• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.301-311
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• 2012

Discharge property of plasma jet devices is investigated for the application to the doping processes of crystalline solar cells and others. Current-voltage characteristics are shown as the typical normal-glow discharge in the various gas pressure of plasma jets, such as in the atmospheric plasma jets of Ar-discharge, in the ambient pressure of atmospheric discharge, and in the ambient Ar-pressure of Ar-discharge. The discharge voltage of atmospheric plasma jet is required as low as about 2.5 kV while the operation voltage of low pressure below 200 Torr is low as about 1 kV in the discharge of atmospheric and Ar plasma jets. With a single channel plasma jet, the irradiated plasma current on the doped silicon wafer is obtained high as the range of 10~50 mA. The temperature increasement of wafer is normally about $200^{\circ}C$. In the result of silicon wafers doped by phosphoric acid with irradiating the plasma jets, the doping profiles of phosphorus atoms shows the possibility of plasma jet doping on solar cells.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.8-14
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• 2011

The optimal geometry of the gate field plate in AlGaN/GaN-on-Si HEMT has been proposed using two-dimensional device simulation to achieve a high breakdown voltage for a given gate-to-drain distance. It was found that the breakdown voltage was drastically enhanced due to the reduced electric field at the gate corner when a gate field plate was employed. The electric field distribution at the gate corner and the field plate edge was investigated as functions of field plate length and insulator thickness. According to the simulation results, the electric field at the gate corner can be successfully reduced even with the field plate length of 1 ${\mu}m$. On the other hand, when the field plate length is too long, the distance between field plate and drain electrode is reduced below a critical level, which eventually lowers the breakdown voltage. The highest breakdown voltage was achieved with the field plate length of 1 ${\mu}m$. According to the simulation results varying the $SiN_x$ film thickness for the fixed field plate length of 1 ${\mu}m$, the optimum thickness range of the $SiN_x$ film was 200 - 300 nm where the electric field strength at the field plate edge counterbalances that of the gate corner.

• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Aerospace Engineering and Technology
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• v.7 no.2
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• pp.46-52
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• 2008

The instrumentation was studied in order to measure aerodynamic performance and efficiency of a compressor as a component of a 5MW-class gas turbine for power generation. In case of an axial compressor, the distributions of static pressure on a casing can be obtained by averaging at each stage and those of total pressure and temperature in the flow field of the compressor can be measured with a Kiel temperature probe. In case of a centrifugal compressor, the static pressures at the hub and the tip, respectively, of an impeller exit are considerably different, so the pressures need to be measured at both positions and thereafter averaged. The distributions of static pressures in a diffuser and a deswirler are measured at ten positions along five streamlines in one pitch. In addition the flow field can be measured in detail by 5-hole Pitot tube in order to analyze the flow characteristics of the core flow region and wake region and the rotor-stator interaction of the compressor.

• Restorative Dentistry and Endodontics
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• v.27 no.3
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• pp.215-231
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• 2002

삼차신경절의 뉴론이 구강악안면영역에서의 촉각, 압각, 온도각 및 통각 등 다양한 감각을 중추신경계로 전달하는 역할을 하는 것은 주지의 사실이다. 이러한 신경전달에 있어서 이온통로는 감각정보를 전달하는데 핵심적인 역할을 수행한다. 이 중 소디움 통로는 활동전위의 발생에 중요하며, 칼슘 통로는 시냅스 전도에 있어서 필수적인 역할을 수행하고, 포타슘 통로는 안정막전압의 유지 및 재분극에 관여한다. 최근에 여러 가지의 이온통로들의 뇌조직내의 분포에 관한 연구가 시작되고 있는데 삼차신경의 일차구심뉴론이 종지하는 삼차신경핵 즉 삼차신경 척수감각핵, 삼차신경 주감각핵, 삼차신경 중뇌핵 및 삼차신경 운동핵에 존재하는 이온통로에 관한 연구는 매우 희소하여 본 연구에서는 횐쥐의 삼차신경 핵에 존재하는 소디움, 칼슘 및 포타슘 이온통로들을 면역조직화학적 방법으로 조사하여 다음과 같은 결과를 얻었다. (1) 소디움 통로는 삼차신경 척수감각핵, 삼차신경 주감각핵 및 삼차신경 운동핵 모두에서 강하게 염색되었다. (2) 칼슘 통로는 삼차신경 척수감각핵에서는 N-type 통로가 중등도로 염색되었으며 , P/Q-type 통로는 약하게 염색되었으나 R-type 통로는 거의 염색되지 않았다. 삼차신경 주감각핵에서는 P/Q-type 통로가 매우 약하게 염색되었다. (3) 포타슘 통로는 삼차신경 척수감각핵과 삼차신경 주감각핵에서 inwardly rectifying 포타슘 통로(Kir 2.1)가 중등도로 염색되었고, voltage-gated 포타슘 통로(Kv 4.2)가 약하게 염색되었으며, BKCa는 그 염색 정도가 매우 약하게 나타났다. 이상의 결과를 종합해 볼 때 삼차신경 감각핵에는 소디움 통로의 분포가 가장 많았으며, 칼슘통로에서는 N-type이, 포타슘 통로 중에는 inwardly rectifying 통로(Kir 2.1)가 가장 많이 분포함을 관찰할 수 있었다.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.155-161
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• 2007

