• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.97-97
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• 1994

Wide gap 반도체 중 하나인 GaN 에너지갭이 실온에서 3.4eV 이고 직접천이형 에너지대 구조를 가지므로 청색 및 자외영역의 파장을 발광하는 발광다이오드와 바도체 레이저 다이오드의 제작에유용한 재료이다. GaN계 III족 질화물반도체가 다파장용 광원으로서 유망함을 보인 것은 1970년대 초방의기초적 연구이다. 이로부터 약 25년이 경고한 현재 청색발광다이오드가 실용화당계에 이르게 되었지만 아직까지 전류주입에 의한 레이저발진은 보고되고있지 않다. 이 논문에서는 ALGaN/GaN이중이종접합(DH) 구조의 광여기에 의한 유도방출과 광학적 이득을 측정하므로서 전류주입에의한 레이저발진의 가능성을 조사하였다. 유기금속기상에피텍셜(MOVPE)법으로 성장한 ALGaN/GaN DH구조의 표면에 수직으로 펄스발진 질소레이저(파장:337.1nm, 주기:10Hz, 폭: 8nsec) 빔의 공출력밀도를 변화시키어 조사하고 시료의단면 혹은 표면으로부터 방출되는 광 스펙트럼을 측정하였다. 입상광밀도가 증가함에 따라 자연방출에 의한 발광피크보다 낮은 에너지에서 발광강도가 큰 유도방출에 의한 피크가 370nm의 파장에서 현저하게 나타났으며 실온에서 유동방출에 필요한 입사공밀도의 임계치는 약 89㎾/$\textrm{cm}^2$이었다. 이는 GaN 단독층에 대한 유동방출의 임계치 700㎾/$\textrm{cm}^2$ 에 비하여 약 1/8정도 낮은 것이며, 이를 전류밀도로 환산하면 약 27㎄/$\textrm{cm}^2$ 정도로서 전류주입에 의하여서도 레이저발진을 실현할 수 있는 현실적인 값이다. 한편 광여기 방법으로 측정한 광학적 이득은 입사광의 밀도가 각각 100㎾/$\textrm{cm}^2$과 200㎾/$\textrm{cm}^2$일 때 34$cm^{-1}$ / 과 160 $cm^{-1}$ / 이었다. 이와 같은 결과는 GaN의밴드단 부근의 파장영역에서 AIGaN 흔정의 굴절율이 GaN의 굴절율보다 작으므로 DH구조의 채택의 의한 광의 몰입이 가능하여 임계치가 저하된 것으로 여겨진다. 또한 광학적 이득의 존재는 이 구조에 의한 극단파장 반도체 레이저다이오드의 실현 가능성을 나타내는 것이다.

• Journal of the Korean Vacuum Society
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• 제18권3호
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• pp.236-243
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• 2009

Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).

• Journal of the Institute of Electronics and Information Engineers
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• 제53권5호
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of the Korean Vacuum Society
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• 제20권2호
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• pp.100-105
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• 2011

Simulations were performed using Crystal TRIM software under the same conditions used by previous researchers in order to clarify the mechanism that determines sheet resistance various doses, energies and beam currents. The results showed that the peak of the depth profile (Rp) in the same sample gradually shifts inward and damage increases near the surface as the energy increases for $As^+$ equal dose of $1{\times}10^{15}/cm^2$ implanted into Si(100) energies of 5, 10, and 15 keV. From a theoretical calculation of B+ ion implantation processes at energy of 20 keV using parameters that correspond to 1 mA and 7 mA beam currents with the same dose of $5{\times}10^{15}/cm^2$, it was found that the higher beam currents resulted in more damage near the surface (<100 nm). Likewise, In the simulations employing sets of doses ($1{\times}10^{15}$, $3{\times}10^{15}/cm^2$) and beam currents (0.8 mA, 8 mA), more damage was produced at larger doses and higher current. Thus, sheet resistance at the surface was reduced by the intensified damage from increases in beam energy, dose and beam currents.

