• Title/Summary/Keyword: 전하중

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A Simulation of Advanced Multi-dimensional Isotachophoretic Protein Separation for Optimal Lab-on-a-chip Design (최적화된 Lab-on-a-chip 설계를 위한 향상된 다차원 프로틴 등속영동 시뮬레이션)

  • Cho, Mi-Gyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.7
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    • pp.1475-1482
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    • 2009
  • In this paper, a computer simulation is developed for isotachophoretic protein separation in a serpentine micro channel for optimal lab on a chip design using 2D Finite Element Method. This 2D ITP model is composed of 5 components such as hydrochloric acid as Leader, caproic acid as terminator, acetic acid and benzoic acid as two proteins, and histindine as background electrolyte. The computer model is based on mass conservation equation for 5 components, charge conservation equation for electric potential, and electro neutrality condition for pH calculation. For the validation of the 2D spatial ITP model, the results are compared with the Simul5 developed by Bohuslav Gas Group. The simulation results are in a good agreement in a ID planar channel. This proves the precision of our model. The 2Dproteinseparation is conducted in a 2D curved channel for Lab on a chip design and dispersions of proteins are revealed during the electrophoretic process in a curved shape.

Analysis of Threshold Voltage and DIBL Characteristics for Double Gate MOSFET Based on Scaling Theory (스켈링 이론에 따른 DGMOSFET의 문턱전압 및 DIBL 특성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.1
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    • pp.145-150
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    • 2013
  • This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

Infrared Imaging and a New Interpretation on the Reverse Contrast Images in GaAs Wafer (GaAs 웨이퍼의 적외선 영상기법 및 콘트라스트 반전 영상에 대한 새로운 해석)

  • Kang, Seong-jun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.11
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    • pp.2085-2092
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    • 2016
  • One of the most important properties of the IC substrate is that it should be uniform over large areas. Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infrared techniques of inspection. In particular, a high spatial resolution, near infrared absorption method has been adopted to directly observe defects in semi-insulating GaAs. This technique, which relies on the mapping of infrared transmission, is both rapid and non-destructive. This method demonstrates in a direct way that the infrared images of GaAs crystals arise from defect absorption process. A new interpretation is presented for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in semi-insulating GaAs. The low temperature photoquenching experiment has demonstrated in a direct way that the contrast inverse images of GaAs wafers arise from both absorption and scattering mechanisms rather than charge re-distribution or local variation of bandgap.

Staggered Tunnel Barrier engineered Memory

  • Son, Jeong-U;Park, Gun-Ho;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.255-255
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    • 2010
  • 전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널 산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 기존의 TBM과 다른 형태의 staggered tunnel barrier를 제안한다. staggered tunnel barrier는 heterostructure의 에너지 밴드 구조 중 하나로 밴드 line up은 두 밴드들이 같은 방향으로 shift된 형태이다. 즉, 가전자대 에너지 장벽의 minimum이 한 쪽에 생기면 전도대 에너지 장벽의 maximum은 반대쪽에 생기는 형태를 갖는다. 이러한 밴드구조를 갖는 물질을 터널 산화막층으로 하게 되면 쓰기/지우기 속도를 증가시킬 수 있으며, 데이터 보존 능력 모두 만족할 수 있어 TBM의 터널 산화막으로의 사용이 기대된다. 본 연구에서 제작한 staggered TBM소자의 터널 산화막으로는 $Si_3N_4$/HfAlO (Hf:Al=1:3)을 사용하여 I-V(current-voltage), Retention, Endurance를 측정하여 메모리 소자로서의 특성을 분석하였으며, 터널 산화막의 제 1층인 $Si_3N_4$의 두께를 1.5 nm, 3 nm일 때의 특성을 비교 분석하였다.

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Highly Stable Graphene Field-effect Transistors using Inverse Transfer Method (역전사법을 활용한 고안정성 그래핀 기반 전계효과 트랜지스터 제작)

  • Lee, Eunho;Bang, Daesuk
    • Journal of Adhesion and Interface
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    • v.22 no.4
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    • pp.153-157
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    • 2021
  • Graphene, a two-dimensional carbon allotrope, has outstanding mechanical and electrical properties. In particular, the charge carrier mobility of graphene is known to be about 100 times higher than that of silicon, and it has received attention as a core material for next-generation electronic devices. However, graphene is very sensitive to environmental conditions, especially vulnerable to moisture or oxygen. It becomes a disadvantage in that the stability of the graphene-based electronic device, so various attempts are being made to solve this problem. In this work, we report a method to greatly improve the stability by controlling the surface energy of the polymer layer used for transferring the insulating layer of the graphene field-effect transistor. As the surface energy of the polymer used as the insulating layer was lowered, the stability could be improved by effectively controlling the adsorption of impurities in the atmosphere such as water molecules or oxygen.

