• Resources Recycling
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• v.14 no.1
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• pp.39-46
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• 2005

A solid-state high power torch with inter-electrode insert (IEI) was developed to treat solid waste (for example, incinerated ash), and it's operation characteristics were obtained in the plasma facility test for waste treatment. According to torch test from this study, at the non-transferred mode voltage is increased by gas volume proportionally, and at the transferred mode it is not affected to voltage change. Especially arc voltage is sustained stable at the range of 10% of total Fe in slag. In addition, Electrical conductivity is 0.05~0.25${\Omega}^{-1}cm^{-1}$, torch efficiency is 75~85% and Erosion rate is 2${\times}10^{-6}~6{\times}10^{-6}$ kg/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.461-462
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• 2005

In order to improve the efficiency of dye-sensitized solar cell (DSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature(350 to $550^{\circ}C$). $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSC were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). From the measurement results, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSC were mutually complementary, enhancing highest fill factor and efficiency. Consequently, it was considered that optimum sintering temperature of $\alpha$-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.504-509
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• 2011

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV~6 kV to measure the conduction current for the analysis of ion current.

• Journal of Korean Society of Water and Wastewater
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• v.30 no.6
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• pp.745-753
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• 2016

The objective of this study was to investigate design factors of the electrolysis reactor through the CFD(computational fluid dynamics) simulation technique. Analyses of velocity vector, streamline, chloride ion concentration distribution showed differences in flow characteristics between the plate type electrode and the porous plate type electrode. In case of the porous plate type electrode, chlorine gas bubbles generated from the anode made upward density flow with relatively constant velocity vectors. Electrolysis effect was more expected with the porous plate type electrode from the distribution of chloride ion concentration. The upper part of the electrolysis reactor with the porous plate type electrode had comparatively low chloride concentration because chloride was converted to the chlorine gas formation. Decreasing the size and increasing total area of rectifying holes in the upper part of cathodes, and widening the area of the rectifying holes in the lower part of cathodes could improve the circulation flow and the efficiency of electrolysis reactor.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.25-34
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• 2018

In this paper, we review the latest technical progress and commercialization of stretchable interconnectors, stretchable strain sensors, and stretchable substrates for stretchable electronics. The development of stretchable electronics can pave a way for new applications such as wearable devices, bio-integrated devices, healthcare and monitoring, and soft robotics. The essential components of stretchable electronic devices are stretchable interconnector and stretchable substrate. Stretchable interconnector should have high stretchability and high electrical conductivity as well as stability under severe mechanical deformation. Therefore several nanocomposite-based materials using CNT, graphene, nanowire, and metal flake have been developed. Geometric engineering such as wavy, serpentine, buckled and mesh structure has been well developed. Stretchable substrate should also pose high stretchability and compatibility with stretchable sensing or interconnecting material. We summarize the recent research results of new materials for stretchable interconnector and substrate as well as strain sensors. The Important challenges in development of the stretchable interconnector and substrate are also briefly discussed.

• Journal of Korean Society of Environmental Engineers
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• v.36 no.4
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• pp.295-302
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• 2014

This study demonstrates a double-path CDI as an alternative of advanced wastewater treatment process. While the CDI typically consists of many pairs of electrodes connected in parallel, the new double-path CDI is designed to have series flow path by dividing the module into two stages. The CFD model showed that the double-path had uniform flow distribution with higher velocity and less dead zone compared with the single-path. However, the double-path was predicted to have higher pressure drop(0.7 bar) compared the single-path (0.4 bar). From the unit cell test, the highest TDS removal efficiencies of single- and double-path were up to 88% and 91%, respectively. The rate of increase in pressure drop with an increase of flow rate was higher in double-path than single-path. At 70 mL/min of flow rate, the pressure drop of double-path was 1.67 bar, which was two times higher than single-path. When the electrode spacing was increased from 100 to $200{\mu}m$, the pressure drop of double-path decreased from 1.67 to 0.87 bar, while there was little difference in TDS removal. When proto type double-path CDI was operated using sewage water, TDS, $NH_4{^+}$-N, $NO_3{^-}$-N and $PO_4{^{3-}}$-P removal efficiencies were up to 78%, 50%, 93% and 50%, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.95-95
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• 2018

