• Journal of Satellite, Information and Communications
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• v.5 no.2
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• pp.82-86
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• 2010

In this paper, a power amplifier module for WCDMA base-station applications is designed and implemented using GaN field-effect transistors (FETs), which uses an envelope tracking bias system. The designed module consists of an high gain MMIC amplifier, a driver amplifier, a power amplifier, and bias circuits for envelope tracking applications. Especially, a FET bias sequencing circuit and two isolators are integrated for stable RF operations. All circuits are assembled within a single housing, so its dimension is just $17.8{\times}9.8{\times}2.0\;cm3$. Measured results show that the developed power amplifier module has good envelope tracking capability: the power-added efficiency of 35% at the output power range from 30dBm to 40dBm over a wide range of drain bias.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.10B
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• pp.1701-1706
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• 2000

In this work a 38 GHz hybrid 2-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions has been successfully developed. A 10 mil thickness duroid substrate was use for fabrication of the power amplifier and the waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32-40 GHz. The measured results of power amplifier module showed 29 dBm output power(P1.5dB), 7,2 dB associated gain and 11.2% power-added efficiency(PAE) at 36.8-38.5 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1331-1336
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• 2014

In this study, we have implemented a PAM(Power Amplifier Module) with 25W output power using by cooperate divider/Combiner circuit in X-band to minimize combine loss on a Al2O3 substrate. The PAM(Power Amplifier Module) is consisted of MMIC and 10way traveling wave divider/Combiner with proposed structure what have showed that 45.2dBm output power, 16dB gain, PAE 26 % and 17dBc@44dBm IMD3 characteristics. This combine/divider structure can be used when multistage passive divider and combiner needs. especially, power amplifier with very compact size.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.137-141
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• 2000

본 논문에서는 전력증폭기의 선형성을 광대역으로 개선하기 위하여 Delay 라인의 영향에 대하여 고려하려다. 사용된 전력 증폭기의 이득은 37dB이고, 3단의 l1W급으로 설계되었다. Error 증폭기는 4단으로 설계되었으며 이득은 55dB이다. 그리고 크기와 위상을조절하기 위한 장치로 Vector modulator를 사용하였으며, 또한 방향성 결합기 및 전력분배기를 설계하였다. 각 모듈을 통합하여 주파수 2.11GHz에서 2.2GHz까지 Delay 특성을 고려한 광대역 선형 전력 증폭기를 설계하였으며 대역폭이 30MHz에 걸쳐 IMD성분의 제거 특성이 25dB이상의 개선 효과를 얻었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1193-1200
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• 2008

This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.880-886
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• 2007

We have proposed a new "hybrid" envelope elimination and restoration(EER) transmitter architecture using an efficiency optimized power amplifier(PA) and modified bias modulator. The efficiency of the PA at the average drain voltage is very important for the overall transmitter efficiency because the PA operates mostly at the average power region of the modulation signal. Accordingly, the efficiency of the PA has been optimized at the region. Besides, the bias modulator has been accompanied with the emitter follower for the minimization of memory effect. A saturation amplifier, class $F^{-1}$ is built using a 5-W PEP LDMOSFET for forward-link single-carrier wideband code-division multiple-access(WCDMA) at 1-GHz. For the interlock experiment, the bias modulator has been built with the efficiency of 64.16% and peak output voltage of 31.8 V. The transmitter with the proposed PA and bias modulator has been achieved an efficiency of 44.19%, an improvement of 8.11%. Besides, the output power is enhanced to 32.33 dBm due to the class F operation and the PAE is 38.28% with ACLRs of -35.9 dBc at 5-MHz offset. These results show that the proposed architecture is a very good candidate for the linear and efficient high power transmitter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.162-172
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• 2011

In this paper, a design and fabrication of 4 W power amplifier for the WiMAX frequency band(2.3~2.7 GHz) are presented. The adopted active device is a commercially available GaN HEMT chip of Triquint Company, which is recently released. The optimum input and output impedances are extracted for power amplifier design using a specially self-designed tuning jig. Using the adopted impedances value, class-F power amplifier was designed based on EM simulation. For integration and matching in the small package module, spiral inductors and interdigital capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 50 % and harmonic suppression above 40 dBc for second(2nd) and third(3rd) harmonic at the output power of 36 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.49-54
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• 2001

In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.7
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• pp.1156-1160
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• 2000

The cancellation loop configuration for power amplifier module is proposed to reject the RX signals using feed-forward technique. In this paper, we implement the 1W-ampilfier module of WLL band to show validity of the proposed cancellation loop. The power amplifier module with the proposed cancellation loop can provide low TX insertion path loss due to duplexer and choice of loose RX attenuation characteristic for various wireless communication systems. It shows at least 90 % improved RX rejection characteristic compared to power amplifier module without RX band cancellation loop.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1105-1111
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• 2006

In this paper, using low-temperature co-fired ceramic(LTCC) based system-in-package(SiP) technology, a very compact power amplifier LTCC module was designed, fabricated, and then characterized for 60 GHz wireless transmitter applications. In order to reduce the interconnection loss between a LTCC board and power amplifier monolithic microwave integrated circuits(MMIC), bond-wire transitions were optimized and high-isolated module structure was proposed to integrate the power amplifier MMIC into LTCC board. In the case of wire-bonding transition, a matching circuit was designed on the LTCC substrate and interconnection space between wires was optimized in terms of their angle. In addition, the wire-bonding structure of coplanar waveguide type was used to reduce radiation of EM-fields due to interconnection discontinuity. For high-isolated module structure, DC bias lines were fully embedded into the LTCC substrate and shielded with vias. Using 5-layer LTCC dielectrics, the power amplifier LTCC module was fabricated and its size is $4.6{\times}4.9{\times}0.5mm^3$. The fabricated module shows the gain of 10 dB and the output power of 11 dBm at P1dB compression point from 60 to 65 GHz.