• Journal of the Korean Geotechnical Society
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• v.28 no.3
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• pp.45-54
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• 2012

Various geosynthetics are widely applied to civil structures and waste landfill site for reinforcement and water resistance. The use of geosynthetics inevitably involves the coupled behaviors of different materials which include large displacement and strain-softening behaviors, etc. In this study, the effect of chemical element in the leachate on the interface shear strength under the cyclic loading condition was analyzed. The Multi-purpose Interface Apparatus (M-PIA) has been modified and cyclic direct shear tests have been performed. The submerging period of each specimen is 200 days. Additionally, the Field-Emission Scanning Electronic Microscopy (FIB) analysis has been also performed to induce the reason of the variation of disturbance function and verify the hypothesis on the decay-proof ability of geosynthetics. Consequently, the charateristics of chemical degradation of geosynthetic-soil interface are verified and the variation of the disturbance function is mainly caused by the different type of soil mineral decay, based on the FIB results.

• Membrane Journal
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• v.22 no.2
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• pp.128-134
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• 2012

In this study, hydroxy polyimide (HPI) was prepared for non-porous membrane by solvent evaporation method. As the result of gas permeance properties measurement, $CO_2$ permeability was 85 Barrer and the $CO_2/N_2$ selectivity was 23 at $30^{\circ}C$. Flat sheet membrane and hollow fiber membrane were prepared by using ternary system of polymer, solvent and non-solvent additive. Morphologies and gas permeance properties were measured by FE-SEM and bubble flow meter. Each $CO_2$ permeability of 18.28 GPU, 70 GPU and $CO_2/N_2$ selectivity of 6.72, 8.63 at $30^{\circ}C$ in the flat sheet membrane and hollow fiber membrane. Hollow fiber membrane has gas permeance property better than flat sheet membrane.

• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.46-51
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• 2013

In order to monitor in situ electrochemical reaction we prepared the gold microshells on silica microspheres of $2{\mu}m$ in diameter which were able to not only work as electrodes but also surface enhanced Raman scattering (SERS) active substrates. Previously reported gold microshell using polystyrene as core material have a few serious problems, mostly coming from solubility in organic solvent, nonuniform distribution in size and toxicity of the polystyrene. Here we prepared silica core-gold microshell to obtain a strong SERS active platform benefitting from the physicochemical stability, uniformity and non-toxicity of silica. Varying the concentration of 3-aminopropyl triethoxysilane (APTES), the surfaces of silica beads were modified and the optimal condition was determined to be 1% APTES that made the SERS activity of gold microshell strongest. The gold microshells as made were characterized by homemade Micro-Raman system spectrometer, Field-Emission Scanning Electron Microscope.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.414-423
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• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.616-616
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• 2013

그래핀(Graphene)은 열전도도가 높고 전자 이동도(200,000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ionirradiation)등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization)등의 방법으로 그래핀의 전도도를 향상시킬 수 있었다. 그러나 이러한 방법들은 기판의 표면을 거칠게 하며, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막법(Self-assembled monolayers; SAMs)을 이용하여 기판을 기능화한 후 그 위에 그래핀을 전사하면, 자가조립 단층막의 기능기에 따라 그래핀의 일함수를 조절 가능하고 운반자 농도나 도핑 유형을 변화시켜 소자의 전기적 특성을 최적화 할 수 있다 [1-3]. 본 연구에서는 PET(polyethylene terephthalate) 기판에 SAMs를 이용하여 유연하고 투명한 그래핀 전극을 제작하였다. 산소 플라즈마와 3-Aminopropyltriethoxysilane (APTES)를 이용하여 PET 기판 표면 위에 하이드록실 기(Hydroxyl group; -OH)와 아민 기(Amine group; -NH2)를 순차적으로 기능화 하였고, 그 위에 화학적 기상 증착법을 이용하여 합성한 대면적의 균일한 그래핀을 전사하였다. PET 기판 위에 NH2 그룹이 존재하는 것을 접촉각 측정(Contact angle measurement)과 X-선 광전자 분광법(Xray photoelectron spectroscopy: XPS)을 통해 확인하였으며, NH2그룹에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 전류-전압 특성곡선(I-V characteristic curve)을 이용하여 확인하였다. 본 연구 결과는 유연하고 투명한 기판 위에 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.541-546
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• 2006

In this study we have investigated cathodoluminescence (CL) and structural properties of thin film $ZnGa_2O_4:Mn$ oxide phosphor by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence. PL emission peaked at 506 nm was observed from the $ZnGa_2O_4:Mn$ phosphor target and it was attributed to the $^4T_1-^6A_1$ transition in $Mn^{2+}$ ion. The color coordinates of the emission were x = 0.09 and y = 0.67. The $ZnGa_2O_4:Mn$ films showed the excitation spectrum peaked at 294 nm by $Mn^{2+}$ ion absorption. It was found that the higher intensity of CL emission at 505 nm appears to result from the denser and closely-packed structure in $ZnGa_2O_4:Mn$ phosphor films deposited at lower pressures. The CL intensity did not show any systematic dependence on film surface roughness.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.169-174
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• 2011

Nanoscale-biodegradable behaviors of synthesized biphasic calcium phosphates (BCP) powders were characterized using X-ray diffraction (XRD), lattice parameter, and field emission microscopy (FE-SEM). The calcined BCP powders in vitro tested in Hank's balanced salt solution (pH = 7.4, $36.5^{\circ}C$) for 3 weeks. The calculated unit cell parameters for BCP have shown lattice distortion and expansion as irregular changes in the a and c-axis after in vitro.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.333-337
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• 2003

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{－1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.12
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• pp.1171-1176
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• 2012

The selective patterning of a carbon nanotube (CNT) forest on a Si substrate has been performed using a femtosecond laser. The high shock wave generated by the femtosecond laser effectively removed the CNTs without damage to the Si substrate. This process has many advantages because it is performed without chemicals and can be easily applied to large-area patterning. The CNTs grown by plasma-enhanced chemical vapor deposition (PECVD) have a catalyst cap at the end of the nanotube owing to the tip-growth mode mechanism. For the application of an electron emission and biosensor probe, the catalyst cap is usually removed chemically, which damages the surface of the CNT wall. Precise control of the femtosecond laser power and focal position could solve this problem. Furthermore, selective CNT cutting using a femtosecond laser is also possible without any phase change in the CNTs, which is usually observed in the focused ion beam irradiation of CNTs.