• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.39 no.2
• /
• pp.29-33
• /
• 2002

Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.101-104
• /
• 2004

We have fabricated a channel of superconducting flux flow transistor(SFFT) using the voltage-biased atomic force microscope(AFM) TiO tip and performed numerical simulations for the SFFT controlled by the magnetic field with a control current. The critical current density in a channel of the fabricated SFFT was decreased with the applied current by a control line. By comparing the measured with theoretical results, we showed a possibility of fabrication of an SFFT with a nano-channel using AFM anodization process technique.

• Journal of the Korean Ceramic Society
• /
• v.40 no.5
• /
• pp.475-480
• /
• 2003

Nanocomposite of Au doped ZrO$_2$ films was prepared, which could be used as non-linear optic materials, selective absorption and transmission films. After heat treatment of prepared thin film by dip-coating method, the characteristics were investigated by X-ray diffraction, UV-VIS Spectrometer, Atomic Force Microscopy (AFM) and Scanning Electron Microscope (SEM). Film thickness was about 150 nm, the Au particle size was 15~35 nm. The thin film had a smooth surface roughness about 1.06 nm. Nonlinearity optics was found that films showed absorption peak at 600~650 nm visible region by plasma resonance of Au metal particles.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.124.1-124.1
• /
• 2015

$TiO_2$는 화학적으로 안정하며, 인체에 무해하고, 살균특성 및 각종 유기물에 효과적인 분해력, 안정성 및 내구성들의 장점으로 인해 널리 사용되는 광촉매제로 알려져 있다. 최근 $TiO_2$는 유리에 접촉되는 물방울의 표면장력을 크게 하여 접촉각을 10도 이하로 유지시켜줌으로써 비가 오거나 청소를 위해 살수를 할 때 유리면에 얇은 수막을 형성시켜 광촉매 기능으로 분해된 유기질의 오염물질 및 유리표면과의 결합력이 낮아진 무기질의 오염원을 쉽게 제거해 주는 특성들로 인해 오염방지 코팅제로 많이 활용되고 있다. 그러나, $TiO_2$는 빛이 조사될 경우에만 친수특성을 나타낸다는 단점들이 있어 본 연구에서는 $TiO_2$에 $SnO_2$를 혼합한 박막을 증착하여 신뢰성을 향상시키고자 하였다. 또한 기존 $TiO_2$ 코팅막들이 주로 spray 또는 blade 방식으로 코팅되어 코팅된 막이 낮은 균일성과 내구성을 가지므로 본 연구에서는 RF-Magnetron Sputtering 방법을 이용하여 유리 기판위에 $(TiO_2)50(SnO_2)50$ 박막을 증착하였다. 제작된 박막은 유리에 적용될 경우를 감안해 광학적 특성을 분석하기 위해 Uv-vis Spectrometer 장비를 이용하여 투과율을 분석하였으며, $SnO_2$ 혼합에 따른 구조적 특성으로 주사전자현미경(Scanning Electric Microscope, SEM)을 통하여 박막의 결정상을 분석하였으며, 주사탐침현미경(Atomic Force Microscope, AFM)을 사용하여 표면 거칠기를 관찰하였다. 또한 광촉매 특성을 통한 친수성을 알아보기 위해 UV 램프를 사용한 후 접촉각을 측정하였다.

• Journal of the Korean Vacuum Society
• /
• v.22 no.6
• /
• pp.285-290
• /
• 2013

Epitaxial graphene on metal substrates provides excellent platforms to study its atomic and electronic structures, and can be grown either by surface segregation of carbon or by chemical vapor deposition. The growth behaviors of the two methods, however, have not been directly compared each other. Here, we studied domain structures of graphene grown by three different methods, surface segregation, post-annealing with adsorbed ethylene, and high-temperature dose of ethylene, using scanning tunneling microscopy. The first two methods resulted in graphene regions with areas of $100nm^2$, whereas the third method showed large area graphene (> $10^4nm^2$) with regular hexagonal Moire patterns, implying that high-temperature dose of ethylene is preferable for further studies on graphene such as additional growth of organic molecules.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.2 s.35
• /
• pp.149-154
• /
• 2005

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.1228-1231
• /
• 2005

This paper reports about the development of scanning probe microscopy (SPM) tip with multi-walled carbon nanotube (MWNT). For making a carbon nanotube (CNT) modified tips, AC electric field which causes the dielectrophoresis was used for alignment and deposition of CNTs to the metal coated SPM tip. By dropping the MWNT solution and applying an electric field between an SPM tip and an electrode, MWNTs which were dispersed into a diluted solution were directly assembled onto the apex of the SPM tips due to the attraction by the dielectrophoretic force. In this paper, we investigate experimental conditions about the alignment of the CNT to tip axis according to the change of the angle between a tip and an electrode. Experimental results are presented, and then fabricated CNT tips are showed and measurement results for 15nm gold particles are compared with that of the conventional silicon tip.

• Korean Journal of Materials Research
• /
• v.13 no.9
• /
• pp.606-612
• /
• 2003

Surface and mechanical properties of thin films with submicron thickness was characterized by nanoindentation with Berkovich and Vickers tips, and scanning probe microscopy. Nanoindention was made in a depth range of 15 to 200 nm from the surface by applying tiny force in a range from 150 to $9,000 \mu$N. Stiffness, contact area, hardness, and elastic modulus were determined from the force-displacement curve obtained. Reliability was first tested by using fused quartz, a standard sample. Elastic modulus and hardness values of fused quartz measured were the same as those reported in the literature within two percent of error. Mechanical properties of ITO thin film were characterized in a depth range of 15∼200nm. As indentation depth increased, elastic modulus and hardness decreased by substrate effect. Ion beam deposited DLC thin films were indented in a depth range of 40∼50 nm. The results showed that the DLC thin film using benzene and bias voltage 0∼-50 V has elastic modulus and hardness value of 132 and 18 GPa respectively. Pure DLC thin films showed roughnesses lower than 0.25 nm, but silicon-added DLC thin films showed much higher roughness values, and the wavy surface morphology.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.1
• /
• pp.11-16
• /
• 2008

Confocal scanning microscopy is a widely used technique for three dimensional measurements because it is characterized by high resolution, high SNR and depth discrimination. Generally an image is generated by moving one optical probe that satisfies the confocal condition on the specimen. Measurement speed is limited by movement speed of the optical probe; scanning speed. To improve measurement speed we increase the number of optical probes. Specimen region to scan is divided by optical probes. Multi-point information each optical probe points to can be obtained simultaneously. Therefore image acquisition speed is increased in proportion to the number of optical probes. And multiple optical probes from red, green and blue laser sources can be used for color imaging and image quality, i.e., contrast, is improved by adding color information by this way. To conclude, this technique contributes to the improvement of measurement speed and image quality.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.4
• /
• pp.159-164
• /
• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.