• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.768-771
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.8
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• pp.1548-1557
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• 1994

In this paper, the dual mode error correcting adaptive decoding algorithm which is adapted to the continuous phase frequency shift keying(CPFSK) modulation is presented as a technique for overcoming the distortion that reveals from the Rayleigh fading channel. The dual mode adaptive decoder nominally operates as a Viterbi decoder and switches to the burst error correcting mode, whenever the decoder detects an uncorrectable burst error pattern. Under the fading channel environment and when the usable memory quantity is restricted, the dual mode adaptive decoding algorithm shows an advantage in the BER performance over the interleaving technique, and also obtains the merit of not needing the large time delay that the interleaving technique requires. The experimental results from the computer simulation demonstrate the performance of the algorithm and verify the theoretical results.

• Proceedings of the Korea Multimedia Society Conference
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• 2003.05b
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• pp.304-309
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• 2003

오류정정부호는 메모리 시스템 설계, 다양한 디지털 데이터 통신 시스템 설계 등에 널리 이용된다. 특히 오늘날과 같이 통신망의 확대와 컴퓨터의 발전으로 인한 대용량 데이터의 교환과 처리가 요구되는 디지털 데이터 통신 시스템 설계에서는 통신 채널에서 발생하는 오류를 효율적으로 제어하기 위한 오류정정부호 장치가 필수불가결한 요소가 되었다. 본 논문에서는 셀룰라 오토마타의 간단하고, 규칙적이며, 모듈화한 특성을 이용하여 이중 오류정정부호의 효율적인 부호화 및 복호화 방법을 제안한다.

• Proceedings of the Korea Information Processing Society Conference
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• 2004.05a
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• pp.1561-1564
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• 2004

초고속 유무선 통신망이 확대됨에 따라 디지털 데이터 통신 및 저장 시스템 설계 시 통신채널에서 발생하는 오류를 효율적으로 제어하기 위한 오류정정부호 장치가 중요한 요소가 되었다. 본 논문에서는 기존의 셀룰라 오타마타 기반의 오류정정부호를 개선시킨 이중 오류정정부부호를 설계하는 방법을 제안한다.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.58-69
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• 2003

위성 통신의 수요가 증가하고 있고, 무궁화 위성 등 우리 위성이 발사되면서 위성 탑재체의 국내 개발이 꾸준히 진행되고 있다. 위성 탑재체의 채널 성능은 채널 필터와 입출력 멀티플렉서의 주파수 특성에 의해 크게 좌우된다. 이 글에서는 채널 필터와 멀티플렉서의 구성과 설계에서의 고려 사항에 대해 검토하겠다. 채널 필터를 포함하는 멀티플렉서는 전기적 설계뿐만 아니라 기계적, 열적 설계에서도 까다로운 사양을 요구하고 있다. 채널필터는 소형 경량화의 요구에 따라 주로 이중 모드(dual mode) 필터로 설계되고 있고, 최근에는 HTS 필터에 의한 설계도 시도되고 있다. 입력 멀티플렉서는 채널 사이의 간섭을 방지하기 위해 써큘레이터를 이용하여 구성하고, 출력 멀티플렉서는 손실을 최소화하기 위하여 매니폴드(manifold)를 이용하여 채널필터를 결합한다. 이 글은 Kunes와 Kudsia의 논문을 주로 참조하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.858-860
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도에 대한 드레인 유도 장벽 감소 현상에 대하여 분석하고자한다. 드레인 유도 장벽 감소 현상은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑 농도뿐만이 아니라 상하단 산화막 두께, 하단 게이트 전압 등에 대하여 드레인 유도 장벽 감소 현상을 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 채널도핑 농도에 따라 큰 변화를 나타냈다. 단채널 효과 때문에 채널길이가 짧아지면 도핑농도에 따른 영향이 증가하였다. 도핑농도에 대한 드레인유도장벽감소 현상의 변화는 상하단 산화막 두께에 따라 큰 변화를 보였으며 산화막 두께가 증가할수록 도핑농도에 따른 변화가 증가하는 것을 알 수 있었다. 또한 하단게이트 전압은 그 크기에 따라 도핑농도의 영향이 변화하고 있다는 것을 알 수 있었다.