• Journal of IKEEE
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• v.27 no.1
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• pp.122-126
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• 2023

In this paper, a control system for a complex microbial incubator was proposed. The proposed control system consists of a control unit, a communication unit, a power supply unit, and a control system of the complex microbial incubator. The controller of the complex microbial incubator is designed and manufactured to convert analog signals and digital signals, and control signals of sensors such as displays using LCD panels, water level sensors, temperature sensors, and pH concentration sensors. The water level sensor used is designed and manufactured to enable accurate water level measurement by using the IR laser method with excellent linearity in order to solve the problem that existing water level sensors are difficult to measure due to foreign substances such as bubbles. The temperature sensor is designed and used so that it has high accuracy and no cumulative resistance error by measuring using the thermal resistance principle. The communication unit consists of two LAN ports and one RS-232 port, and is designed and manufactured to transmit signals such as LCD panel, PCT panel, and load cell controller used in the complex microbial incubator to the control unit. The power supply unit is designed and manufactured to supply power by configuring it with three voltage supply terminals such as 24V, 12V and 5V so that the control unit and communication unit can operate smoothly. The control system of the complex microbial incubator uses PLC to control sensor values such as pH concentration sensor, temperature sensor, and water level sensor, and the operation of circulation pump, circulation valve, rotary pump, and inverter load cell used for cultivation. In order to evaluate the performance of the control system of the proposed complex microbial incubator, the result of the experiment conducted by the accredited certification body showed that the range of water level measurement sensitivity was -0.41mm~1.59mm, and the range of change in water temperature was ±0.41℃, which is currently commercially available. It was confirmed that the product operates with better performance than the performance of the products. Therefore, the effectiveness of the control system of the complex microbial incubator proposed in this paper was demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.96-99
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• 1993

Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.158-158
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• 2010

본 연구에서는 분자선 박막성장 장비를 (MBE) 이용하여 droplet epitaxy 방법으로 성장시킨 GaAs/AlGaAs 양자점구조의 표면전기장변화에 관하여 photoreflectance spectroscopy (PR)를 이용하였다. 본 실험에 사용된 GaAs/AlGaAs 양자점 구조는 undoped-GaAs (001) 기판을 위에 성장온도 $580^{\circ}C$에서 GaAs buffer layer를 100 nm 성장 후 장벽층으로 AlGaAs을 100 nm 성장하였다. AlGaAs 장벽층을 성장한 후 기판온도를 $300^{\circ}C$로 설정하여 Ga을 3.75 원자층를 (ML) 조사하여 Ga drop을 형성하였다. Ga drop을 GaAs 나노구조로 결정화시키기 위하여 $As_4$를 beam equivalent pressure (BEP) 기준으로 $1{\times}10^{-4}$ Torr로 기판온도 $150^{\circ}C$에서 조사하였다. 결정화 직후 RHEED로 육각구조의 회절 페턴을 관측하여 결정화를 확인하였다. GaAs 나노 구조를 성장한 후 AlGaAs 장벽층을 성장하기위해 10 nm AlGaAs layer는 MEE 방법을 이용하여 $150^{\circ}C$에서 저온 성장 하였으며, 저온성장 후 기판온도를 $580^{\circ}C$로 설정하여 80 nm의 AlGaAs 층을 성장하고 최종적으로 GaAs 10 nm를 capping layer로 성장하였다. 저온성장 과정에서의 결정성의 저하를 보상하기위하여 MBE 챔버내에서 $650^{\circ}C$에서 열처리를 수행하였다. GaAs/AlGaAs 양자점의 광학적 특성은 photoluminescence를 이용하여 평가 하였으며 780 nm 근처에서 발광을 보여 주었다. 특히 PR 실험으로부터 시료의 전기장에 의한 Franz-Keldysh oscillation (FKO)의 변화를 관측하여 GaAs/AlGaAs 양자점의 존재에 의한 시료의 표면에 형성되는 표면전기장을 측정하였다. 또한 시료에 형성된 전기장의 세기를 계산하기위해 PR 신호로부터 fast Fourier transformation (FFT)을 이용하였다. 특히 온도의 존성실험을 통하여 표면전기장의 변화를 관측 하였으며 양자구속효과와 관련성에 대하여 고찰 하였다.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.114-122
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• 2016