Analysis of the Spectrum Characteristics of Etched Glass Surface by Incident Angle (입사각에 따른 에칭 기판의 분광특성분석)

  • Kim, Haemaro;Lee, Don-Kyu
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.1077-1081
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    • 2019
  • Lights that enter the surface of a solar cell cannot be absorbed inside all of the solar cells, and some of it is reflected off the surface of the substrate, resulting in loss. Because of this, many studies are underway to reduce reflective losses on the surface of substrates or to steam the generated charge inside the solar cell. In this paper, surface treatment for forming a rough surface by wet etching the surface of a glass substrate is advanced, and structural characteristics of the rough surface are analyzed. Then, spectral characteristics by changing the angle of the glass substrate to which light enters the company are analyzed. When the light entering the company is investigated on a etched surface, it is confirmed that the probability of re-absorbing the light inside the glass substrate by multiple reflection is increased. When entering the light while changing the angle of the glass substrate, the transmission and reflection performance of the light are not changed.

An ASIC Design for Photon Pulse Counting Particle Detection (광계수방식 물리입자 검출용 ASIC 설계)

  • Jung, Jun-Mo;Soh, Myung-Jin;Kim, Hyo-Sook;Han, AReum;Soh, Seul-Yi
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.947-953
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    • 2019
  • The purpose of this paper is to explore an ASIC design for estimating sizes and concentrations of airborne micro-particles by the means of integrating, amplifying and digitizing electric charge signals generated by photo-sensors as it receives scattered photons by the presence of micro-particles, consisting of a pre-amplifier that detects and amplifies voltage or current signal from photo-sensor that generates charges (hole-electron pairs) when exposed to visible rays, infrared rays, ultraviolet rays, etc. according to the intensity of rays; a shaper for shaping the amplified signal to a semi-gaussian waveform; two discriminators and binary counters for outputting digital signals by comparing the magnitude of the shaped signal with an arbitrary reference voltages. The ASIC with the proposed architecture and functional blocks in this study was designed with a 0.18um standard CMOS technology from Global Foundries and the operation and performances of the ASIC has been verified by the silicons fabricated by using the process.

Research on the magnetic confinement of laser-induced plasma (레이저 유도 플라즈마에 대한 자기장 감금의 영향 연구)

  • Eunjoo Hyeon;Yong H. Ghym
    • Journal of IKEEE
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    • v.28 no.1
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    • pp.38-45
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    • 2024
  • Most previous works about magnetic effect on plasma emission were interested in emission enhancement which was useful to various fields of plasma application. On the contrary, the following work is interested in plasma dissipation rarely reported in prior researches and expected to help advance plasma-controlling technique. Nd:YAG laser (1064 nm, 6 ns) was focused on three kinds of metals (Al, Ti and STS) and air. The permanent magnetic field (0.4 T) of Nd2Fe14B magnet was provided passing throughout laser-induced plasma. The spectra of plasma in both the presence and absence of the magnetic field were observed with varying laser power and delay time of the spectrograph. In this work it was uniquely discovered that the plasma always dissipated easily in the presence of magnetic field irrespective of the laser power. With the O I(777.42 nm)-line shape function fitted to Lorentz profile, its half width at half maximum (HWHM) was evaluated to verify that the magnetic field increased the plasma density. It is concluded that magnetic field facilitates not only plasma emission enhancement but also plasma dissipation, increasing recombination rate which is proportional to plasma density.

