• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.443-455
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• 2013

Electrochemical studies on charge transfer reactions across the interface between two immiscible electrolyte solutions (ITIES) have greatly attracted researcher's attentions due to their wide applicability in research fields such as ion sensing and biosensing, modeling of biomembranes, pharmacokinetics, phase-transfer catalysis, fuel generation and solar energy conversion. In particular, there have been extensive efforts made on developing sensing platforms for ionic species and biomolecules via gelifying one of the liquid phases to improve mechanical stability in addition to creating microscale interfaces to reduce ohmic loss. In this review, we will mainly discuss on the basic principles, applications and future aspects of various sensing platforms utilizing ion transfer reactions across the ITIES. The ITIES is classified into four types : (i) a conventional liquid/liquid interface, (ii) a micropipette supported liquid/liquid interface, (iii) a single microhole or an array of microholes supported liquid/ liquid interface on a thin polymer film, and (iv) a microhole array liquid/liquid interface on a silicon membrane. Research efforts on developing ion selective sensors for water pollutants as well as biomolecule sensors will be highlighted based on the use of direct and assisted ion transfer reactions across these different ITIES configurations.

• KEPCO Journal on Electric Power and Energy
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• v.3 no.2
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• pp.79-88
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• 2017

In this paper, the wind tunnel test for the measurement of aerodynamic characteristics of transmission conductors with asymmetric sections is described. A single conductor model and bundled conductor models with ice accreted shapes are tested both in steady and turbulent flow, and the aerodynamic coefficients are acquired. Transmission conductor galloping is a kind of wind-induced vibration which is characterized by primarily vertical oscillation with a very low frequency and a high amplitude. It is well known that transmission conductor galloping is generally caused by moderately strong, steady winds when a transmission conductor has an asymmetric cross-section shaped by accreted ice. Galloping should be considered from the design stage of overhead lines because it can cause severe wear and fatigue damage to attachments as well as transmission conductors. It is reported that there have been normally 20 events of galloping per year in Korea, which may be followed by serious consequences in the electric power system. Therefore, this research is performed to measure aerodynamic characteristics of ice accreted transmission conductors to understand and control transmission conductor galloping so that it would help to prevent unexpected failures and reduce the maintenance costs caused by galloping.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.12
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• pp.146-153
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• 2009

Recently, the common grounding systems are adapted in most large structures. Since the ground resistance is insufficient to evaluate the performance of grounding systems, it is needed to measure grounding impedance. Even though the methods of measuring grounding impedance of large grounding systems are presented in IEEE standard 81.2, but they have not been described in detail. In this paper, we present the accurate method of measuring grounding impedance based on the revised fall-of-potential method and measurement errors due to earth mutual resistance and ac mutual coupling depending on locating test electrodes at remote earth were examined for the 15[m]$\times$15[m] grounding grid. As a result, the measurement error due to earth mutual resistance is decreased when the distance to auxiliary electrodes increased. To get rid of measurement errors due to mutual coupling, the potential lead should be installed at a right angle to the current lead. When the angle between the potential and the current leads is an acute angle or an obtuse angle, the mutual couple voltage is positive or negative, respectively. Generally, the measurement errors due to mutual coupling with an obtuse angle route are lower than those with an acute angle route.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.7
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• pp.33-39
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• 2015

In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1899-1909
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• 2007

A cross-coupled charge pump with internal pumping capacitor, witch is advantages from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using a NMOS and a PMOS diode connected to boosting node from VIN node, the pumping node is precharged to the same value each pumping node at start pumping operation. Since the lust-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located the font side of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with conventional cross-coupled charge pump by using a stack-MIM capacitors. A proposed charge pump for TFT-LCD driver IC is designed with $0.13{\mu}m$ triple-well DDI process, fabricated, and tested.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.77-86
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• 2020

Power quality problems caused by feeder voltage drop and extension construction cost problems can occur with the increasing utilization rates of the existing fixed-type EV (electric vehicle) charger. Moreover, EV users might not be able to access the EV charger due to a lack of EV charging facilities. Therefore, this paper proposes an MPSD (movable power supply device) for EVs to overcome user inconvenience caused by the insufficient number of chargers and extension cost issues. The proposed MPSD was mainly composed of a PV (photovoltaic) system, ESS (energy storage system), EV charging system, and monitoring and control system. Furthermore, there are three operation modes available to enhance the flexibility of the MPSD application, depending on the situation. This paper also presents an economical evaluation modeling using the present worth method to consider the cost and benefit elements. The simulation results based on proposed modeling showed that MPSD is more economical than the existing EV charger. Moreover, its profit can be increased significantly depending on the distance to the installation point.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.4A
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• pp.753-759
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• 2006

