• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.1
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• pp.49-54
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• 2013

Japan and South Korea since 2004 until now for the broadcast channel interference, by measuring the ongoing conflict are expected to prepare for the future, but Korea's preparation are not enough. In this study, it is pointed that cause of the interference through channel environmental analysis, and effective application of propagation prediction model was carried out between neighboring countries. Between Korea and Japan, radio duct occurs on hold due to changes in the refractive gradient, and comfirmed occurrence of broadcasts interference. The results are presented that 1% time variable, -91.80 [N-units/km], 10% time variable, -43.92 [N-units/km], 50% time variable, -586.19 [N-units/km], for effective refractive gradient. Proposed refractive gradient could contribute to actual radio propagation prediction.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.6
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• pp.504-511
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• 2016

In this paper, the method is proposed that the equivalent result can be obtained by compensating the variation of gain and phase in the comparison with the result of near-field measurement which is obtained in the steady state, although the gain and phase variation of rx-channels occurred in the near-field rx-measurement of digital active phased array antenna. The proposed concept has the time section for monitoring the state of the rx-channels through the calibration path in the measurement timeline, and is the method for compensating the variation of state. For validating the proposed method, the fabricated X-band digital active phased array antenna and the planar near-field measurement facility is utilized. The proposed method is validated in the comparison with the compensated pattern which the unstable state of rx-channels is calibrated and the reference pattern obtained under the steady state of the rx-channels.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.9-16
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• 2000

MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.2C
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• pp.238-246
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• 2004

In this paper, an estimator that take advantages of time and frequency correlation within an OFDM symbol is investigated. OFDM systems using the proposed estimator can be very effective in detecting signals under non-sampled space and time-varying channels. Also, under same complexity, the proposed estimator outperforms the previously proposed estimator. Since even if there are no assumption about channel correlation, the linear interpolation method instead of optimal interpolation using correct channel correlation is proposed in case the receiver does not know the channel correlation function in time domain. Therefore the proposed channel estimator help improving the performance of OFDM systems under non-sampled spaced and fast time-varying channels.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.9A
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• pp.1525-1534
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• 2001

국내 통신사업자들이 xDSL 등 초고속 인터넷 액세스 서비스를 왜곡된 요금구조로 경쟁적으로 보급함에 따라 급속히 확산되고 있으나, 엄밀히 원가를 감안한다면 여전히 AO/DI는 인터넷 트래픽 폭증으로 인한 전기통신망의 과부하를 통신사업자가 경제적이며 효과적으로 대처할 수 있는 현실적인 대안이라 할 수 있다. 본 논문은 AO/DI의 동적 채널 할당 및 해지에 있어서 VIA가 권고한 정책보다 효율적으로 대역폭을 할당, 해지할 수 있는 알고리즘을 제안한다. 관찰 시점까지의 누적된 트래픽의 양과 변화를 감안하여 평균 트래픽과 분산을 추정함으로써 트래픽의 변화에 적응하여 채널 할당, 해지 시점을 결정할 수 있으며 트래픽 특성에 따라 매개 변수의 조정을 통하여 D 채널, B 채널의 이용률을 제어할 수 있고 평균 대기시간 등의 성능을 최적화할 수 있음을 보인다. 또한, 이를 기초로 응용 프로토콜을 감지하여 응용이 갖는 고유의 트래픽 특성과 요구사항에 적합한 채널 할당/해지 방안도 제시한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.447-447
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• 2013

최근 전자산업의 발전으로 차세대 디스플레이 소자로 산화물반도체가 주목받고 있다. 산화물 반도체는 저온공정, 높은 이동도 및 투과율을 가지기 때문에 이러한 공정이나 물성 측면에 있어 기존의 a-Si, LTPS 등을 대채할 만한 소자로서 연구가 활발이 이루어지고 있다. 특히 고해상도 및 고속구동이 진행됨에 따라 높은 이동도의 필요성이 대두되고 있다. 본 연구에서는 IGZO 산화물 반도체 박막트랜지스터의 이동도 개선을 위해 나노입자를 사용하였다. 게이트전극으로 사용된 Heaviliy doped P-type Si 기판위에 200 nm의 SiO2 절연층을 성장시킨 후, 채널로 작동하기 위한 IGZO 박막을 증착하기 전에 10~20 nm 크기의 니켈, 금 나노입자를 부착시켰다. 열처리 온도는 $350^{\circ}C$, 90분동안 진행하였고, 100 nm의 알루미늄 전극을 증착시켜 TFT 소자를 제작하였다. TFT 소자가 동작할 시, IGZO 박막 내부의 전자들은 게이트 전압으로 인해 하부로 이동하여 채널을 형성, 동시에 드레인 전압으로 인한 캐리어들의 움직임으로 인해 소자가 동작하게 된다. 본 연구에서는 채널이 형성되는 계면 부근에 전도성이 높은 금속 나노입자를 부착시켜 다수 캐리어인 전자가 채널을 통과할 때 전류흐름에 금속 나노입자들이 기여하여 전기적 특성의 변화에 어떠한 영향을 주는지 연구하였다. 반응시간을 조절하여 기판에 붙는 나노입자의 밀도 변화에 따른 특성과 다양한 크기(5, 10, 20 nm)를 갖는 금, 니켈 나노입자를 포함한 IGZO TFTs 소자를 제작하여 전달특성, 출력특성의 변화를 비교하였고, 실질적인 채널길이의 감소효율과 캐리어 이동도의 변화를 비교분석 하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.835-837
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• 2012

In this paper, we have been analyzed conduction path by device parameter of double gate(DG) structure that have top gate and bottom gate. The Possion equation is used to analytical. The change of conduction path have been investigated for various channel lengths, channel thickness and gate oxide thickness using this model, given that these parameters are very important in design of DGMOSFET. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.