Effect of the pH Value of Seed Coating Solution on Microstructure of Silicalite-1 Zeolite Separation Layer Grown on α-Alumina Support (종결정 코팅용액 pH 값이 α-알루미나 지지체 표면에 성장하는 Silicalite-1 제올라이트 분리층의 미세구조에 미치는 영향)

  • Hu, Sigui;Kim, Min-Zy;Lee, Du-Hyoung;Sharma, Pankaj;Han, Moon-Hee;Cho, Churl-Hee
    • Membrane Journal
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    • v.25 no.5
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    • pp.422-430
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    • 2015
  • The present study announces that the pH value of seed coating solution makes a significant effect on the microstructure of silicalite-1 zeolite layer formed on ${\alpha}$-alumina support. Seed with an average diameter of 75 nm was dispersed in ethanol to prepare three kinds of seed coating solutions with different pH values, and dip-coated on the support. The pH value was controlled to be 2.2, 7.0, and 9.3, respectively. In the secondary growth process, pH 7 seed solution resulted an uniform, 3 to $4{\mu}m$ thick, completely covered, and 100 nm grained silicalite-1 zeolite separation layer. The uniformity and completeness were explained by a uniform, closely packed, multi-layered, and completely covered seed coating in the pH 7 condition. In the condition, ${\alpha}$-alumina support and seed are oppositely charged: support is positively charged (8.4 mV) and seed, negatively (-1.7 mV). The opposite charging induced a strong electrostatic attraction between seed and support, which made the good seed coating state. On the other hand, pH 2.2 and pH 9.3 seed solutions resulted non-uniform, partially covered, and around $1{\mu}m$ grained zeolite separation layer, since seed and support are the same sign charged in the conditions. The same sign charging induced a strong electrostatic repulsion between seed and support which caused a low coverage of seed. It could be concluded that the pH value of seed coating solution is a key parameter to determine the microstructure of silicalite-1 zeolite separation layer.

Buddhist Sculptures from Seongbulsa Temple in Hwanghae-do Province as Seen through Gelatin Dry Plates and Archival Materials from the Collection of the National Museum of Korea (국립중앙박물관 소장 유리건판과 기록자료로 본 황해도 성불사(成佛寺)의 불교조각)

  • Heo Hyeonguk
    • Bangmulgwan gwa yeongu (The National Museum of Korea Journal)
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    • v.1
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    • pp.278-305
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    • 2024
  • Gelatin dry plate photographs dating to the Japanese colonial era and the official documents from the Japanese Government-General of Korea Museum in the collection of the National Museum of Korea are significant materials documenting cultural heritage in North Korea before it was severely damaged in 1950 during the Korean War. There has been an increase in recent years in studies of Buddhist sculptures in North Korea based on these photographs and documents. This paper presents some new comments on the Buddhist sculptures at Seongbulsa Temple in Hwangju, one of the most famous temples in Hwanghae-do Province, based on the related existing research outcomes. This paper aims to facilitate a more comprehensive understanding of the Buddhist sculptures at Seongbulsa Temple by chronicling its history based on historical records, examining its current status, and exploring in detail the production dates and backgrounds of the Buddhist sculptures featured on gelatin dry plates. Prior to Korea's liberation from Japan in 1945, Seongbulsa housed at least seven sculptural items: two Bodhisattva statues, four Buddha statues, and a triad. Two items are from the early Goryeo period, one is from the late Goryeo period, three are from the early Joseon period, and one is from the late Joseon period. Among them, two surviving items are noteworthy. One is the early Goryeo-era Stone Seated Bhaishajyaguru Buddha photographed in Eungjinjeon Hall at Seongbulsa Temple. A close examination of a schematic drawing of the sculpture's pedestal made at the time it was photographed reveals that its material accords with the materials used for the headless Stone Seated Bhaishajyaguru Buddha and pedestal currently found in the old Sangwonam Hermitage site in the Inner Geumgang Valley of Jeongbangsan Mountain. This accordance could mean that the statue is a new significant example of early Goryeo Buddhist sculpture in North Korea. The other notable sculpture is the Gilt-bronze Seated Amitabha Buddha Triad created in 1454 (the second year of the reign of King Danjong) and discovered in Geungnakjeon Hall at Seongbulsa. This statue is currently in the collection of the Sariwon History Museum in Hwanghae-do Province. It is an important example of a dated small gilt-bronze Buddhist statue from the early Joseon period found in North Korea. This paper is a case study of Buddhist sculptures in North Korea, focusing on Seongbulsa Temple. Further utilization of the National Museum of Korea's gelatin dry plates will contribute to developing the study of the history of Korean Buddhist sculpture.