• Title/Summary/Keyword: 정상 자기 저항

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Giant Magnetoresistance Materials (거대자기저항 재료)

  • 이성래
    • Journal of the Korean Magnetics Society
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    • v.5 no.3
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    • pp.222-232
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    • 1995
  • 자기저항이란 외부 자기장에 의해 재료의 전기저항이 변화되는 현상을 일컫는다. Au와 같은 비자성도체 및 반도체 재료의 경우 외부에서 자기장이 가해지면 전도 전자가 Lorentz 힘을 받아 궤적이 변하므로 저항이 변화한다. 이러한 저항 변화 를 정상 자기저항(Ordinary Magnetoresistance, OMR)이라 하며 일반적으로 상당히 작은 저항의 변화를 나타낸다. 강자성도체 재료에서는 정상 자기저항 효과 외에도 부가적인 효과가 생긴다. 이는 스핀-궤도 결합에 기인한 효과로써 자기 저항은 강자성체의 자화용이축, 외부자계와 잔류간의 각도에 의존하며 이방성 자기저항(Anisotropic Magnetoresistance, AMR)이라 한다. AMR 비(%)는 일반적 으로 다음과 같이 정의된다. 즉 ${\Delta}{\rho}_{AMR}/{\rho}_{ave}=(\rho_{\|}-\rho_{T})/{\rho}_{ave}$로 여기서 $\rho_{\|}$는 자기장의 방향이 전류의 방향과 같을 때의 비저항 이고 $\rho_{T}$는 서로 수직일 때이며 ${\rho}_{ave}=(\rho_{\|}-\rho_{T})/3$이다. 기존의 MR 센서나 자기재생헤드(magnetic read head)에 사용되는 퍼머로이계 합금의 AMR 비는 상온에서 약 2% 정도의 저항변화를 보인다.

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Annealing Effects on Electron Transport properties of Nanostructured Thin Film (Annealing에 의한 나노구조 박막의 전기적 특성 연구)

  • Kouh, Tae-Joon
    • Journal of the Korean Magnetics Society
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    • v.16 no.1
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    • pp.98-101
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    • 2006
  • Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

Ordinary Magnetoresistance of an Individual Single-crystalline Bi Nanowire (자발 성장법으로 성장된 단결정 Bi 단일 나노선의 정상 자기 저항 특성)

  • Shim, Woo-Young;Kim, Do-Hun;Lee, Kyoung-Il;Jeon, Kye-Jin;Lee, Woo-Young;Chang, Joon-Yeon;Han, Suk-Hee;Jeung, Won-Young;Johnson, Mark
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.166-171
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    • 2007
  • We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.

The Effect of Additives on the Magnetic Properties of Low-Loss Mn-Zn Ferrites (첨가물이 저손실 Mn-Zn 페라이트의 자기적 성질에 미치는 영향)

  • 권태석;김성수;엄덕수;이우성;김동훈
    • Journal of the Korean Magnetics Society
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    • v.5 no.3
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    • pp.197-202
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    • 1995
  • 고주파용 전원의 필요성이 대두되면서 고주파에서 낮은 자기손실을 가진 재료의 개발이 요구되고 있다. Mn-Zn 페라이트의 자기손실은 전기비저항의 증거나 소결시 미세구조의 제어로 줄일 수 있다. 본 연구에서는 연쇄고온합성법(Self-propagation High- temperature Synthesis)에 의해 제조된 $_Mn_{0.72}$Z $n_{0.22}$)$_{0.94}$ (F $e_{2}$ $O_{3}$)$_{1.06}$ 조성의 Mn-Zn페라이트에서 첨가물이 미세구조와 자기적 성질에 미치는 영향에 대해 조사하였다. $SiO_{2}$와 Ca $Co_{3}$의 복합첨가에 의해 미세구조의 미세화와 아울러 낮은 자기손실 특성을 얻을 수 있었다. 그러나 첨가 물의 과다 첨가시에는 비정상입자성장 조직이 나타났으며 자기적 성질이 현저히 저하 하였다. 전기비저항, 자기손실의 주파수 의존 결과에 근거하여 주된 자기손실기구 및 이에 미치는 첨가물 효과에 대해 논하였다.

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Magnetotransport Properties of MnGeP2 Films (MnGeP2 박막의 자기수송 특성)

  • Kim, Yun-Ki;Cho, Sung-Lae;J.B., Ketterson
    • Journal of the Korean Magnetics Society
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    • v.19 no.4
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    • pp.133-137
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    • 2009
  • $MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.

