• Journal of the Korean Data and Information Science Society
• /
• v.20 no.6
• /
• pp.1093-1101
• /
• 2009

Quantile regression has become a more widely used technique to describe the distribution of a response variable given a set of explanatory variables. This paper proposes a novel modelfor quantile regression using doubly penalized kernel machine with support vector machine iteratively reweighted least squares (SVM-IRWLS). To make inference about the shape of a population distribution, the widely popularregression, would be inadequate, if the distribution is not approximately Gaussian. We present a likelihood-based approach to the estimation of the regression quantiles that uses the asymmetric Laplace density.

• Transactions of the Korean Society for Noise and Vibration Engineering
• /
• v.27 no.1
• /
• pp.51-56
• /
• 2017

This paper presents an approach of predicting the radiated noise due to the structural vibration by internal harmonic forces using the doubly asymptotic approximation (DAA). Acoustic transfer vector is derived from the Helmholtz integral equation and the fluid-structure interaction relation of DAA. Numerical results and analytical results of radiated noise for a cylindrical shell were compared and showed that they were consistent in most of frequencies and radiation directions, but showed errors in some radiated directions in the mid-frequency region. Despite these errors, the prediction method will be suitable for practical radiated noise prediction.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.1
• /
• pp.163-168
• /
• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• The Korean Journal of Applied Statistics
• /
• v.22 no.6
• /
• pp.1289-1300
• /
• 2009

The double sampling scheme is effective in reducing the sampling cost. However, the doubly sampled data is contaminated by two types of error, namely false-positive and false-negative errors. These would make the statistical analysis more difficult, and it would require more sophisticate analysis tools. For instance, the Wald method for the interval estimation of a proportion would not work well. In fact, it is well known that the Wald confidence interval behaves very poorly in many sampling schemes. In this note, the property of the Wald interval is investigated in terms of the coverage probability and the expected width. An alternative confidence interval based on the Agresti-Coull's approach is recommended.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.26 no.11
• /
• pp.1623-1629
• /
• 2022

Matrix multiplication is a fundamental operation widely used in science and engineering. There is an approximate matrix multiplication method as a way to reduce the amount of computation of matrix multiplication. Approximate matrix multiplication determines an appropriate probability distribution for selecting columns and rows of matrices, and performs approximate matrix multiplication by selecting columns and rows of matrices according to this distribution. Probability distributions are generated by considering both matrices A and B participating in matrix multiplication. In this paper, we propose a method to generate a probability distribution that selects columns and rows of matrices to be used for approximate matrix multiplication, targeting only matrix A. Approximate matrix multiplication was performed on 1000×1000 ~ 5000×5000 matrices using existing and proposed methods. The approximate matrix multiplication applying the proposed method compared to the conventional method has been shown to be closer to the original matrix multiplication result, averaging 0.02% to 2.34%.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.16 no.1
• /
• pp.57-63
• /
• 1991

In this paper, propagation characteristics of W-type single mode fiber with dual shape core is investigeted theoretically. Design parameters of DSC(dual shape core) W-type single mode fiber with very low dispersion over a wide wavelength range are computed using scalar approximation. The results have larger core radius and stronger confinement for mode field distribution in core than conventional W-type fiber with single shape core.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.7
• /
• pp.1311-1316
• /
• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.5
• /
• pp.992-997
• /
• 2016

This paper analyzes the deviation of tunneling current for the ratio of top and bottom gate oxide thickness of short channel asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current significantly increases if channel length reduces to 5 nm. This short channel effect occurs for asymmetric DGMOSFET having different top and bottom gate oxide structure. The ratio of tunneling current in off current with parameters of channel length and thickness, doping concentration, and top/bottom gate voltages is calculated in this study, and the influence of tunneling current to occur in short channel is investigated. The analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for the ratio of top and bottom gate oxide thickness in short channel asymmetric DGMOSFET, specially according to channel length, channel thickness, doping concentration, and top/bottom gate voltages.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.7
• /
• pp.1617-1622
• /
• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.3
• /
• pp.479-485
• /
• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.