• Journal of Convergence for Information Technology
• /
• v.11 no.7
• /
• pp.104-110
• /
• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
• /
• v.11 no.3
• /
• pp.177-187
• /
• 2016

The purpose of this study is to look into the influence of salesperson's human networking and knowledge on its job in an insurance company in its performances and to suggest how to effectively manage and develop salespersons. For this study, 305 salespersons participated in a questionnaire survey and we used T-TEST to analyze the data. The results are as follows. Its performance is positively influenced by salesperson's networking and knowledge on its job. In term of moderating effect on the attitude for its job, making efforts to organize networking was rejected, however the attitude for retaining their networking positively affected to the performance. As a result, the higher the level of salesperson's knowledge and networking is the higher its performance. To increase competitiveness, an insurance company has a strategy for the support to organize networking and the training of salespersons to become high performers.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.4
• /
• pp.805-811
• /
• 2012

In this paper, movement of conduction path has been analyzed for electron distribution in the channel of double gate(DG) MOSFET. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. DGMOSFETs have the adventage to be able to reduce short channel effects due to improvement for controllability of current by two gate voltages. Since short channel effects have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. Also transport characteristics have been influenced on the deviation of electron distribution and conduction path. In this study, the influence of electron distribution on conduction path has been analyzed according to intensity and distribution of doping and channel dimension.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.1
• /
• pp.30-37
• /
• 2011

In this paper, we propose a fast ICI suppression algorithm with adaptive channel estimation for the LTE-Advanced uplink system. In order to effectively remove phase noise and carrier frequency offset at time varying channel, we use the comb type pilot. The purpose is to improve performance by reducing computational complexity than conventional PNFS(Phase Noise & Frequency offset Suppression) algorithm. We reduce computational complexity by decreasing overlapping computation or unnecessary computation at conventional PNFS algorithm. Also, we propose an effective channel estimation method. We estimate and compensate multipath channel through the proposed adaptive channel estimation method. The BER performance of the proposed method is better about 0.5 dB than the conventional method at the Vehicular A channel.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.7
• /
• pp.1311-1316
• /
• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.11
• /
• pp.2643-2648
• /
• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Information Systems Review
• /
• v.20 no.4
• /
• pp.59-78
• /
• 2018

With the advent of the various device types and marketing communication, customer's search and purchase behavior have become more complex and segmented. However, extant research on multichannel marketing effects of the purchase funnel has not reflected the specific features of device User Interface (UI) and User Experience (UX). In this study, we analyzed the marketing channel effects of multi-device shoppers using a unique click stream dataset from global online retailers. We examined device types that activate online shopping and compared the differences between marketing channels that promote visits. In addition, we estimated the direct and indirect effects on visits and purchase revenue through customer's accumulated experience and channel conversions. The findings indicate that the same customer selects a different marketing channel according to the device selection. These results can help retailers gain a better understanding of customers' decision-making process in multi-marketing channel environment and devise the optimal strategy taking into account various device types. Our empirical analyses yield business implications based on the significant results from global big data analytics and contribute academically meaningful theoretical framework using an economic model. We also provide strategic insights attributed to the practical value of an online marketing manager.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.446-446
• /
• 2012

최근 반도체 칩의 트랜지스터 집적화 기술이 발달됨에 따라 dynamic random access memory(DRAM)의 memory cell 영역을 작게 만들어야 하는 문제가 제기되고 있다. 이러한 문제점을 해결하기 위해서 대체 기술이 끊임없이 연구되고 있는 가운데 하나의 트랜지스터와 하나의 캐패시터로 구성된 기존의 DRAM에서 캐패시터가 없이 하나의 트랜지스터만으로 이루어진 1T-DRAM 소자의 연구가 활발히 진행되고 있다. 이는 기존 DRAM의 구조에 비해 캐패시터가 필요하지 않아 복잡한 공정이 줄어들어 소자 제작이 용이하며, 더 높은 집적도를 구현할 수 있는 장점이 있다. 일반적인 planar 타입의 1T-DRAM의 경우 소스 및 드레인과 기판과의 접합면에서 누설 전류가 큰 특징을 가지며 소자의 집적화에 따른 단 채널 효과가 발생하게 되는데, 본 연구에서는 이러한 문제점을 해결하기 위해서 유효 채널 길이를 늘려 단 채널 효과에 의한 영향을 감소시키고, 소스 및 드레인과 기판과의 접합면을 줄여 누설 전류를 줄일 수 있는 recessed 채널 타입의 1T-DRAM을 제작하였다. 1T-DRAM의 메모리 구동방법에는 여러 가지가 있는데 본 연구에서는 impact ionization (II)을 이용한 방법과 gate induced drain leakage (GIDL)을 이용한 방법을 사용하여 1T-DRAM의 채널구조에 따라 어떠한 구동방법이 더 적합한지 평가하였고, 그 결과 recessed 채널 1T-DRAM의 동작은 II 에 의한 측정 방법이 더 적합한 것으로 보여졌다.

• Journal of Broadcast Engineering
• /
• v.5 no.1
• /
• pp.130-138
• /
• 2000

The paper describes a push system, a broadcasting system in the internet, which is developed for internet and intranet use. In this paper, we carried out research on the method to support the large number of users in the intranet environment. Particularly the paper analyzes the effects on the network traffic according to the number of the user connected to the push system and the frequency of the connections when push servers are distributed over the intranet. Push system described here uses two different kinds of channels, common channel and local channel. Common channel is the channel to be replicated among the push servers in the intranet. This paper shows that the method using the common channel synchronization is efficient in supporting the large number of intranet users. We introduce an algorithm to make the interconnections between channels efficiently amongpush servers distributed over the intranet.

• The KIPS Transactions:PartC
• /
• v.15C no.4
• /
• pp.263-272
• /
• 2008

Recently, WiBro has been developed to efficiently support real-time broadcasting with wireless system. MBS (Multicast Broadcast Service) based on WiBro has numerous applications such as DMB. Since the current MBS uses only common channel managed by scheduling, it cannot effectively support many users at the same time. This paper proposes a new counting scheme with which the channel mode can be properly switched between common channel and dedicated channel. It thus allows efficient use of limited radio resource in WiBro for the MBS.