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http://dx.doi.org/10.6109/jkiice.2016.20.11.2085

Infrared Imaging and a New Interpretation on the Reverse Contrast Images in GaAs Wafer  

Kang, Seong-jun (Department of Electronics, Information and Communication Engineering, Mokpo National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.20, no.11, 2016 , pp. 2085-2092 More about this Journal
Abstract
One of the most important properties of the IC substrate is that it should be uniform over large areas. Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infrared techniques of inspection. In particular, a high spatial resolution, near infrared absorption method has been adopted to directly observe defects in semi-insulating GaAs. This technique, which relies on the mapping of infrared transmission, is both rapid and non-destructive. This method demonstrates in a direct way that the infrared images of GaAs crystals arise from defect absorption process. A new interpretation is presented for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in semi-insulating GaAs. The low temperature photoquenching experiment has demonstrated in a direct way that the contrast inverse images of GaAs wafers arise from both absorption and scattering mechanisms rather than charge re-distribution or local variation of bandgap.
Keywords
GaAs wafer; wafer homogeneity characterization; infrared imaging; reverse contrast images; new model of reverse contrast;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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