• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.301-302
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• 2006

초고주파 전력 증폭기의 바이어스 전압을 조절하여 온도 변화에 따른 드레인(Drain) 전류의 변화를 억제하기 위한 저가의 능동 바이어스 모듈을 개발한다. 능동 바이어스 모듈을 5 W급 초고주파 전력증폭기에 적용하였을 경우, $0{\sim}60^{\circ}C$까지의 온도변화에 대하여 소모전류 변화량은 0.1 A 이하로 되어야 한다. 본 기술 개발 대상인 능동 바이어스 모듈의 성능 시험을 위한 대상 전력증폭기는 $2.11{\sim}2.17GHz$ 주파수 대역에서 32 dB 이상의 이득과 ${\pm}0.1\;dB$ 이하의 이득 평탄도, -15 dB 이하의 입.출력 반사손실을 가진다.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2000.12a
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• pp.237-240
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• 2000

본 논문에서는 ISM(Industrial Scientific Medical) 대역 424MHz부터 429MHz까지의 범위에서 동작하는 열차 후부 감시제어 시스템용 RF 전력증폭기를 설계 및 제작하였다. 424MHz대역에서의 2W급 대전력 증폭기의 설계방법으로는 Double Stub Tuner구조를 이용하여 최적 부하 임피던스를 추출하는 방법을 제시하였고, 초고주파 시뮬레이터인 Serenade8.0을 사용하여 Drive_amp와 LPF를 설계하였다. 제작된 Drive_amp와 LPF의 성능 및 특성은 시뮬레이션 한 결과와 거의 일치하였으며, 대전력 증폭기의 측정결과로는 추출하고자 하는 출력 레벨인 33㏈m을 얻을 누 있었고, 원신호의 Hamonic 주파수 성분과는 40.34㏈c의 결과를 보임으로써 안정된 전력증폭기를 구현하였다.

• 한국정보통신설비학회:학술대회논문집
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• 2003.08a
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• pp.269-271
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• 2003

초고주파/밀리미터파 대역에서 전력증폭기의 효율을 향상시키기 위해 MEMS 튜닝회로를 설계하였다. MEMS 튜닝회로의 효과를 확인하기 위해 2차 및 3차 고조파를 억제할 수 있도록 3-stub Class-E 증폭기를 설계하였으며 또한 설계된 증폭기에 대해 시뮬레이션을 실시하였다. 시뮬레이션의 결과로서 8GHz에서 14dBm입력에 대해 MEMS가 적용된 증폭기의 성능은 PAE=66 9%, drain efficiency=75.89%, 그리고 출력 P=23.37 dBm을 얻었다. 또한 FET의 기생리액턴스의 변화에 대해서 MEMS 튜닝회로의 효율증대효과를 확인하였다. 결론적으로 이 연구에서 제안된 새로운 방법을 통해 증폭기의 효율향상을 위한 효과적인 방법이 될 수 있음 보여 주었다.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.81-86
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• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.67-76
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• 2000

In this paper, a low noise amplifier has been developed, which is operating at L-band i.e., 1525-1575 MHz. By using resistive decoupling circuits, the resistor dissipates undesired signal in low frequency band. By adopting this design method the stability of the LNA is increased and the input impedance matching is improved. The LNA consists of the low noise GaAs FET ATF-10136 and the internally matched VNA-25. The low LNA is fabricated by both the RP circuit and the self-bias circuits in an aluminum housing. As a result, the characteristics of the LNA implemented show more than 32 dB in gain, lower than 0.5 dB in noise figure, 18.6 dBm output gain in 1 dB gain compression point.

• Journal of the Korean Institute of Navigation
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• v.25 no.1
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• pp.53-60
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• 2001

This paper presents the fabrication of the LNA which is operating at 2.13 ~ 2.16 GHz for IMT-2000 front-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a GaAs FET keeps the low noise characteristics and drops the input reflection coefficient of a low noise amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network. The amplifier consists of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using the above design technique are presented more than 30 dB in gain, PldB 17 dB and less than 0.7 dB in noise figure, 1.5 in inputㆍoutput SWR(Standing Wave Ratio).

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.5
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• pp.575-582
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• 2007

In this paper, a 100 Watt high power amplifier has been implemented and performed evaluation, which is operating at UHF band ($470\;{\sim}\;806\;MHz$) for Digital TV repeater. To achieve increase of bandwidth and high power capability, 3-way power combiner and divider of Wilkinson type was adopted. In order to measure the fabricated 100 Watt power amplifier, the estimation technique function which makes equivalent mask was used. As a result of the measurement, the existence of pilot signal is confirmed and the signal transmitted at the rated output power 100 Watt is brought out the flat feature through 6 MHz bandwidth. and it resulted that its value was less than -47 dB at the edge of radiation channel and less than -110 dB at more than 6 MHz position from channel edge.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.1
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• pp.19-26
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• 1987

The broadband microwave amplifier in the 3~4GHz frequency range has been designed by using potentially unstable GaAs FET. Input matching network is designed by 14dB available power gain circles which are in the stable region. In order to obtain maximu, transducer power gain, output matching network which is in the stable region can be designed using Fano's bandpass matching network. The measured values of transducer power gain, $S_11$and $S_22$ show close agreements with the theoretical valuse.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.1
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• pp.61-70
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• 2008

This paper presents the flexible MEMS transmitter based on flexible printed circuit board or FPCB, which can be transformed to arbitrary shape. The FPCB is suitable to fabricate light weight and small size modules with the help of its thin thickness. Moreover a module based on FPCB can be attached on the arbitrary curved surface due to its flexible enough to be lolled up like paper. In this paper, the flexible MEMS transmitter integrated on FPCB for a short-distance sensor network which is based on orthogonal frequency division multiplexing(OFDM) communication system is proposed. The active device of the proposed flexible MEMS transmitter is fabricated on InGaP/GaAs HBT process which has been used for power amplifier design to take advantages of high linear and high efficient characteristics. Moreover, the passive devices such as the filter and signal lines are integrated and fabricated on the FPCB board. The performance of the fabricated flexible MEMS transmitter is analyzed with EVM characteristics of the output signal.