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http://dx.doi.org/10.6109/jkiice.2012.16.4.805

Movement of Conduction Path for Electron Distribution in Channel of Double Gate MOSFET  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.4, 2012 , pp. 805-811 More about this Journal
Abstract
In this paper, movement of conduction path has been analyzed for electron distribution in the channel of double gate(DG) MOSFET. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. DGMOSFETs have the adventage to be able to reduce short channel effects due to improvement for controllability of current by two gate voltages. Since short channel effects have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. Also transport characteristics have been influenced on the deviation of electron distribution and conduction path. In this study, the influence of electron distribution on conduction path has been analyzed according to intensity and distribution of doping and channel dimension.
Keywords
DGMOSFET; doping distribution; Poisson equation; DIBL; short channel effect; conduction path;
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Times Cited By KSCI : 1  (Citation Analysis)
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