• Journal of the Korean Institute of Gas
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• 제19권1호
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• pp.64-70
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• 2015

In order to evaluate the degree of hydrogen embrittlement of TRIP steels charged with hydrogen according to varying the current density and the charging time under acid and alkaline electrolyte conditions were tested by small punch test. The results of SP test showed that the degree of hydrogen embrittlement at acid electrolyte condition was more effective factor compared to that of alkaline electrolyte condition. Therefore, all of the charging time and the charging current density were at the condition of acid electrolyte appeared as the main factor of the degree of hydrogen embrittlement in the condition of acid electrolyte. But, it was considered that the charging time compared to the charging current density at the condition of alkaline electrolyte was more effective factor to raise the degree of hydrogen embrittlement.

• The Journal of the Korea institute of electronic communication sciences
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• 제10권3호
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• pp.365-373
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• 2015

The performance of 4-switch 3-phase inverter(FSTPI) is mainly affected by the unbalanced voltages between two capacitors which replace two switches of conventional 6-switch 3-phase inverter(SSTPI). This paper proposes a DC offset current injection method to compensate the capacitor voltage unbalance for FSTPI. A simplified SVPWM method which can be applied to FSTPI is also proposed. The validity of the proposed methods is verified by computer simulation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• 제23권1호
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• pp.36-40
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• 2009

Concrete poles(CP) are popular supports for distribution lines. Various types of grounding electrode, such as copper-clad rods, have been used to maintain CP's ground resistance under the required value. The buried part of CP can also have structural grounding effect because of its iron reinforcing rods inside CPs. In this paper, we measured the total ground current injected into CP ground while measuring the ground current splitting to the metal electrode as well as the total injecting current. By this, it was able to measure the ground current splitting to CP structure. Based on the measured results, interrelationship between ground resistance of metal electrodes and current split factor to CP structure was analyzed.

• The Transactions of the Korean Institute of Power Electronics
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• 제15권3호
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• pp.235-243
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• 2010

This paper describes a design method of LCL filter for grid-connected three-phase PWM inverter. First, by analyzing the ripple component of phase voltages and currents according to the PWM pattern of grid-connected three-phase inverter, the RMS value of the current ripple can be calculated. Then based on the analysis, the current THD in the inverter-side can be defined. After that by analyzing the dependency between the current THD of the system and the current ripple attenuation, the parameter of LCL filter can be designed. Finally, the described LCL filter design method is verified by showing a good agreement between the target current $THD_g$ and the actual one through the simulation and experiment.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.79.1-79.1
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• 2010

현재까지의 연료전지 스택 고장 진단 방법은 스택의 전류와 각 셀 전압값을 측정하고 그 측정된 값을 계산함으로써 스택의 고장 여부를 판단하는 것이었다. 이러한 방법은 수백개 이상의 스택의 셀 전압을 2~4개 단위로 측정하기 때문에 백개 이상의 측정 채널이 필요하다. 또한, 스택 진단 시스템을 복잡하게 하여 신뢰성을 저하시킬 뿐만 아니라 가격 상승을 유발한다. 본 논문에서는 이러한 문제점을 해결하기 위해 THDA(전고조파왜율 분석) 방법을 제안하였다. THDA는 스택에 교류 전류를 주입하고 스택 양단의 전압을 측정하여 주입된 교류 전류의 THD를 구함으로써 연료전지 스택의 상태를 진단하는 방법이다.

• The Transactions of the Korean Institute of Power Electronics
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• 제8권2호
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• pp.173-179
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• 2003

In this paper, a novel on-line dc capacitance estimation method for the three-phase PWM converter is proposed. At no load, input current at a low frequency is injected, which causes dc voltage ripple. With the at voltage and current ripple components of the dc side, the capacitance can be calculated. Experimental result shows that the estimation error is less than 2%.