To predict service life of concrete structures exposed to chloride attack, surface chloride concentration, diffusion coefficient of chloride ion, and chloride corrosion threshold value in concrete, are used as important factors. Of these, as the diffusion coefficient of chloride ion for concrete is strongly influenced by concrete quality and environmental conditions of structures and may significantly change the service life of structures, it is considered as the most important factor for service life prediction. The qualitative factors affecting the penetration and diffusion of chloride ion into concrete are water-cement (W/C) ratio, age, curing conditions, chloride ion concentration of given environment, wet and dry conditions, etc. In this paper the influence of W/C ratio and curing conditions on the diffusion characteristics of chloride ion in concrete was investigated through the chloride ion diffusion test. In the test, the voltages passing through the diffusion cell were measured by accelerated test method using potential difference, and then with the consideration of IR drop ratio the diffusion coefficient of chloride ion for concrete with different W/C ratios were estimated by Andrade's model. Furthermore, under different curing conditions formulas for the estimation of the diffusion coefficient of chloride ion have been proposed by the regression analysis considering the effect of W/C ratio and age.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.11
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• pp.140-149
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• 1996

Cursive characters are written on an economical principle to reduce the motion of a pen in the limit of distinction between characters. That is, the pen is not lifted up to move for writing a next stroke, the pen is not moved at all, or connected two strokes chance their shapes to a similar and simple shape which is easy to be written. For these reasons, strokes and korean alphabets are not only easy to be changed, but also difficult to be splitted. In this paper, we propose a curvature stroke modeling method for splitting and matching by using a structural primitive. A curvature stroke is defined as a substroke which does not change its curvanture. Input strokes handwritten in a cursive style are splitted into a sequence of curvature strokes by segmenting the points which change the direction of rotation, which occur a sudden change of direction, and which occur an excessive rotation Each reference of korean alphabets is handwritten in a printed style and is saved as a sequence of curvature strikes which is generated by splitting process. And merging process is used to generate various sequences of curvature strikes for matching. Here, it is also considered that imaginary strokes can be written or omitted. By using a curvature stroke as a unit of recognition, redundant splitting points in input characters are effectively reduced and exact matching is possible by generating a reference curvature stroke, which consists of the parts of adjacent two korean alphasbets, even when the connecting points between korean alphabets are not splitted. The results showed 83.6% as recognition rate of the first candidate and 0.99sec./character (CPU clock:66MHz) as processing time.

• Journal of Biosystems Engineering
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• v.7 no.2
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• pp.18-29
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• 1983

A low cost and versatile data acquisition system for the field and laboratory use was developed by using a single board microcomputer. Data acquisition system based on a Z80 microprocessor was built, tested and modified to obtain the present functional system. The microcomputer developed consists of 6 kB ROM, 5 kB RAM, 6-seven segment LED display, 16-Hex. key and 8 command key board. And it interfaces with an 8 channel, 12 bits A/D converter, a microprinter, EPROM programmer for 2716, and RS232C interface to transfer data between the system and HP3000 mini-computer manufactured by Hewlett Packard Co., A software package was also developed, tested, and modified for the system. This package included drivers for the AID converter, LED display, key board, microprinter, EPROM programmer, and RS232c interface. All of these programs were written in 280 assembler language and converted to machine codes using a cross assembler by HP3000 computer to the system during modifying stage by data transferring unit of this system, then the machine language wrote to the EPROM by this EPROM programmer. The results are summarized as follows: 1. Measuring program developed was able to control the measuring intervals, No. of channels used, and No. of data, where the maximum measuring speed was 58.8 microsec. 2. Calibration of the system was performed with triangle wave generated by a function generator. The results of calibration agreed well to the test results. 3. The measured data was able to be written into EPROM, then the EPROM data was compared with original data. It took only 75 sec. for the developed program to write the data of 2 kB the EPROM. 4. For the slow speed measurements, microprinter instead of EPROM programmer proved to be useful. It took about 15 min. for microprinter to write the data of 2 kB. 5. Modified data transferring unit was very effective in communicating between the system and HP3000 computer. The required time for data transferring was only 1~2 min. 6. By using DC/DC converting devices such as 78-series, 79-series. and TL497 IC, this system was modified to convert the only one input power sources to the various powers. The available power sources of the system was DC 7~25 V and 1.8 A.