• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.37 no.5
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• pp.21-30
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• 2000

As a means of getting over the linguistic barrier between different languages, a sign-language communication system using CG animation techniques has been studied. In order to generate a kind of sign-language animation in the system, the joint angles of the arms and the hands corresponding to the gesture have to be determined Up to date, however, the values of joint angles have been decided by trial-and-error methods based on the animator's experiences To overcome the drawback, m this paper, we design an integrated keyframe editor of the arms and the hands for 3D sign-language animation with which we can easily and quickly generate the keyframes of the sign-language animation required to build up In the Implemented keyframe editor, the values of joint angles are calculated by using mverse kinematics, and the same transformation matrix is applied to the joints of two arms and twenty fingers Experimental results show a possibility that the editor could be used efficiently for making up the sign-language communication dictionaries needed for inter-communication between different languages.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.3
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• pp.258-263
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• 2008

Performance of injector equiped with screw type swirler which is suitable for supersonic cruise engine combustor was investigated using theoretical, numerical, and experimental methods. Based on discharge coefficient and spray angle which represent the performance of injectors, the geometrical parameters which affect these performance parameters were defined, control group injectors were designed, and variation of performance parameters according to the geometrical parameters were examined. Within the defined range, measured value of performance of injectors was smaller than result of theoretical prediction, and prediction result from numerical simulation using VOF method agreed with the result of experiments very well. The viscous barrier was not observed, and minimum discharge coefficient and maximum spray angle, 0.05 and 104 respectively, was obtained for this type of injector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.178-178
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• 2008

ZnO 바리스터는 인가되는 전압에 따라 저항이 변하는 전압 의존형 저항체이며 각종 전기 전자 정보통신용 제품에 정전기(ESD) 대책용 소자로 폭 넓게 사용되는 전자 세라믹스 부품이다. 특별히 Bi-based ZnO 바리스터는 다양한 상(phase)으로 구성되어 있으며 그 입계의 전기적 특성은 소량 첨가되는 dopant의 종류에 따라 다양하게 변하는 것으로 알려져 있다. 본 연구에서는 Bi-based ZnO 바리스터 (ZnO-$Bi_2O_3$, ZnO-$Bi_2O_3-Mn_3O_4$)에서 각종 유전함수$(Z^*,M^*,\varepsilon^*,Y^*,tan{\delta})$를 이용하여 입계의 주파수-온도에 대한 특성을 살펴 보았다. 일반적인 ZnO 바리스터 제조법으로 시편을 제작하여 78K~800K 온도 범위에서 각종 유전함수를 이용하여 복소 평면도(complex plane plot)와 주파수 응답도(frequency explicit plot)의 방법으로 defect level과 입계 특성(활성화 에너지, 정전용량, 저항, 입계 안정성 등)에 대하여 고찰하였다. ZnO-$Bi_2O_3$(ZB)계와 ZnO-$Bi_2O_3-Mn_3O_4$(ZBM)계 모두 상온 이하의 온도에서 $Zn_i$와 $V_o$의 결함이 나타났으며, 이들의 결함 준위는 각 유전함수에 따라 다소 차이가 났다. 입계 특성으로 ZB계는 이상구간(560~660K)을 전후로 1.15 eV $\rightarrow$ 1.49 eV의 활성화 에너지의 변화가 나타났지만, ZBM계는 이러한 현상이 나타나지 않았다. 또한 입계 전위 장벽의 온도 안정성에 대해서는 Cole-Cole model을 적용하여 분포 파라미터 (distribution parameter; $\alpha$)를 구하여 고찰하였다. ZB계의 입계 안정성은 온도에 따라 불안정해 졌지만, ZBM계는 안정하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.556-561
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• 2022

Computational material science as an application of Density Functional Theory (DFT) to the discipline of material science has emerged and applied to the research and development of energy materials and electronic materials such as semiconductor. However, there are a few difficulties, such as generating input files for various types of materials in both the same calculating condition and appropriate parameters, which is essential in comparing results of DFT calculation in the right way. In this tutorial status report, we will introduce how to create crystal structures and to prepare input files automatically for the Vienna Ab initio Simulation Package (VASP) and Gaussian, the most popular DFT calculation programs. We anticipate this tutorial makes DFT calculation easier for the ones who are not experts on DFT programs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.7
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• pp.1281-1286
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• 2006

We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

• Journal of Digital Convergence
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• v.15 no.1
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• pp.373-380
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• 2017

We propose the SoMA(System of Making Avatars) based on a commercial 3D game engine. It first decomposes a given character into assemblable pieces, then gives the user them as prefab components so that he or she can reassemble and/or customize them to be plenty of characters. To accomplish this, it implements the character assembly structure as an hierarchy, the upper levels of which are categorized for gross assembly, and the lower levels of which are parameterized for detailed customization. It also defines a hierarchical naming convention for ease of access to the structure. Finally, it provides body, clothes, and attachment systems to make relevant characters.

• Proceedings of the Korea Contents Association Conference
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• 2007.11a
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• pp.522-526
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• 2007

Since newly emerged disease, the Severe Acute Respiratory Syndrome (SARS), spread from Asia to North America and Europe rapidly in 2003, many researchers have tried to determine where the virus came from. In the phylogenetic point of view, SARS virus has been known to be one of the genus Coronavirus, but, the overall conservation of SARS virus sequence was not highly similar to that of known coronaviruses. The natural reservoirs of SARS-CoV are not clearly determined, yet. In the present study, the genomic sequences of SARS-CoV were analyzed by bioinformatics techniques such as multiple sequence alignment and phylogenetic analysis methods as well multivariate statistical analysis. All the calculating processes, including calculations of the relative synonymous codon usage (RSCU) and other genomic parameters using 30,305 coding sequences from the two genera, Coronavirus, and Lentivirus, and one family, Orthomyxoviridae, were performed on SMP cluster in KISTI, Supercomputing Center. As a result, SARS_CoV showed very similar RSCU patterns with feline coronavirus on the both axes of the correspondence analysis, and this result showed more agreeable results with serological results for SARS_CoV than that of phylogenetic result itself. In addition, SARS_CoV, human immunodeficiency virus, and influenza A virus commonly showed the very low RSCU differences among each synonymous codon group, and this low RSCU bias might provide some advantages for them to be transmitted from other species into human beings more successfully. Large-scale genomic analysis using bioinformatics techniques may be useful in genetic epidemiology field effectively.