• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1056-1061
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• 2001

In this paper we have evaluated the degree of performance improvement in Multi-Carrier CDMA system adopting CCI canceller against MUI under mobile channel coexisting MU which is a major interference degrading the performance of Multi-carrier CDMA system. As a result of analysis, BER performance was improved by adopting CCI canceller and it was found that the amount of performance improvement was largely increased as Eb/No became higher. As an example, in case that data service BER = 10$^{-5}$ must be achieved with $E_{b/}$ $N_{o}$ = 12 ㏈, 4 users could be supported without CCI canceller while 30 users could be supported with CCI canceller, Also, we found that performance improving effect of 5$\times$10$^{-3}$ in a point of view BER could be achieved by adopting CCI canceller with fixed $E_{b/}$ $N_{o}$. o/. o/.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.14 no.6
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• pp.125-132
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• 2015

This paper presents an event data delivery scheme for wireless sensor networks that use a GTS-based channel allocation scheme. Many sensor nodes can share a GTS channel for sending their normal data to the sink node. When there is an event at a node, the node makes a temporal route to the sink node and the nodes of the route can use the GTS channel in a privileged access. This scheme controls the backoff number effectively so the data delivery priority is given to the nodes of that route. Simulation results show that the event data delivery of the proposed scheme outperforms at the end-to-end transfer delay and jitter characteristics. The proposed scheme can effectively gather the event data using the guaranteed GTS channel of the route in proposed scheme.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.13 no.5
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• pp.27-34
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• 2014

This paper presents a collision avoidance scheme for wireless sensor networks that use a GTS-based channel allocation scheme. Many sensor nodes can share a GTS channel for sending their data to the sink node. When a node tries to send a frame at a shared GTS channel, a collision can be occurred when there is a node that uses the same backoff number. For decreasing a wireless collision, the parent assigns a backoff number when a child node registers to it. Further, when a collision occurs during a data transfer, the parent node reassigns a new backoff number for the child node. Simulation results show that there is a decreased collision number with suggested parent-controlled collision avoidance scheme by effectively controlling the backoff number of the child.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1592-1596
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• 2010

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.1-6
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• 2010

We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

• Journal of the Korean Society of Propulsion Engineers
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• v.17 no.2
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• pp.114-121
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• 2013

In order to estimate the efficiency of an evaporative heat exchanger having mini channel, the equations to calculate heat exchanger properties, those are air temperatures and water temperatures etc, are derived from the governing equations based on the Navier-Stokes equation, even though there are several assumptions to make problem simplify. There are three heat transfer zones at the mini channel heat exchanger depending on the water condition. So, there are three governing equations and solutions to calculate the properties. As the results of this study, the equations to calculate a saturation point and a dry point are derived to evaluate an evaporative heat exchanger having micro channel. It is supposed to predict and evaluate the performance of a mini channel heat exchanger with evaporation of liquid.

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2619-2621
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• 2002

전력선 통신(Power-Line Communication)은 기본적으로 데이터 전송용이 아닌 전력 전달을 목적으로 설계된 전력선을 매체로 이루어지기 때문에 상당한 잡음과 감쇠 특성을 보이며 또 전력선 topology와 부하의 변화에 따라 전달 함수(transfer function)의 변화도 심하다. 이러한 열악한 채널 특성을 극복하기 위해 전력선 채널에 관한 많은 연구가 진행되고 있으며 그 중에서도 채널 모델링 연구가 활발하게 진행되고 있다. 채널 모델링은, 변복조 방식, 채널 코딩(coding), 커플링(coupling), 필터링(filtering) 등의 적극적인 채널 극복 방안으로서 제시되는 기술을 적용함에 있어서 상당히 중요하다. 본 논문에서는, 채널 모델링 기법으로 제시되고 있는 방식인, 전달 함수 특성과 여러 가지 잡음 특성을 결합한 통계적 모델링 방식[l]을 통해 전력선 채널 모델을 구현하여 실측치와 비교 검토하고, 또 모델링을 통해 얻어지는 파라미터(parameter)를 통해 채널 정보를 효과적으로 Data Base화 할 수 있는 방안에 대해 연구하였으며, 이 Data Base의 활용 방안을 모색하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.213.2-213.2
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• 2015

모바일 기기의 성장세로 인해 낸드 플래시 메모리에 대한 수요가 급격히 증가하면서 높은 집적도의 소자에 대한 요구가 커지고 있다. 그러나 기존의 MOSFET 구조의 소자는 비례 축소에 의한 게이트 누설 전류, 셀간 간섭, 단 채널 효과 같은 여러 어려움에 직면해 있다. 특히 트윈 실리콘 나노 와이어 전계 효과 트랜지스터 (TSNWFETs)는 소자의 크기를 줄이기 쉬우며 게이트 비례 축소가 용이하여 차세대 메모리 소자로 각광받고 있다. 그러나 TSNWFETs의 공정 방법과 실험적인 전기적 특성에 대한 연구는 많이 이루어 졌지만, TSNWFETs의 전기적 특성에 대한 이론적인 연구는 많이 진행되지 않았다. 본 연구는 직경의 크기가 다른 나노 와이어를 사용한 TSNWFETs의 전기적 특성에 대해 이론적으로 계산하였다. TSNWFETs과 실리콘 나노 와이어를 사용하지 않은 전계 효과 트랜지스터(FET)를 3차원 시뮬레이션 툴을 이용하여 계산하였다. TSNWFETs와 FETs의 드레인 전류와 문턱전압 이하 기울기, 드레인에 유기된 장벽의 감소 값, 게이트에 유기된 드레인 누설 전류 값을 이용하여 전류-전압 특성을 계산하였다. 이론적인 결과를 분석하여 TSNWFETs의 스위칭 특성과 단 채널 효과를 최소화하는 특성 및 전류 밀도를 볼 수 있었으며, 나노 와이어의 직경이 감소하면 증가하는 드레인에 유기된 장벽의 감소를 볼 수 있었다.