• Title/Summary/Keyword: 접합 노드

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Temperature Effect on Impedance-based Damage Monitoring of Steel-Bolt Connection using Wireless Impedance Sensor Node (무선 임피던스 센서노드를 이용한 강-볼트 접합부의 임피던스기반 손상모니터링에 미치는 온도 영향)

  • Hong, Dong-Soo;Kim, Jeong-Tae
    • Journal of Ocean Engineering and Technology
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    • v.26 no.1
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    • pp.27-33
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    • 2012
  • This paper presents the effect of temperature on the impedance-based damage monitoring of steel-bolt connections using wireless impedance sensor nodes. In order to achieve the objective, the following approaches are implemented. First, a temperature-compensated damage monitoring scheme that includes a temperature compensation model and damage detection method is described. The temperature compensation model is designed by analyzing the linear regressions between the temperatures and impedance signatures. The correlation coefficient of the impedance signatures is selected as the damage index to monitor the damage occurrence in the target structures. Second, a wireless impedance sensor node is described for the design of the hardware components and embedded software. Finally, the performance of the temperature-compensated impedance-based damage monitoring scheme is evaluated for detecting a loose bolt in the steel-bolt connections on a lab-scale steel girder under various temperatures.

An Structural Design for Cyclone Tower's Connections Using Diagrid System (다이아그리드 구조시스템의 접합부개발과 성능평가)

  • Lee, Se-Jung;Lee, Seong-Hui;Kim, Jin-Ho;Choi, Sung-Mo
    • Journal of Korean Association for Spatial Structures
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    • v.10 no.2
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    • pp.105-115
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    • 2010
  • Recently, High-rise building are irregular-shaped to be city landmarks and function as vertical cities to enable the efficient use of land. 3T (Twisted, Tilted & Tapered) designs are being suggested for irregular buildings and studies to develop new structural system have been actively made to satisfy slender shape ratio. In diagrid system, not only gravity load but also lateral load is delivered based on the triangular shape of diagrid, so most of columns are eliminated. Because shearing force is delivered by the axial behavior (tensile/compressive) of diagrid to minimize shearing deformation, the system is more applicable to irregular buildings than existing system where shearing force is delivered by the columns. In this study, the process of selecting connection details and the structural safety of the selected details are verified using the finite element analysis with focus given to the construction overview of the Cyclone Tower. However, the relersed methods of stress concentration are suggested and the performance of stress concentration relieves that it's suggested for the appropriate cap plate thickness and extended length.

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X-band Tx and Rx Filters of Earth Terminals for Satellite Communications (위성통신 단말용 X 대역 송수신 필터)

  • Kwak, Changsoo;Uhm, Manseok;Jin, Bongcheol;Seo, Hakkeum;Suh, Joonsuk;Yom, Inbok
    • Journal of Satellite, Information and Communications
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    • v.9 no.2
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    • pp.52-57
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    • 2014
  • In this paper, designs and test results of X-band Tx and Rx filters for satellite communications are presented. The passbands are 7.9 ~ 8.4 GHz and 7.25 ~ 7.75 GHz for the Tx filter and the Rx filter respectively. Both of the filters require very high rejection performance between the two passbands. In order to make these filters in an in-line type, non-resonating node method was adopted and E-plane junction was used for the non-resonating node. Design procedures of circuit model design and full-wave electromagnetic model design are described. The test results show that all the performances meet requirements including temperature variations and the sizes are smaller than those of domestic commercial filters by about 30 ~ 40 %.

Design of an NMOS-Diode eFuse OTP Memory IP for CMOS Image Sensors (CMOS 이미지 센서용 NMOS-Diode eFuse OTP 설계)

  • Lee, Seung-Hoon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.2
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    • pp.306-316
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    • 2016
  • In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

Numerical Evaluation on Bending Stiffness of Nodal Connection Systems in the Single Layered Grid Considering Bolt Clearance (볼트 유격을 고려한 단층 그리드 노드 접합 시스템의 휨 강성에 대한 구조 해석적 평가)

  • Hwang, Kyung-Ju
    • Journal of Korean Association for Spatial Structures
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    • v.20 no.4
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    • pp.141-147
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    • 2020
  • Single-layered grid space steel roof structure is an architectural system in which the structural ability of the nodal connection system greatly influences the stability of the entire structure. Many bolt connection systems have been suggested to enhance for better construct ability, but the structural behavior and maximum resistance of the connection system according to the size of bolt clearance play were difficult to identify. In particular, the identification of bending stiffness of the connection system is very important due to the characteristics of shell structures in which membrane stresses based on bending force effect significantly. To identify effective structural behavior and maximum bearing force, four representative nodal connection systems were selected and nonlinear numerical analysis were performed. The numerical analysis considering the size of the bolt clearance were performed to investigate structural behavior and maximum values of the bending force. In addition, the type of effective nodal connection system were evaluated. As a result, the connection system, which has two shear plane, represented high bending stiffness.

