• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1050-1055
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• 2001

In this paper we analyze the performance of 2-D PSAM for wireless OFDM systems. We apply the analysis of single-carrier PSAM to the 2-D time-frequency lattice of OFDM. To estimate channel fading, we use interpolation filter which minimizes the average power of error as compensation method and analyze the affects on the system performance of the pilot symbol pattern on the 2-D time-frequency lattice. Finally according to the CP and the Doppler frequency, we analyze the performance of 2-D PSA-16QAM for OFDM systems over frequency selective Rayleigh fading channel model.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.336-340
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• 2001

In this paper we analyze the performance of 2-D PSAM for wireless OFDM systems. We apply the analysis of single-carrier PSAM to the 2-D time-frequency lattice of OFDM. To estimate channel fading, we use interpolation filter which minimizes the average power of error as compensation method and analyze the affects on the system performance of the pilot symbol pattern on the 2-D tine-frequency lattice. Finally according to the CP and the Doppler frequency, we analyze the performance of 2-D PSA-16QAM for OFDM systems over frequency selective Rayleigh fading channel model.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.861-864
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• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.541-546
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• 2008

In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.4
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• pp.335-341
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• 2015

In this study, we analyzed a two-dimensional Stokes flow through a microchannel containing projections with constant spacing attached to each wall. The projections on the top and bottom walls were semi-circular in shape, with in-phase locations. By considering the periodicity and symmetry of the flow, the eigenfunction expansion and least squared error method were applied to determine the stream function and pressure distribution. For some typical radius and spacing values, the streamline patterns and pressure distributions in the flow field are shown, and the shear stress distributions on the boundary walls are plotted. In addition, the average pressure gradients in the microchannel are also calculated and shown with the radius and spacing of the projections. In particular, the results for the case of extremely small gaps between the projections on the top and bottom walls are in good agreement with the lubrication results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2403-2408
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• 2013

This paper has analyzed the change of forward and backward current for channel doping concentration to analyze off-current of double gate(DG) MOSFET. The Gaussian function as channel doping distribution has been used to compare with experimental ones, and the two dimensional analytical potential distribution model derived from Poisson's equation has been used to analyze the off-current. The off-current has been analyzed for the change of projected range and standard projected range of Gaussian function with device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. As a result, this research shows the off-current has greatly influenced on forward and backward current for device parameters, especially for the shape of Gaussian function for channel doping concentration.

• Journal of Power System Engineering
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• v.13 no.4
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• pp.24-30
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• 2009

본 연구에서는 기존에 널리 사용되어져 온 Wavier-Stokes 방정식을 풀이하는 전통적인 CFD 해석에서 벗어나 최근에 그 응용 분야를 넓혀가고 있는 LBM의 해석코드를 개발하고, 이를 이용하여 이차원 채널속에 놓여진 쇄기형 물체 주위의 유동특성을 조사하였다. D2Q9 격자계 및 Bhatnagar-Gross-Krook (LBGK) 모델을 채택하였으며, 수치해석 결과는 기존의 실험결과의 잘 일치하였다. 쇄기형 물체에서 와의 형성 및 방출 Reynolds 수 범위는 $32{\leq}Re{\leq}620$ 이며, 원형실린더에서 알려진 Karman 와열을 형성하는 주기적인 와방출은 대칭적인 와가 형성된 후 $Re{\geq}85$부터 시작되며 Reynolds 수의 증가에 따라 와 방출 주파수는 증가되었다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.6
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• pp.753-760
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• 1999

Experiments were conducted to investigate the effect of the initial turbulent intensity on the flow and heat transfer characteristics for a two-dimensional impinging jet. A square rod was installed at the nozzle exit to increase initial turbulent intensity. A hot wire probe and thermochromic liquid crystal technique were used to measure the turbulent intensity and the surface temperature. All measurements were made over a range of nozzle-to-plate distance from 1 to 10 at Re=20,000. When the rod is not installed, the maximum stagnation point Nusselt number is occurred at H/B=9. A higher initial turbulent intensity enhanced the heat transfer on the surface. A correlation between stagnation point Nusselt number and turbulent intensity are presented.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.758-759
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• 2010

In this study, it was experimentally confirmed that the phenomenon of resonance effect of wave drag in two wavy walls. The channel had saw-tooth type of relief surfaces when supersonic gas flows into this channel. Experiment was carried out on the differential apparatus by conducting the comparative test of two nozzles (round sonic nozzle and two-dimensional nozzle with wavy walls). The two-dimensional nozzle was joined alternately with flat walls which had saw-tooth type of symmetrical and asymmetric reliefs. Two-dimensional nozzle was designed for the M=3 and profiled parabolic contour.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.