• Proceedings of the Korea Water Resources Association Conference
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• 2015.05a
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• pp.28-28
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• 2015

본 연구는 KICT X밴드 이중편파 레이더 관측자료를 이용하여, 우리나라 기상조건에서 X밴드 이중편파 레이더 $K_{DP}$ 추정 기법에 따른 강우강도 추정의 차이를 비교 검토하였다. 이중편파 레이더로 $K_{DP}$ 기반의 정확도 높은 강우강도 분포 추정에 있어, $K_{DP}$ 추정의 방법에 따라서 추정된 $K_{DP}$의 공간 분포는 상당한 차이를 보이게 된다. 추정 기법만을 볼 때, 이는 주로 ${\Phi}_{DP}$로부터 기울기를 산정하는 방법과 기울기를 산정하는 윈도우의 크기에서 차이가 발생한다. 윈도우의 크기는 일반적으로 호우의 강도에 따라 달리 적용하는 것이 $R-K_{DP}$ 관계에서 보다 정확도가 높은 것으로 알려져 있다. $K_{DP}$ 산정 기법에 따른 차이 검토를 위해 기울기 산정 기법, 필터(FIR) 상수 및 ${\Phi}_{DP}$ 기울기 산정을 위한 윈도우 크기에 따른 강수 추정의 정확도를 검토하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.106-113
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• 2011

In this paper, the non-resonant SWG(Slotted Waveguide) antenna with double slots in narrow wall of rectangular waveguide is designed. Because energy radiated from each slot depends upon inclination angle of slot of the designed antenna, inclination angle of each slot is controlled to satisfy the amplitude distribution for required sidelobe level. Instead of the conventional extraction method of slot conductance, this amplitude distribution is made by the proposed method, which employs far-field radiation pattern calculated by Fourier transform of aperture field distribution on slot. The non-resonant double SWG antenna is designed by the proposed method and is manufactured. The antenna performances are measured and compared with the simulated results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• 한국전기화학회:학술대회논문집
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• 2002.04a
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• pp.41-41
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• 2002

• 한국전기화학회:학술대회논문집
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• 2000.10a
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• pp.43-43
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• 2000

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1998.11a
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• pp.127-130
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• 1998

이 연구에서는 부정류의 판상체 이중공극 프랙탈 모델과 입방체 이중공극 프랙탈 모델의 지하수위 거동을 비교 연구하였다. 균열내 지하수위 거동 해석은 판상 이중공극 프랙탈 모델은 Hmm과 Bidaux(1996)을 이용하였고 입방체 이중공극 프랙탈 모델의 경우에는 입방체블록과 같은 크기의 구상체 블록으로 간주하여 지하수위 거동을 해석하였다. 그리고 0.5, 1, 1.5, 2, 2.5, 3차원에 대해서 판상체 이중공극 프랙탈 모델과 입방체 이중공극 프랙탈 모델의 이론적인 수위강하 곡선을 작성하여 비교, 분석하였다. 부정류의 판상체 이중공극 프랙탈 모델과 입방체 이중공극 프랙탈 모델은 기반암내 균열의 분포가 프랙탈망을 형성하고, 균열과 매트릭스 블록이 거의 수평의 층상으로 발달하는 경우와 균열이 수평방향과 수직방향으로 발달하면서 매트릭스 블록이 입방체를 이루는 경우에 적용될 수 있다.