EIS (Electro interstitial scan) is a non-invasive and simple method to find the physio-pathological information inferred by electric current response with respect to low direct current applied between remote sites of the body. Although a few EIS-based devices for diagnosing diabetes were commercialized, they were not successful in offering clinical validity nor in confirming diagnostic principle. In this study, we measured the voltage responses of diabetic patients and normal subjects with a commercialized EIS device to test the usefulness of EIS in screening diabetes. For this purpose, voltage was measured between pairs of electrodes contacted at both palm, both soles of the feet and left and right forehead above both eyes. After feature extraction of voltage signals, the AUC (area under the curve) between the two groups was calculated and we found that seven variables were appropriately shown above 60% of accuracy. In addition, we applied the k-NN (k-nearest neighbors) method and found that the accuracy of classification between the two groups reached the accuracy of 76.2%. This result implies that the voltage response analysis based on EIS has potential as a diabetics screening method.

• KSBB Journal
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• v.21 no.5
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• pp.325-330
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• 2006

This study presents the characterization of an integrated portable microfluidic electrical detection system for fast and low volume immunoassay using polystyrene microbead, which are used as immobilization surfaces. In our chip, a filtration method using the microbead was adopted for sample immobilization and immunogold silver staining(IGSS) was used to increase the electrical signal. The chip is composed of an inexpensive and biocompatible Polydimethylsiloxane(PDMS) layer and Pyrex glass substrate. Platinum microelectrodes for electric signal detection were fabricated on the substrate and microchannel and pillar-type microfilters were formed in the PDMS layer. With a fabricated chip, we reacted antigen and antibody according to the procedures. Then, silver enhancer was injected to increase the size of nanogold particles tagged with the second antibody. As a result, microbeads were connected to each other and formed an electrical bridge between microelectrodes. Resistance measured through the electrodes showed a difference of two orders of magnitude between specific and nonspecific immuno-reactions. The detection limit was 10 ng/ml. The developed immunoassay chip reduced the total analysis time from 3 hours to 50 min. Fast and low-volume biochemical analysis has been successfully achieved with the developed microfilter and immuno-sensor chip, which is integrated to the microfluidic system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.43-50
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• 2010

In this paper, we analyzed radiated emission generated by the split power/ground plane structures in order to reduce EMI in system modules. The magnetic fields and electric fields were simulated and measured on the test boards under various conditions. In order to reduce radiated emission, we have to determine spacing and location of the split ground gap so that input signal frequency does not coincide with the resonance frequency of the split power/ground plane structure and the phase of reflection coefficient is close to $0^{\circ}$ at input signal frequency. Moreover, we found that inserting a stitching capacitor could reduce the radiated emission. Low magnitude of reflection coefficient and the phase close to $0^{\circ}$ are required to reduce radiated emission. It is necessary to properly decide value and location of a stitching capacitor to fulfil those requirements.

• Journal of the Korean Society of Radiology
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• v.9 no.7
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• pp.439-443
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• 2015

An electrical signals of a conventional radiation medical imaging sensor are obtained by charge integration method. In this study, the polycrystalline cadmium telluride(p-CdTe) film was fabricated by a thermal evaporation method for the photon counting sensor development with excellent resolution in low exposure dose. From the fabricated p-CdTe sensor, the physical properties(SEM, XRD) and the electrical properties(leakage current, x-ray sensitivity, SNR) were evaluated. As a result, the leakage current of below $5nA/cm^2$ and $7{\mu}C/cm^2-R$ of the X-ray sensitivity were showed in below $1V/{\mu}m$. In addition, the signal to noise ratio showed the values of above 5000 at operating voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.5
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• pp.1110-1116
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• 2017