Investigation of a Thermal Stress for the Unit Cell of a Solid Oxide Fuel Cell (고체산화물 연료전지 단위셀의 열응력에 관한 연구)

  • Kim, Young-Jin;Park, Sang-Kyun;Roh, Gill-Tae;Kim, Mann-Eung
    • Journal of Advanced Marine Engineering and Technology
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    • v.35 no.4
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    • pp.414-420
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    • 2011
  • Thermal stress analysis of a planar anode-supported SOFC considering electrochemical reactions has been performed under operating conditions where average current density varies from 0 to 2000 $A/m^2$. For the case of the 2000 $A/m^2$ operating condition, Structural stress analysis based on the temperature distributions obtained from the CFD analysis of the unit cell has also been done. From this one way Fluid-Structure Interaction(FSI) analysis, Maximum Von-Mises stress under negligible temperature gradient fields occurs when cell components are perfectly bonded. The maximum stress of the electrolyte, cathode and anode in a unit cell SOFC is 262.58MPa, 28.55MPa and 15.1MPa respectively. The maximum thermal stress is critically dependent on static friction coefficient.

Development of Convergent IOT Managing Mindmap System (마인드맵 기반의 사물인터넷 융합 관리 시스템의 개발)

  • Ho, Won;Lee, Dae-Hyun;Bae, Ho-Chul
    • Journal of the Korea Convergence Society
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    • v.10 no.1
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    • pp.45-51
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    • 2019
  • The use of the Internet of things plays a major role in the Fourth Industrial Revolution, and a series of tasks of accumulating, converging, analyzing and reusing various data and services becomes very important. Because the pace and scope if the paradigm shift in Fourth Industrial Revolution is so rapid and unpredictable, the development and utilization of a system to fulfill this role for IOT are urgently required. In this paper, we introduce the Web-based IOT management system, which connects the IOT with OKMindmap, which is a domestic open source software and service, and the Node-RED service. This system combines the advantages of OKMindmap with the advantages of Node-RED, which is capable of visual component based programming, so that it can easily and flexibly connect the IOT based on Web browsers, and various data and services can be integrated and linked. We developed a camera module, a temperature and humidity sensor module, and the motor control module in Raspberry PI basically, and tested the operation successfully. We plan to extend the IOT component gradually by using Arduino and System On Chip.

Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor) (문턱전압 조절 이온주입에 따른 MCT (MOS Controlled Thyristor)의 스위칭 특성 연구)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jong-Il;Kwak, Changsub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.69-76
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    • 2016
  • Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

Analysis of Impact Characteristics of Bonded Dissimilar Materials for Center Pillar (센터필라 적용을 위한 이종 접합강의 충격 특성 해석에 관한 연구)

  • Nam, Ki-Woo;Park, Sang-Hyun;Yoo, Jung-Su;Lee, Sang-Mun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.8
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    • pp.929-934
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    • 2012
  • This study was carried out to analyze the dynamic characteristics of laser tailor-welded blanks (TWBs) made of dissimilar materials. The analysis was performed using Hyper Works 10.0 with Solver LS-DYNA v.971. 2D-Shell was used as the modeling element, and the number of elements and nodes was 35,641 and 36,561, respectively. The impact speed was 10 km/h. To analyze the impact characteristics according to the height of the weld line for the upper and lower parts of the center pillar, the length of the lower part was set as 300 and 400 mm. When the lower part was made of SPFC980 steel with a length of 300 mm, the deformation was the smallest and the absorbed energy of the impact force was the largest. On based the lower part of center pillar, the position of TWB shows the shorter and the better value. In other words, the performance depended on the proportion of the upper part made of high-strength SABC1470 steel. A lower part made of SPFH590 steel showed large deformation. In contrast, a lower part made of SPFC980 steel showed significantly lesser deformation. Therefore, the impact performance of a lower part made of SPFC980 steel with a length of 300 mm showed the best analysis result.

A design on low-power and small-area EEPROM for UHF RFID tag chips (UHF RFID 태그 칩용 저전력, 저면적 비동기식 EEPROM 설계)

  • Baek, Seung-Myun;Lee, Jae-Hyung;Song, Sung-Young;Kim, Jong-Hee;Park, Mu-Hun;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.12
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    • pp.2366-2373
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    • 2007
  • In this paper, a low-power and small-area asynchronous 1 kilobit EEPROM for passive UHF RFID tag chips is designed with $0.18{\mu}m$ EEPROM cells. As small area solutions, command and address buffers are removed since we design asynchronous I/O interface and data output buffer is also removed by using separate I/O. To supply stably high voltages VPP and VPPL used in the cell array from low voltage VDD, Dickson charge pump is designed with schottky diodes instead of a PN junction diodes. On that account, we can decrease the number of stages of the charge pump, which can decrease layout area of charge pump. As a low-power solution, we can reduce write current by using the proposed VPPL power switching circuit which selects each needed voltage at either program or write mode. A test chip of asynchronous 1 kilobit EEPROM is fabricated, and its layout area is $554.8{\times}306.9{\mu}m2$., 11% smaller than its synchronous counterpart.