient(k). The k was calculated from $LiO_2$ mole ratio of initial melt to final melt and initial crystal to final crystal in the range from 48.60 to 48.70 $Li_2O$ mole %.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.30-38
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• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.