• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.37-42
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• 2013

The out-of-plane and in-plane angular dependence of ferromagnetic resonance field was measured in NiFe thin films fabricated by magnetron sputtering. The effective magnetization was obtained from the out-of-plane angular dependence of ferromagnetic resonance field, which was well agreed with calculated one. The decrease of effective magnetization with NiFe thickness was due to the surface anisotropy constant of $K_s=-0.23\;erg/cm^2$. The in-plane uniaxial anisotropy fields were obtained from the in-plane angular dependence of ferromagnetic resonance field. The easy axis of in-plane uniaxial anisotropy field was rotated to the reverse direction of applied magnetic field during sample fabrication, which was explained by the antiferromagnetic NiFeO layer at sample surface.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.77-81
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• 2017

The rotatable anisotropy effect was observed in the ferromagnetic resonance measurement in exchange coupled ferromagnetic/antiferromagnetic thin films and it was due to rotation of antiferromagnetic layer by the exchange coupling energy. We analyzed the CoFe thickness dependence of rotatable anisotropy field and ferromagnetic resonance linewidth in exchange coupled $CoFe(t_F)/MnIr(2.5nm)$ thin films. The rotatable anisotropy field was inversely propositional to the CoFe thickness and it was well fitted by the rotatable anisotropy energy of $0.96erg/cm^2$. The ferromagnetic resonance linewidth were linearly propositional to the rotatable anisotropy field in $t_F$ < 50 nm, while it was more dominated by the eddy current effect in $t_F$ > 50 nm.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.301-305
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• 1999

NiFe(60$\AA$)/Co(5$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were patterned into magnetoresistive random access memory (MRAM) cells by a conventional optical lithography process and their output and switching properties were characterized with respect to the cell size and geometry. When 1 mA of constant sense current was applied to the cells, a few or a few tens of mV of output voltage was measured within about 30 Oe of external magnetic field, which is an adequate output property for the commercializing of competitive MRAM devices. In order to resolve the problem of increase in the switching thresholds of magnetic layers with the downsizing of MRAM cells, a new approach using the controlled shape anisotropy was suggested and interpreted by a simple calculation of anisotropy energies of magnetic layers consisting of the cells. This concept gave a reduced switching threshold in NiFe(60$\AA$)/Co(5$\AA$) layer consisting of the patterned cells from about 15 Oe to 5 Oe and it was thought that this concept would be much helpful for the realization of competitive MRAM devices.

• Polymer(Korea)
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• v.26 no.5
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• pp.589-598
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• 2002

thiathlophene (EDiTT) was synthesized. The yield of the synthesis was about 29%. The monomer was identified by using NMR, IR and UV/Vis spectroscopic methods. Poly (3,4-ethylenedithiathiophene) (PEDiTT) was prepared using this monomer and FeCl$_3$. The deep blue green color of the product was changed into brown color by the reduction with $N_2$H$_4$. This was soluble to common organic solvents. Spectroelectrochemistry was used to characterize the PEDiTT. NMP was the best solvent for PEDiTT. PEDiTT/NMP solution was used for making SAM type thin film of the polymer on gold electrode. Electrochemical and IR spectroscopic methods were used to identify the thin film.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.249-254
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• 2006

CoFeNi alloys are some of the most studied soft magnetic materials because of their superial properties over FeNi alloys as write head core materials in HDD and MEMS. We studied the effect of magnetic property according to size and orientation of crystal for electroplated Co-Fe-Ni alleys. In case of heat treated ternary alloy, it affect the change of crystal size and structure. In this study, it intends to improve the magnetic properties of CoFeNi thin film by heat treatment. Minimized coercivity and increased magnetization are due to heat treatment from $300^{\circ}C\;to\;400^{\circ}C$. As a bcc phase formation, it grow to amount of magnetization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.71-71
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• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.556-560
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• 2008

The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.96-99
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• 2001

The formation of soft magnets on paper(SMOP) is proposed for the first time and we have demonstrated it successfully. Iorn was used to form the soft magnet thin film on paper. And Cr layer was used as a buffer layer because the roughness of substrate(paper) is not negligible. The maximum magnetization of Cr/Fe/Cr/Paper(Fe:5000${\AA}$) is about 1000 [emu/cc] and the coercive field is about 80 [Oe.]. It is necessary to reduce the coercivity and to enlarge the magnetization value of SMOP to perform a good soft magnetic characteristics on paper. On, the permalloy material is the proper candidate for its high permeability, low coercivity and high magnetization values.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.1
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• pp.35-38
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• 2002

Ferrite thin film with glass substrate was prepared by ferrite plating method in order to make sunglass which cut off ultraviolet and electromagnetic field. It has single phase of polycrystalline spinel structure and has gloss like as mirror and has hardness without scratch by scraping with nail. The transmittance of ferrite thin film is lowered near 400nm manifestly, which shows that the ferrite thin film was cut off ultraviolet successfully. Therefore, the sunglass with ferrite plating is use of cut of ultraviolet and electromagnetic field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.