Browse > Article
http://dx.doi.org/10.5515/KJKIEES.2011.22.2.162

Design of a GaN HEMT 4 W Miniaturized Power Amplifier Module for WiMAX Band  

Jeong, Hae-Chang (Department of Radio Science and Engineering, Chungnam National University)
Oh, Hyun-Seok (Department of Radio Science and Engineering, Chungnam National University)
Heo, Yun-Seong (Department of Radio Science and Engineering, Chungnam National University)
Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
Kim, Kyoung-Min (Wavenics, Inc.)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.22, no.2, 2011 , pp. 162-172 More about this Journal
Abstract
In this paper, a design and fabrication of 4 W power amplifier for the WiMAX frequency band(2.3~2.7 GHz) are presented. The adopted active device is a commercially available GaN HEMT chip of Triquint Company, which is recently released. The optimum input and output impedances are extracted for power amplifier design using a specially self-designed tuning jig. Using the adopted impedances value, class-F power amplifier was designed based on EM simulation. For integration and matching in the small package module, spiral inductors and interdigital capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 50 % and harmonic suppression above 40 dBc for second(2nd) and third(3rd) harmonic at the output power of 36 dBm.
Keywords
GaN HEMT; Power Amplifier Module; WiMAX;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 U. H. Andre, E. J. Crescenzi, R. S. Pengelly, A. R. Prejs, and S. M. Wood, "High efficiency, high linearity GaN HEMT amplifiers for WiMAX applications", High Frequency Electronics, vol. 6, no. 6, pp. 16-29, Jun. 2007.
2 MGA-242740-02, "2.4-2.7 GHz 10 W high efficiency linear power amplifier", Microwave Technology Inc., Available: http://mwtinc.com/
3 RF3931, 30 W GaN Wide-Band Power Amplifier, RFMD, Available: http://rfmd.com/
4 RUP15050-10, GaN-SiC Broadband Amplifier, RFHIC, Available: http://rfhic.com/
5 김정준, 문정환, 김장헌, 김일두, 전명수, 김범만, "2.14-GHz 대역 고효율 Class-F 전력 증폭기 개발", 한국전자파학회논문지, 18(8), pp. 873-879, 2007년 8월.   과학기술학회마을   DOI
6 노태문, 한기천, 김영식, 박위상, 김범만, "휴대용 PCS 단말기를 위한 선형 전력증폭기 모듈의 구현", 한국전자파학회논문지, 8(6), pp. 558-567, 1997년 12월.   과학기술학회마을
7 TGF2023-01, 6 Watt Discrete Power GaN on SiC HEMT, Triquint Semiconductor, Available: http://triquint.com/
8 C580274C, Leaded Power Amplifier Package, Stratedge, Available: http://stratedge.com/
9 5502, Air Trimmer Capacitor, Johanson Manufacturing, Available: http://johansonmfg.com/
10 ADC250CSQH, Coaxial Circulator, Admotech, Available: http://admotech.com/
11 F. Raab, "Class-F power amplifiers with maximally flat waveforms", IEEE Trans MTT, vol. 43, no. 11, pp. 2007-2012, 1997.   DOI
12 B. C. Wadell, Transmission Line Design Handbook, Artech House, 1991.
13 김영규, G. Chaudhary, 정용채, 임종식, 김동수, 김준철, 박종철, "새로운 고조파 차단 부하 회로를 이용한 2.14 GHz 대역 고효율 F급 전력 증폭기", 한국전자파학회논문지, 21(9), pp. 1065-1071, 2010년 9월.
14 Design Guidelines, Thin-Film Circuits Design Rules, Applied Thin-Film Product, Available: http://thinfilm.com/
15 U. K. Mishra, P. Parikh, and Wu Yi-Feng, "AlGaN/GaN HEMTs-an overview of device operation and applications", Proc. of IEEE, vol. 90. no. 6, pp. 1022-1031, Jun. 2002.   DOI
16 http://ieee802.org/16/