• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.7C
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• pp.669-677
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• 2003

A new Modem technique - 8SQAM(8-state Superposed Quadrature Amplitude Modulation) - for use in power and bandwidth limited digital communication system is proposed. 8SQAM is free of inter-symbol interference(ISI) and generates output signals which have a smooth and continuous phase transition and a reduced envelope fluctuation by keeping correlation between amplitudes and phases of two subsequent symbols. Accordingly, 8SQAM, as compared with a conventional 8PSK, is influenced a little by ISI and inter-modulation(IM) caused by nonlinear distortions. In this paper, the performance of the 8SQAM system, in a nonlinearly amplified channel impaired by additive white Gaussian noise(AWGN), ISI and IM, is analyzed via computer simulation. The simulation result shows that 8SQAM outperforms 8PSK with roll-off value of $\alpha$=0.25 by 2.5dB in CNR to maintain BER=1$\times$10$^{-4}$ when input back-off(IBO) of HPA is 3dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.453-461
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• 2011

In order to use more efficiently limited frequency resources at the broadcasting band and to eliminate blanket area of the terrestrial broadcasting and to improve broadcasting quality. The importance of repeaters has increasing continuously. However, in case of T-DMB digital on channel repeater in OFDM systems, some of the signal radiated feedback again at the receiver antenna. So it generates feedback signal interference in repeater system. Also phase noise increases ICI(Inter Carrier Interference). It affects seriously the frequency domain equalizer. In this paper, we remove the feedback signal interference by LMS with correlation. Also we propose an effective equalizer algorithm that can remove ICI caused by phase noise and the power amplifier's back-off. In this simulation results, this system is satisfied the performance of BER=$10^{-4}$ at less than SNR=14 dB after compensation of phase noise.

• The Journal of the Acoustical Society of Korea
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• v.39 no.5
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• pp.435-440
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• 2020

Single-beam acoustic tweezers that are capable of manipulating micron-size particles in a non-contact manner have been used in many biological and biomedical applications. Current single-beam acoustic tweezer systems developed for in vitro experiments consist of a function generator and a power amplifier, thus the system is bulky and expensive. This configuration would not be suitable for in vivo and clinical applications. Thus, in this paper, we present a portable single-beam acoustic tweezer system and its performances of trapping and manipulating micron-size objects. The developed system consists of an Field Programmable Gate Array (FPGA) chip and two pulsers, and parameters such as center frequency and pulse duration were controlled by a Personal Computer (PC) via a USB (Universal Serial Bus) interface in real-time. It was shown that the system was capable of generating the transmitting pulse up to 20 MHz, and producing sufficient intensity to trap microparticles and cells. The performance of the system was evaluated by trapping and manipulating 40 ㎛ and 90 ㎛ in diameter polystyrene particles.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.6
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• pp.427-434
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• 2013

In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.66-71
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• 2014

This paper presents an analog front-end integrated circuit (IC) for medical ultrasound imaging systems using standard $0.18-{\mu}m$ CMOS process. The proposed front-end circuit includes the transmit part which consists of 15-V high-voltage pulser operating at 2.6 MHz, and the receive part which consists of switch and a low-power low-noise preamplifier. Depending on the operation mode, the output driver in the transmit pulser can be reconfigured as the switch in the receive path and thus the area of the overall front-end IC is reduced by over 70% in comparison to previous work. The designed single-channel front-end prototype consumes less than $0.045mm^2$ of core area and can be utilized as a key building block in highly-integrated multi-array ultrasound medical imaging systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.84-92
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• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1315-1322
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• 2012

Frequency domain reflectometry diagnoses faults on electric cables by measuring the cable impedance. Time domain impedance measurement technique using an oscilloscope instead of a network analyzer is widely used for electric power cables under harsh environment or powered condition. However, impedance measurement in the time domain shows inaccuracy as the frequency increases due to several parasitic impedances, which results in the poor resolution of fault points. This paper presents the accuracy enhancement technique using a module with an operational amplifier and an error calibration method in the time domain impedance measurements, which is confirmed by comparing the cable impedance measurement results.

• Journal of IKEEE
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• v.18 no.2
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• pp.192-197
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• 2014

In this paper, $3^{rd}$ SDM with FDPA(Feedback Delay Pass Addition) technique to improve the input range is proposed. Conventional architecture with $3^{rd}$ transfer function is just made as adding a digital delay path in $2^{nd}$ SDM architecture. But the input range is very small because feedback path into the first integrator is increased. But, proposed architecture change feedback path into the first integrator to the second integrator, so input range could be improved about 9dB. The $3^{rd}$ SC SDM with only one operational amplifier was implemented using double-sampling technique. Simulation results for the proposed SDM designed in $0.18{\mu}m$ CMOS technology with power supply voltage 1.8V, signal bandwidth 20KHz and audible sampling frequency 2.8224MHz show SNR(Signal to Noise Ratio) of 83.8dB, the power consumption of $700{\mu}W$ and Dynamic Range of 82.8dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.25-33
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• 1998

In this paper, we describe a single-gate MESFET mixer at PCS(Personal Communication Service) frequency band. The PCS frequency band is 1965~2025 MHz in FR and 140 MHz in IF irrespectly. The design of the mixer was executed by microwave simulator, EEsof Libra. The matching network is consisted of rectangular inductor, MIM capacitor and open stub. The ma- nufacture work was accomplished by the micro-pen and wedge-bonder. The mixer showed $6.69\pm0.65$ dB of conversion gain, $-14.9\pm3.5$dB of RF reflection coefficient and 57.83 dB of LO/IF isolation at 10 dBm of LO power when LO frequency is 1855 MHz. When this mixer is used at PCS terminal, IF-amplifier which compensates the conversion loss of diode mixer may be omitted.