Depending on the operating characteristics, track circuit is installed for the purpose of direct or indirect control of the signal device, point switch machine and other security device. These are mainly used for train detection, transmission of information, broken rail detection and transmission of return current. Especially, the return current is related to signal system, power system and catenary line, and track circuit systems. It is one of the most important component shall be dealt for the safety of track side staff and for the protection of railway-related electrical system according to electrification. Therefore, an accurate analysis of the return current is needed to prevent the return current unbalance and the system induced disorder and failure due to an over current condition. Also, if the malfunction occurred by the return current harmonics, it can cause problems including train operation interruption. In this paper, we presented measurement and analysis method at return current and it's harmonics by high speed train operation on the honam high speed line.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.49 no.1
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• pp.80-87
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• 2012

We have developed the ATE(Automatic Test Equipment) system for the performance test of pre-amplifier of thermal imaging devices. The device regenerates the electronic signals of photon detection module which is normally in weak energy, for the image signals processing. Previous ATE system was primarily and actively developed in the field of semiconductor devices quality parts inspection. Recently, it has been studied in the field of performance testing of equipment. In the field of thermal performance test equipment, however, it lacks the study of ATE compared to other areas, which causes the maintenance related to the core of military thermal imaging system maintenance to be limited. In this paper, a new study of ATE in the field of thermal imaging system is done. It is designed to be used universally for the ATE system with different types of circuit card of thermal imaging system by adopting matrix relays. Using the developed ATE measuring the pre-amplifier amplitude, an average amplified amplitude of 2.71Vpp was measured which confirms that it is within the range of theoretical analysis and also verifies the good performance of the developed ATE.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.165-165
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• 2013

희토류 발광 물질은 4f 껍질에 위치하는 전자의 독특한 특성 때문에 발광 소자와 디스플레이에 그 응용성을 확장하고 있다. 본 연구에서는 고효율의 적색과 주황색 형광체를 합성하기 위하여 모체 격자 CaNb2O6에 희토류 이온인 유로퓸과 사마륨을 치환 고용하여 최적의 합성 조건을 조사하였다. Ca1-1.5xNb2O6:REx3+ (RE=Eu, Sm) 형광체 분말 시료는 고상반응법을 사용하여 활성제 이온인 Eu3+와 Sm3+의 농도비를 0, 0.01, 0.05, 0.10, 0.15, 0.20 mol 로 변화시키면서 합성하였다. 초기 물질 CaO, Nb2O5, Eu2O3와 Sm2O3을 화학 적량으로 측정하고, 400 rpm의 속도로 24시간 밀링 작업을 수행한 후에, 건조기 $60^{\circ}C$에서 28시간 건조하고, 시료를 막자 사발에서 갈아 세라믹 도가니에 담아 튜브형 전기로에서 분당 $5^{\circ}C$의 비율로 승온시켜 $500^{\circ}C$에서 5시간 동안 하소와 $1,100^{\circ}C$에서 6시간 소결하여 합성하였다. Eu3+가 도핑된 경우에, 발광 스펙트럼은 Eu3+ 이온의 농도비에 관계없이 강한 적색 발광 스펙트럼이 616 nm에서 관측되었다. 이외에도, 596 nm와 708 nm에서 상대적으로 발광 세기가 약한 주황색 발광과 적색 발광 신호가 검출되었으며, 541 nm에서는 매우 약한 녹색스펙트럼이 관측되었다. Eu3+ 이온의 농도비에 0.01 mol에서 0.15 mol로 증가함에 따라 주발광 신호의 세기는 점점 증가하였으며, 0.15 mol에서 최대 발광 세기를 나타내었다. Eu3+ 이온의 농도비가 0.20 mol 로 더욱 증가함에 따라 주 피크의 세기는 농도 소강 현상에 의하여 현저히 감소함을 보였다. 한편, 주된 흡광 스펙트럼은 279 nm에서 나타났는데, 이것은 전하전달밴드 신호이다. Sm3+가 도핑된 형광체 분말의 발광 스펙트럼은 모든 시료의 경우에 613 nm에서 강한 적주황색 발광 스펙트럼이 관측되었고, 상대적으로 세기가 약한 570 nm와 660 nm에 피크를 갖는 황색과 적색 발광 스펙트럼이 발생하였다. 흡광과 발광 스펙트럼의 최대 세기는 0.05 mol에서 나타났으며, Sm3+ 이온의 농도비가 더욱 증가함에 따라 흡광과 발광 세기는 급격하게 감소하였다.