A new and simple method of 3-dimensional circuit modeling and analysis is proposed and verified experimentally for the first time by determining 3-dimensional current flow and 2-dimensional light distribution in blue InGaN/GaN multi-quantum well (MQW) light emitting diode (LED) devices. Circuit parameters of the LED consist of the resistance of the metallic film and epitaxial layer, and the intrinsic diode which represents the active region emitting the light. The circuit parameters are extracted from the transmission line model (TLM) and current-voltage relation. We applied the >> proposed method and extracted circuit parameters to obtain the light emission pattern in a top-surface emitting-type LED. The current spreading effect is analyzed theoretically and quantitatively with a variation of the resistance of metallic and epitaxial layers. The emitting-light distribution of the fabricated blue LED showed a good agreement with the analyzed result, which shows the dark emission intensity at the corner of the p-electrode.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.1
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• pp.17-25
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• 2019

An intake of Aircraft becomes S-shaped geometry due to spatial limitation or procuring survivability. But curvature of the S-shaped geometry makes secondary flow or flow separation which is the cause of non-uniform pressure distribution. In this study, boundary layer suction is applied to RAE M 2129 S-Duct by attaching sub duct. Design variable is suction location and angle. A mass flow rate drawn out by suction at the sub duct outlet is constant over every model. A grid dependency test was conducted to verify validity of computation. The comparison among the CFD (Computation Fluid Dynamics), ARA experimental result, and ARA computation result of non-dimensional pressure distribution on the Port side and Starboard Side confirmed the validity of CFD. In this study, Distortion Coefficient was used for evaluating aerodynamic performance of S-Duct. The analysis, which was about flow separation, vortex, mass flow rate distribution, and pressure distribution were also investigated. Maximum 26.14% reduction in Distortion Coefficient was verified.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.251-257
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• 2012

Human body communication means transmitting and receiving data through human body medium or through free space along with the human body skin. Electric field distribution around the human body between the transmitter and the receiver were calculated at five different frequencies with 5 MHz interval between 10 MHz and 30 MHz. Commercial electromagnetic simulation tool was used for the calculation of E-field distributions applying the Korean standard male model including 29 different kinds of human tissues. After calculating specific absorption rate(SAR) values on back of the hand, it was compared with International Commission on Non-Ionizing Radiation Protection(ICNIRP) human protection guideline. While conductivities(${\sigma}$) and relative permittivities(${\varepsilon}_r$) of the human tissues for each frequency were input as the analyzing parameters, electric field intensities near both hands were integrated along the integral line between the nearby electrodes for the calculation of the transmitting and receiving voltages whose ratio was defined as channel loss. The calculated channel losses were about ($75{\pm}1$) dB and showed nearly flat response all through the evaluated frequencies.

• Journal of Biomedical Engineering Research
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• v.23 no.4
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• pp.269-279
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• 2002

When we inject a current into an electrically conducting subject such as a human body, voltage and current density distributions are formed inside the subject. The current density within the subject and injection current in the lead wires generate a magnetic field. This magnetic flux density within the subject distorts phase of spin-echo magnetic resonance images. In Magnetic Resonance Current Density Imaging (MRCDI) technique, we obtain internal magnetic flux density images and produce current density images from $\bigtriangledown{\times}B/\mu_\theta$. This internal information is used in Magnetic Resonance Electrical Impedance Tomography (MREIT) where we try to reconstruct a cross-sectional resistivity image of a subject. This paper describes numerical techniques of computing voltage. current density, and magnetic flux density within a subject due to an injection current. We use the Finite Element Method (FEM) and Biot-Savart law to calculate these variables from three-dimensional models with different internal resistivity distributions. The numerical analysis techniques described in this paper are used in the design of MRCDI experiments and also image reconstruction a1gorithms for MREIT.

• Progress in Medical Physics
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• v.10 no.1
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• pp.17-22
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• 1999

INJ-I, INJ-E, PFN, BMI, and PRF were selected among the various factors which constitute a digital linear accelerator to find effects on the dose distribution by changing current and voltage within the permitted scale which Mevatron automatically maintained. We measured the absorbed dose using an ion chamber, analyzed the waveform of beam output using an oscilloscope, and measured symmetry and flatness using a dosimetry system. An RFA plus (Scanditronix, Sweden) device was used as a dosimetry system. Then an 0.6cc ion chamber (PR06C, USA), an electrometer (Capintec192, USA), and an oscilloscope (Tektronix, USA) were employed to measure the changes on the dose distribution characteristics by changing the beam-tuning parameters. When the currents and the voltages of INJ-I, INJ-E, PFN, BMI, and PRF were modified, we were able to see the notable change on the dose rate by examining the change of the output pulse using the oscilloscope and by measuring them using the ion chamber. However, the results of energy and flatness graph from RF A plus were almost identical. The factors had fine differences: INJ-I, INJ-E, PFN, BMI, and PRF had 0.01∼0.02% differences in D10/D20, 0.1∼0.2 % differences in symmetry, and 0.1∼0.4% differences in flatness. Since Mevatron controlled itself automatically to keep the reference value of the factor, it was not able to see large differences in the dose distribution. There were fine differences on the dose rate distribution when the voltage and the currents of the digitized factors were modified Nonetheless, a basic operational management information was achieved.