• Title/Summary/Keyword: 저항 평균화 기법

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1V 2.56-GS/s 6-bit Flash ADC with Clock Calibration Circuit (클록 보정회로를 가진 1V 2.56-GS/s 6-bit Flash ADC)

  • Kim, Sang-Hun;Lee, Han-Yeol;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.436-439
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    • 2011
  • 본 논문은 클록 보정회로를 가진 1V 2.56-GS/s 6-bit flash analog-to-digital converter (ADC) 제안한다. 제안하는 ADC 구조에서 아날로그 블록은 단일 T/H와 2단의 프리앰프, 그리고 비교기를 사용된다. 2단의 프리앰프와 비교기의 출력에 옵셋의 크기를 줄이기 위하여 저항 평균화 기법을 적용하였다. 디지털 블록은 quasi-gray rom base 구조를 사용한다. 3입력 voting 회로로 flash ADC에서 발생하기 쉬운 bubble error를 제거하였으며, 고속 동작을 위해 단일 클록을 사용하는 TSPC F/F로 구현한다. 제안하는 flash ADC는 클록 듀티 비를 조절할 수 있는 클록 보정회로를 사용한다. 클록 보정 회로는 비교기 클록 듀티 비를 조절하여 리셋 시간과 evaluation 시간의 비율을 최적화함으로 dynamic 특성을 확보한다. 제안한 flash ADC는 1V 90nm의 CMOS 공정에서 설계되었다. Full power bandwidth인 1.2 GHz 입력에 대하여 ADC 성능을 시뮬레이션을 통해 확인하였다. 설계된 flash ADC의 면적과 전력소모는 각각 $800{\times}400\;{\mu}m^2$와 193.02mW 이다.

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A 3.3V 8-bit 500MSPS Nyquist CMOS A/D Converter Based on an Interpolation Architecture (Interpolation 기법을 이용한 3.3V 8-bit 500MSPS Nyquist CMOS A/D Converter의 설계)

  • 김상규;송민규
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.8
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    • pp.67-74
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    • 2004
  • In this paper, a 3.3V 8-bit 500MSPS based on an interpolation architecture CMOS A/D converter is designed. In order to overcome the problems of high speed operation, a novel pre-amplifier, a circuit for the Reference Fluctuation, and an Averaging Resistor are proposed. The proposed Interpolation A/D Converter consists of Track & Hold, four resistive ladders with 256 taps, 128 comparators, and digital blocks. The proposed A/D Converter is based on 0.35um 2-poly 4-metal N-well CMOS technology. The A/D Converter dissipates 440 mW at a 3.3 Volt single power supply and occupies a chip area of 2250um x 3080um.

A 125 MHz CMOS Phase-Locked Loop with 51-phase Output Clock (51-위상 출력 클럭을 가지는 125 MHz CMOS 위상 고정 루프)

  • Lee, Pil-Ho;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.343-345
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    • 2013
  • This paper describes a phase-locked loop (PLL) that generates a 51-phase clock with the operating frequency of 125MHz. To generate 51-phase clock with a frequency of 125 MHz, the proposed PLL uses three voltage controlled oscillators (VCOs) which are connected by resistors. Each VCO consists of 17 delay-cells. An resistor averaging scheme, which makes three VCOs to connect with each other, makes it possible to generates 51-phase clock of the same phase difference. The proposed PLL is designed by using 65 nm CMOS process with a 1.0 V supply. At the operating frequency of 125 MHz, the simulated DNL and peak-to-peak jitter are +0.0016/-0.0020 LSB and 1.07 ps, respectively. The area and power consumption of the implemented PLL are $290{\times}260{\mu}m^2$ and 2.5 mW, respectively.

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1V 1.6-GS/s 6-bit Flash ADC with Clock Calibration Circuit (클록 보정회로를 가진 1V 1.6-GS/s 6-bit Flash ADC)

  • Kim, Sang-Hun;Hong, Sang-Geun;Lee, Han-Yeol;Park, Won-Ki;Lee, Wang-Yong;Lee, Sung-Chul;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.9
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    • pp.1847-1855
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    • 2012
  • A 1V 1.6-GS/s 6-bit flash analog-to-digital converter (ADC) with a clock calibration circuit is proposed. A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation. Two preamplifier-arrays and each comparator composed of two-stage are implemented for the reduction of analog noises and high speed operation. The clock calibration circuit in the proposed flash ADC improves the dynamic performance of the entire flash ADC by optimizing the duty cycle and phase of the clock. It adjusts the reset and evaluation time of the clock for the comparator by controlling the duty cycle of the clock. The proposed 1.6-GS/s 6-bit flash ADC is fabricated in a 1V 90nm 1-poly 9-metal CMOS process. The measured SNDR is 32.8 dB for a 800 MHz analog input signal. The measured DNL and INL are +0.38/-0.37 LSB, +0.64/-0.64 LSB, respectively. The power consumption and chip area are $800{\times}500{\mu}m2$ and 193.02mW.