• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.753-754
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• 2014

본 논문에서는 차량 충돌 예방 장거리 레이더용 고 이득 및 저 잡음 77GHz CMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 2볼트 전원전압 및 77GHz의 주파수에서 동작한다. 이러한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 전체 칩 면적을 줄이기 위해 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 34.33dB의 가장 높은 전압이득과 5.6dB의 가장 낮은 잡음지수 특성을 보였다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.252-256
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• 2001

본 논문에서는 IMT-2000 기지국용 2단 저잡음 증폭기를 설계했다. 잡음지수 특성이 뛰어난 HP사의 PHEMT 소자인 ATF-35143을 사용하였고 능동소자의 바이어스는 $V_{ds}$ 가 3 v $I_{d}$을 30mA로 설정했다. 첫 단은 최소잡음 지수에 중점을 두고 설계했고 둘째 단은 이득에 초점을 맞추어 설계했다. 입출력 정재파 비를 줄이기 위해서 전체증폭기의 앞단과 뒷단에 삽입손실이 0.2dB인 X503 SMT 90도 하이브리드 커플러를 설치 했다. 제작을 위해 기판은 두께 0.76mm이고 비유전율 4.2의 FR-4를 사용했다. 설계된 저잡음 증폭기의 특성은 주파수대역 1.92GHz～1.98GHz에서 잡음지수 0.45dB, 입출력 정재파 비 1.2이하, 이득은 32dB이상의 특성을 보였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.7
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• pp.1191-1198
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• 2001

MMIC low noise amplifiers for millimeter-wave application using 0.15 $\mu$m pHEMT have been presented in this paper. The design emphasis is on active device model and EM simulation. The deficiency of conventional device models is identified. A distributed device model has been adapted to circumvent the scaling problems and, thus, to predict small signal and noise parameters accurately. Two single-ended low noise amplifier are designed using distributed active device model for Q-band(40 ∼ 44 GHz) and V-band(58 ∼65 GHz) application. The Q-band amplifier achieved a average noise figure of 2.2 dB with 18.3 dB average gain. The V-band amplifier achieved a average noise figure of 2.9 dB with 14.7 dB average gain. The design technique and model employed provides good agreement between measured and predicted results. Compared with the published data, this work also represents state-of-the-art performance in terms of gain and noise figure.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.175-178
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• 2000

본 연구에서는 CDMA단말기용 Receiver MMIC를 설계하였다. 전체회로는 저잡음 증폭기, 하향 주파수 혼합기 그리고 중간주파수 증폭기로 구성된다. 또한 문턱전압과 전원전압의 변화에 대해 회로의 안정성을 높이는 바이어스 보상회로를 추가하였다. 설계시 높은 선형성과 저잡음 특성을 가지도록 토폴리기를 구성하였고 설계 결과 전체 이득은 28.5dB, 저잡음 증폭기의 입력IP3는 8dBm, 하향주파수 혼합기의 입력 IP3는 0dBm이며 전체회로의 소모전류는 22.1mA이다. 레이아웃된 전체회로의 크기는 1.4$\times$1.4 [$\textrm{mm}^2$] 이다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.5
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• pp.872-882
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• 1994

In this paper, the Low Noise Amplifier(LNA) is designed and fabricated to include a band pass filter characteristics considering the antenna system characteristics according to the transmitting and receiving signal level of communication satellite transponder. As an example, a 2-stage low noise amplifier and a 4-stage amplifier and designed, fabricated and measured at 14,0~14.5GHz of receiving frequency band. This fabricated LNA has shown the gain with very good flatness within pass-band, and its gain decreases rapidly out of band resulting in supperssion of the transmitting signal power leakage. It has shown the 20.3dB +- 0.1dB of pass-band gain, the 1.44dB +-0.04dB of noise figure and the 14dB rejection out of band(12.25~12.75GHz). The gain flatness, noise figure and group delay of this 2-stage LNA satisfactorily met the simulation results. And the fabricated 4-stage amplifier has shown the more than 42dB of pass-band gain, the +-0.25dB of flatness and the 28dB of the rejection effect for transmitting power leakage. The 2-stage LNA and 4-stage amplifier, in this paper, will bring a design margin for the input filter and also result in the system cost reduction.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2003.11a
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• pp.481-486
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• 2003

RF 전파는 신호레벨이 비교적 작고 간섭 현상에 매우 민감한 특성을 가지고 있다. 따라서 이러한 미소한 입력전파의 수신시 수신기 전체의 감도를 높이고 잡음을 줄일 목적으로 사용되는 고주파 증폭기가 저잡음 증폭기이다. 본 논문에서는 FET 증폭기를 이용한 LNA설계시 직렬 궤환에 의한 최소잡음과 최소입력정재파비의 최적 설계 파라미터를 검증한다. LNA의 기본적 특성 분석과 IMT-2000 구역의 1. 9GHZ대의 휴대단말기용 LNA와 블루투스용 2.4GHz대의 LNA 그리고, 지능형교통시스템에 응용되는 5.8GHz대의 단거리전용통신 LNA를 구현하고 각 주파수별로 특성이 다른 BJT, FET 증폭기를 적용하여 설계하고 성능 분석 및 최적의 파라미터를 도출하였다.

• Journal of Advanced Navigation Technology
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• v.6 no.4
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• pp.312-317
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• 2002

This paper presents a graphical design method for a low noise amplifier using the match circles plotted in the ${\Gamma}_{IN}$ plane on the smith chart. Each circle would be useful for reducing some trial and error efforts resulting from making a trade-off for an optimized performance of a single stage amplifier. A design example is presented to illustrate the design procedure.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.6
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• pp.149-154
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• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.10
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• pp.2045-2051
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• 2009

A 5-GHz band Low Noise Amplifier(LNA) using SOI MOSFET is designed. To improve the noise performance, depletion-type SOI MOSFET is adopted, and it is designed by the two-stage topology consisting of common-source and common-gate stages for low-voltage operation. The fabricated LNA achieved an S11 of less than -10dB, voltage gain of 21dB with a power consumption of 8.3mW at 5.5GHz, and a noise figure of 1.7dB indicated that the depletion-type LNA improved the noise figure by 0.3dB compared with conventional type. These results show the feasibility of a CMOS LNA employing depletion-type SOI MOSFET for low-noise application.

• Journal of the Korea Society of Computer and Information
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• v.5 no.2
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• pp.115-120
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• 2000

This papers describes two low-noise amplifiers that use the Hewlett-Packard ATF-10236 low noise GaAs FET device, The actual measured performance of the amplifiers compares favorably to that predicted by the computer simulation(ADS) the noise figure of the 1575MHz amplifier was measured at 1.78dB which is lower that 2dB as specified. Measurement gam measured 33.0075dB which is within 35dB$\pm$0.5㏈ of the GPS specification. Network Analyzer(HP8510) is used to measure all the s-parameters and Noise Figure meter(HP8970B) is used to measure noise figure. As the result of experiment, gain, input VSWR, output VSWR is within the GPS specification sufficiently.