강재의 방식법 중 도장은 부식을 억제하는데 효과적이고 편리한 방법으로 선박 및 해양 강 구조물의 방식법으로 사용되고 있다. 한편, 강 구조물의 효율적인 유지관리를 위해서는 방식 도장의 도막 열화도를 평가하고 잔존 수명을 예측하여 최적 시기에 보수도장 혹은 재도장하는 것이 필요하다. 일반적으로 선박 및 해양구조물에 적용되는 도막의 방식 성능 평가 방법으로 해수 침지 시험, 염수 분무 시험, 옥외 폭로 시험 등이 있다. 그러나 이러한 시험들은 그 시험 방법에 따라서 정량적인 평가에 한계가 있음은 물론 장기간 소요되는 등 곤란한 문제점이 있다. 그러므로 선박 및 해양구조물을 비롯하여 교량, 각종 강 구조물의 도장 방식에 사용되는 방식용 도료의 성능을 단기간에 적절하게 평가할 수 있는 가속시험법이 제시되며 연구-사용되고 있다. 그 중 도막 방식 성능을 보다 효율적, 비파괴적, 정량적으로 평가할 수 있는 임피던스 분광법(EIS)과 같은 전기화학적 방법은 상대적으로 시험 기간을 크게 단축시킬 수 있고, 대상 방식 도장의 미세한 성능 차이도 분별 가능하다는 장점이 있다[1]. 따라서 본 연구에서는 선박 및 해양구조물 등 가혹한 부식환경에서 강력한 내구성을 가질 수 있도록 다양한 종류의 표면처리 도장 시편을 제작하여 자외선 조사-염수분무-침지환경 등의 열악한 환경조건 하에서 부식-열화 촉진 시험을 실시하였다. 그리고 그 촉진 열화 과정에서 도막의 외관 상태를 관찰 분석함은 물론 전기화학적 임피던스 분광법을 병행 측정하며 그 표면막의 부식 및 도막 열화도를 비교-종합 평가하였다.본 연구에 사용된 시편은 Al 및 Zn 도금 강판에 에폭시, 에폭시-실리콘 우레탄, 에폭시-우레탄 도장 시편으로 Scribe, No Scribe 및 비교재 Al 및 Zn 도금 시편으로 분류하여 각각 실험을 진행하였다. 즉, 도막 열화 시험은 복합 노화 시험법으로 UV 조사 36 시간(ASTM G53), 염수분무 32 시간(ISO 7253), 수분 응축 10 시간을 1 Cycle로 100 Cycle(7800 시간) 동안 실험을 진행하였다. 이때 도막 열화도 평가는 전기화학적 임피던스 분광법을 이용하여 각 실험 조건별로 주파수에 따른 임피던스(Z) 값을 평가하였다. 즉, 상온 $25^{\circ}C$의 3.5% NaCl 100 ml 수용액에 작동 전극(Working Electrode)과 구리 도선을 통해 연결하였고, 노출 면적은 $1cm^2$로 일정하게 유지 하였으며, 상대 전극(Counter Electrode)은 탄소봉, 기준 전극(Reference Electrode)으로 포화카로멜전극(Saturated Calomel Electrode)을 사용하여 측정하였다. No Scribe 시편의 경우에는 Al 기판 에폭시-실리콘 우레탄 도장 시편이 우수한 도막 저항성을 나타내었으며, 에폭시-우레탄 도장시편은 23사이클 이후의 저항값이 가장 낮게 나타났다. Zn 기판의 경우는 에폭시, 에폭시-실리콘 우레탄, 에폭시-우레탄 도장 시편 모두 저항 값이 유사하였으며, Al 및 Zn 도금 시편은 도장 처리된 시편에 비해 훨씬 낮은 저항 값을 보였다. 또한 Scribe 시편의 경우에는 Al 기판 에폭시-실리콘 우레탄 도장 시편에서 높은 초기 저항 값을 보였으며, 23 사이클 후의 저항 값은 세 종류의 도막에서 약 1~0.1 Gohm 으로 나타났다. 그리고 Zn 기판 에폭시-실리콘 우레탄 도장 시편에서 가장 낮은 도막 저항 값이 나타났다. 이상의 실험을 통해서 본 연구 내용은 실내촉진시험으로 선박 및 해양 강 구조물에 사용되는 다양한 종류의 도막의 열화도를 평가하는 기초 설계 지침으로 응용될 수 있을 것으로 사료된다. 한편, 도막은 노출 환경에 따라 방식 성능이 다르므로 실제 도막의 사용환경을 고려하여 도장 사양별 적용 부위에 따른 적정 가속 실험 방법을 선정할 필요가 있다고 사료된다.