Magnetic and CMR Properties of Sulphospinel ZnxFe1-xCr2S4 (Spinel계 유화물 ZnxFe1-xCr2S4의 CMR 특성과 자기적 성질)

  • Park, Jae-Yun;Bak, Yong-Hwan;Kim, Kwang-Joo
    • Journal of the Korean Magnetics Society
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    • v.15 no.2
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    • pp.137-141
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    • 2005
  • The CMR properties and magnetic properties of sulphospinels $Zn_xFe_{1-x}Cr_2S_4$ have been explored by X-ray diffraction, magnetoresistance measurement, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures in the range of x=0.05, 0.1, 0.2 are cubic at room temperature. Magnetoresistance measurement indicates that these system is semiconducting below about 160 K. The temperature of maximum magnetoresistance is almost consistent with Curie temperature. The Zn substitutions for Fe occur to increase the Jahn-Teller relaxation and the electric quadrupole shift. CMR properties could be explained with Jahn-Teller effect, and half-metallic electronic structure, which is different from both the double exchange interactions of manganite La-Ca-Mn-O system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

Mössbauer Studies on Magnetoresistance in Chalcogenide Fe0.9M0.1Cr2S4 (M=Co, Ni, Zn) (Chalcogenide Fe0.9M0.1Cr2S4(M=Co, Ni, Zn)의 자기저항에 관한 Mössbauer 분광연구)

  • Park, Jae Yun;Lee, Byoung-Seob
    • Journal of the Korean Magnetics Society
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    • v.23 no.2
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    • pp.43-48
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    • 2013
  • The Jahn-Teller distortion of chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) have been investigated by M$\ddot{o}$ssbauer spectroscopy. The crystal structures of $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) are cubic spinel at room temperature. Magnetoresistance measurements indicate these system is conducting-semiconducting transistion around $T_C$. Below $T_C$, the asymmetric line broadening is observed and considered to be dynamic Jahn-Teller distortion. Isomer shift value of the samples at room temperature was about 0.5 mm/s, which means that charge state of Fe ions is ferrous in character. The Ni substitutions for Fe occur to increase the Jahn-Teller relaxation. CMR properties could be explained with magnetic polaron due to Jahn-Teller effect, which is different from both the double exchange interactions of manganite system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

On the Accurate Determination of Curie Temperature of Bulk Gadolinium (큐리온도 근방에서의 전기적, 자기적 성질변화를 이용한 강자성 가돌리늄의 큐리온도의 결정)

  • 이일수
    • Journal of the Korean Vacuum Society
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    • v.4 no.3
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    • pp.283-286
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    • 1995
  • 자화도와 비저항의 온도에 따른 변화를 측정함으로써 덩치 가돌리늄의 큐리온도를 정확히 결정하였다. 이 두 물리량은 큐리온도에서 비정상적인 특이성을 보여준다. 이들의 특이성에서 결정된 큐리온도의 값은 서로 1도 이내에서 잘 일치함을 보여주었다.

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32-Channel Bioimpedance Measurement System for the Detection of Anomalies with Different Resistivity Values (저항률이 다른 내부 물체의 검출을 위한 32-채널 생체 임피던스 측정 시스템)

  • 조영구;우응제
    • Journal of Biomedical Engineering Research
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    • v.22 no.6
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    • pp.503-510
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    • 2001
  • In this paper. we describe a 32-channel bioimpedance measurement system It consists of 32 independent constant current sources of 50 kHz sinusoid. The amplitude of each current source can be adjusted using a 12-bit MDAC. After we applied a pattern of injection currents through 32 current injection electrodes. we measured induced boundary voltages using a variable-gain narrow-band instrumentation amplifier. a Phase-sensitive demodulator. and a 12-bit ADC. The system is interfaced to a PC for the control and data acquisition. We used the system to detect anomalies with different resistivity values in a saline Phantom with 290mm diameter The accuracy of the developed system was estimated as 2.42% and we found that anomalies larger than 8mm in diameter can be detected. We Plan to improve the accuracy by using a digital oscillator improved current sources by feedback control, Phase-sensitive A/D conversion. etc. to detect anomalies smaller than 1mm in diameter.

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Electrical and Magnetic Properties of Magnetite Powder during a Verwey Transition (Verwey 전이와 마그네타이트의 전기적 및 자기적 특성)

  • Yoon, Sunghyun
    • New Physics: Sae Mulli
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    • v.68 no.12
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    • pp.1302-1307
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    • 2018
  • The crystallographic, electrical and magnetic behaviors of magnetite powder in the vicinity of its Verwey transition were investigated in this study. Magnetite was prepared by synthesizing a nanoparticle precursor and then annealing it at $800^{\circ}C$ for 1 h under a dynamic vacuum. Crystallographic and morphology analyses were done by using scanning electron microscope (SEM) and X-ray diffraction (XRD). The electrical and the magnetic properties were examined by using $M{\ddot{o}}ssbauer$ spectroscopy, vibrating sample magnetometer (VSM) and resistivity measurement. Both the magnetic moment and the resistivity showed discontinuous changes at the Verwey transition temperature ($T_V$). The temperature dependence of magnetic anisotropy constant showed a monotonic decrease with increasing temperature, with slight dip near $T_V$. $M{\ddot{o}}ssbauer$ spectra showed the superposition of two sextets, one from the tetrahedral (A) and the other from the octahedral (B) sites. The results revealed that identical charge states existed in the B site at temperatures both above and below $T_V$. A coordination crossover resulted in a transition from an inverse to a normal spinel at or close to $T_V$.