• Composites Research
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• v.28 no.4
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• pp.155-161
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• 2015

A composite structure was fabricated with embedded impact detection capabilities for applications in Structural Health Monitoring (SHM). By embedding sensor functionality in the composite, the structure can successfully perform impact localization in real time. Smart resin, composed of $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,\;Ti)O_2$ (PNN-PZT) powder and epoxy resin with 1:30 wt%, was used instead of conventional epoxy resin in order to activate the sensor function in the composite structure. The embedded impact sensor in the composite was fabricated using Hand Lay-up and Vacuum Assisted Resin Transfer Molding(VARTM) methods to inject the smart resin into the glass-fiber fabric. The electrodes were fabricated using silver paste on both the upper and bottom sides of the specimen, then poling treatment was conducted to activate the sensor function using a high voltage amplifier at 4 kV/mm for 30 min at room temperature. The composite's piezoelectric sensitivity was measured to be 35.13 mV/N by comparing the impact force signals from an impact hammer with the corresponding output voltage from the sensor. Because impact sensor functionality was successfully embedded in the composite structure, various applications of this technique in the SHM industry are anticipated. In particular, impact localization on large-scale composite structures with complex geometries is feasible using this composite embedded impact sensor.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.91-96
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• 2014

Through silicon via (TSV) technology is to form a via hole in a silicon chip, and to stack the chips vertically for three-dimensional (3D) electronics packaging technology. This can reduce current path, power consumption and response time. In this study, Cu-filling substrate size was changed from Si-chip to a 4" wafer to investigate the behavior of Cu filling in wafer level. The electrolyte for Cu filling consisted of $CuSO_4$ $5H_2O$, $H_2SO_4$ and small amount of additives. The anode was Pt, and cathode was changed from $0.5{\times}0.5cm^2$ to 4" wafer. As experimental results, in the case of $5{\times}5cm^2$ Si chip, suitable distance of electrodes was 4cm having 100% filling ratio. The distance of 0~0.5 cm from current supplying location showed 100% filling ratio, and distance of 4.5~5 cm showed 95%. It was confirmed good TSV filling was achieved by plating for 2.5 hrs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.2037-2042
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• 2013

A TCO-less palladium (Pd) catalytic layer on the glass substrate was assessed as the counter electrode (CE) in a dye sensitized solar cell (DSSC) to confirm the stability of Pd with the $I^-/I_3{^-}$electrolyte on the DSSC performance. A 90nm-thick Pd film was deposited by a thermal evaporator. Finally, DSSC devices of $0.45cm^2$ with glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass structure was prepared. We investigated the microstructure and photovoltaic property at 1 and 12 hours after the sample preparation. The optical microscopy, field emission scanning electron microscopy (FESEM), cyclic voltammetry measurement (C-V), and current voltage (I-V) were employed to measure the microstructure and photovoltaic property evolution. Microstructure analysis showed that the corrosion by reaction between the Pd layer and the electrolyte occurred as time went by, which led the decrease of the catalytic activity and the efficiency. I-V result revealed that the energy conversion efficiency after 1 and 12 hours was 0.34% and 0.15%, respectively. Our results implied that we might employ the other non-$I^-/I_3{^-}$electrolyte or the other catalytic metal layers to guarantee the long term stability of the DSSC devices.